KR960035522U - 반도체 메모리장치 - Google Patents

반도체 메모리장치

Info

Publication number
KR960035522U
KR960035522U KR2019950008838U KR19950008838U KR960035522U KR 960035522 U KR960035522 U KR 960035522U KR 2019950008838 U KR2019950008838 U KR 2019950008838U KR 19950008838 U KR19950008838 U KR 19950008838U KR 960035522 U KR960035522 U KR 960035522U
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR2019950008838U
Other languages
English (en)
Other versions
KR200177260Y1 (ko
Inventor
배효관
Original Assignee
현대반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 현대반도체주식회사 filed Critical 현대반도체주식회사
Priority to KR2019950008838U priority Critical patent/KR200177260Y1/ko
Publication of KR960035522U publication Critical patent/KR960035522U/ko
Application granted granted Critical
Publication of KR200177260Y1 publication Critical patent/KR200177260Y1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
KR2019950008838U 1995-04-27 1995-04-27 반도체 메모리장치 KR200177260Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019950008838U KR200177260Y1 (ko) 1995-04-27 1995-04-27 반도체 메모리장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950008838U KR200177260Y1 (ko) 1995-04-27 1995-04-27 반도체 메모리장치

Publications (2)

Publication Number Publication Date
KR960035522U true KR960035522U (ko) 1996-11-21
KR200177260Y1 KR200177260Y1 (ko) 2000-05-01

Family

ID=19412228

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950008838U KR200177260Y1 (ko) 1995-04-27 1995-04-27 반도체 메모리장치

Country Status (1)

Country Link
KR (1) KR200177260Y1 (ko)

Also Published As

Publication number Publication date
KR200177260Y1 (ko) 2000-05-01

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