KR970002370A - 반도체 메모리 시험 장치 - Google Patents

반도체 메모리 시험 장치 Download PDF

Info

Publication number
KR970002370A
KR970002370A KR1019960022523A KR19960022523A KR970002370A KR 970002370 A KR970002370 A KR 970002370A KR 1019960022523 A KR1019960022523 A KR 1019960022523A KR 19960022523 A KR19960022523 A KR 19960022523A KR 970002370 A KR970002370 A KR 970002370A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
test device
memory test
semiconductor
test
Prior art date
Application number
KR1019960022523A
Other languages
English (en)
Other versions
KR100203207B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970002370A publication Critical patent/KR970002370A/ko
Application granted granted Critical
Publication of KR100203207B1 publication Critical patent/KR100203207B1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/319Tester hardware, i.e. output processing circuits
    • G01R31/3193Tester hardware, i.e. output processing circuits with comparison between actual response and known fault free response
    • G01R31/31935Storing data, e.g. failure memory
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019960022523A 1995-06-22 1996-06-20 반도체 메모리 시험 장치 KR100203207B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7179464A JPH095402A (ja) 1995-06-22 1995-06-22 半導体メモリ試験装置
JP95-179464 1995-06-22

Publications (2)

Publication Number Publication Date
KR970002370A true KR970002370A (ko) 1997-01-24
KR100203207B1 KR100203207B1 (ko) 1999-06-15

Family

ID=16066316

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960022523A KR100203207B1 (ko) 1995-06-22 1996-06-20 반도체 메모리 시험 장치

Country Status (3)

Country Link
US (1) US5757815A (ko)
JP (1) JPH095402A (ko)
KR (1) KR100203207B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6324657B1 (en) * 1998-06-11 2001-11-27 Micron Technology, Inc. On-clip testing circuit and method for improving testing of integrated circuits
US6442724B1 (en) 1999-04-02 2002-08-27 Teradyne, Inc. Failure capture apparatus and method for automatic test equipment
US6536005B1 (en) 1999-10-26 2003-03-18 Teradyne, Inc. High-speed failure capture apparatus and method for automatic test equipment
US6510398B1 (en) * 2000-06-22 2003-01-21 Intel Corporation Constrained signature-based test
US7096397B2 (en) * 2001-09-17 2006-08-22 Intel Corporation Dft technique for avoiding contention/conflict in logic built-in self-test
US6772381B1 (en) * 2002-01-17 2004-08-03 Advanced Micro Devices, Inc. Programmable logic device verification system and method
US8423840B2 (en) 2008-05-21 2013-04-16 Advantest Corporation Pattern generator
CN110956998B (zh) * 2019-12-02 2022-01-04 江苏芯盛智能科技有限公司 一种存储器测试装置与系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5579251A (en) * 1992-03-31 1996-11-26 Advantest Corporation IC tester
JP2577120Y2 (ja) * 1993-04-15 1998-07-23 株式会社アドバンテスト 過剰パルス印加の禁止回路

Also Published As

Publication number Publication date
US5757815A (en) 1998-05-26
JPH095402A (ja) 1997-01-10
KR100203207B1 (ko) 1999-06-15

Similar Documents

Publication Publication Date Title
DE19680786T1 (de) Halbleiterbauelement-Testgerät
DE69603632D1 (de) Halbleiter-Speicheranordnung
DE69510834T2 (de) Halbleiterspeicheranordnung
DE69615783D1 (de) Halbleiterspeicheranordnung
DE69521159D1 (de) Halbleiterspeicheranordnung
KR970004012A (ko) 반도체장치 및 그 시험장치
DE69422901D1 (de) Halbleiterspeicheranordnung
DE69610457T2 (de) Halbleitervorrichtung
KR970004020A (ko) 반도체장치
KR970005998A (ko) 반도체 장치
DE69600591D1 (de) Halbleiterspeicheranordnung
DE69512700T2 (de) Halbleiterspeicheranordnung
DE69631940D1 (de) Halbleitervorrichtung
KR960012510A (ko) 반도체 메모리 장치
DE19880680T1 (de) Halbleiterbauelement-Testgerät
DE19681689T1 (de) Gesichertes Halbleiterbauelement
KR970002370A (ko) 반도체 메모리 시험 장치
DE69521066D1 (de) Halbleiterspeicheranordnung
KR960011705A (ko) 반도체 메모리 장치
DE69621294T2 (de) Halbleiterspeicheranordnungen
DE69635334D1 (de) Halbleiteranordnung
KR970025773U (ko) 반도체 장치
KR960035523U (ko) 반도체 메모리장치
KR960032606U (ko) 반도체 메모리장치
KR960035522U (ko) 반도체 메모리장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20020302

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee