KR970004012A - 반도체장치 및 그 시험장치 - Google Patents

반도체장치 및 그 시험장치 Download PDF

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Publication number
KR970004012A
KR970004012A KR1019960022705A KR19960022705A KR970004012A KR 970004012 A KR970004012 A KR 970004012A KR 1019960022705 A KR1019960022705 A KR 1019960022705A KR 19960022705 A KR19960022705 A KR 19960022705A KR 970004012 A KR970004012 A KR 970004012A
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KR
South Korea
Prior art keywords
test
semiconductor device
semiconductor
test device
Prior art date
Application number
KR1019960022705A
Other languages
English (en)
Other versions
KR100238997B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970004012A publication Critical patent/KR970004012A/ko
Application granted granted Critical
Publication of KR100238997B1 publication Critical patent/KR100238997B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019960022705A 1995-06-23 1996-06-20 반도체장치 및 그 시험장치 KR100238997B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP15737795 1995-06-23
JP95-157377 1995-06-23
JP30957695A JP3862306B2 (ja) 1995-06-23 1995-11-28 半導体装置
JP95-309576 1995-11-28

Publications (2)

Publication Number Publication Date
KR970004012A true KR970004012A (ko) 1997-01-29
KR100238997B1 KR100238997B1 (ko) 2000-01-15

Family

ID=26484851

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960022705A KR100238997B1 (ko) 1995-06-23 1996-06-20 반도체장치 및 그 시험장치

Country Status (4)

Country Link
US (3) US5828258A (ko)
JP (1) JP3862306B2 (ko)
KR (1) KR100238997B1 (ko)
DE (3) DE19620666A1 (ko)

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US6633202B2 (en) * 2001-04-12 2003-10-14 Gennum Corporation Precision low jitter oscillator circuit
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US6573777B2 (en) * 2001-06-29 2003-06-03 Intel Corporation Variable-delay element with an inverter and a digitally adjustable resistor
JP3687576B2 (ja) * 2001-07-11 2005-08-24 日本電気株式会社 Ａｔｍセル／パケットスイッチ及び該スイッチを用いた通信制御方法
US6452430B1 (en) * 2001-08-23 2002-09-17 Media Scope Technologies Corporation Phase-locked loop circuit
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US6774734B2 (en) * 2002-11-27 2004-08-10 International Business Machines Corporation Ring oscillator circuit for EDRAM/DRAM performance monitoring
US6865135B2 (en) * 2003-03-12 2005-03-08 Micron Technology, Inc. Multi-frequency synchronizing clock signal generator
US7336134B1 (en) * 2004-06-25 2008-02-26 Rf Micro Devices, Inc. Digitally controlled oscillator
US7405631B2 (en) * 2004-06-30 2008-07-29 Intel Corporation Oscillating divider topology
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JP2007258981A (ja) * 2006-03-22 2007-10-04 Fujitsu Ltd 電圧制御発振回路
US8095104B2 (en) * 2006-06-30 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device having the same
US7515005B2 (en) * 2006-06-30 2009-04-07 O2Micro International Ltd. Variable frequency multi-phase oscillator
JP5018292B2 (ja) * 2007-07-10 2012-09-05 富士通セミコンダクター株式会社 メモリ装置
US8031011B2 (en) * 2008-06-27 2011-10-04 Altera Corporation Digitally controlled oscillators
US8149038B1 (en) * 2010-03-22 2012-04-03 Altera Corporation Techniques for phase adjustment
US8111107B2 (en) * 2010-07-07 2012-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump control scheme
US8621324B2 (en) * 2010-12-10 2013-12-31 Qualcomm Incorporated Embedded DRAM having low power self-correction capability
US8710930B2 (en) 2012-01-12 2014-04-29 Mediatek Singapore Pte. Ltd. Differential ring oscillator and method for calibrating the differential ring oscillator
US8816732B2 (en) * 2012-06-22 2014-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Capactive load PLL with calibration loop
US9217769B2 (en) 2012-10-09 2015-12-22 International Business Machines Corporation Ring oscillator testing with power sensing resistor
WO2014091088A1 (fr) * 2012-12-11 2014-06-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Circuit de comparaison d'une tension a un seuil et conversion d'energie electrique
US9225322B2 (en) 2013-12-17 2015-12-29 Micron Technology, Inc. Apparatuses and methods for providing clock signals
US9698760B1 (en) * 2014-01-31 2017-07-04 Marvell International Ltd. Continuous-time analog delay device
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Also Published As

Publication number Publication date
DE19620666A1 (de) 1997-01-09
DE19655033B4 (de) 2012-06-06
JP3862306B2 (ja) 2006-12-27
DE19655033B9 (de) 2012-06-14
DE19655034B4 (de) 2012-06-06
US6690241B2 (en) 2004-02-10
US5828258A (en) 1998-10-27
KR100238997B1 (ko) 2000-01-15
US20020021179A1 (en) 2002-02-21
US6054885A (en) 2000-04-25
JPH0969288A (ja) 1997-03-11

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