IT1308856B1 - Circuito di lettura per una memoria non volatile. - Google Patents
Circuito di lettura per una memoria non volatile.Info
- Publication number
- IT1308856B1 IT1308856B1 IT1999TO000943A ITTO990943A IT1308856B1 IT 1308856 B1 IT1308856 B1 IT 1308856B1 IT 1999TO000943 A IT1999TO000943 A IT 1999TO000943A IT TO990943 A ITTO990943 A IT TO990943A IT 1308856 B1 IT1308856 B1 IT 1308856B1
- Authority
- IT
- Italy
- Prior art keywords
- volatile memory
- reading circuit
- reading
- circuit
- volatile
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO000943A IT1308856B1 (it) | 1999-10-29 | 1999-10-29 | Circuito di lettura per una memoria non volatile. |
US09/699,304 US6400607B1 (en) | 1999-10-29 | 2000-10-27 | Reading circuit for a non-volatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT1999TO000943A IT1308856B1 (it) | 1999-10-29 | 1999-10-29 | Circuito di lettura per una memoria non volatile. |
Publications (3)
Publication Number | Publication Date |
---|---|
ITTO990943A0 ITTO990943A0 (it) | 1999-10-29 |
ITTO990943A1 ITTO990943A1 (it) | 2001-04-29 |
IT1308856B1 true IT1308856B1 (it) | 2002-01-11 |
Family
ID=11418184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT1999TO000943A IT1308856B1 (it) | 1999-10-29 | 1999-10-29 | Circuito di lettura per una memoria non volatile. |
Country Status (2)
Country | Link |
---|---|
US (1) | US6400607B1 (it) |
IT (1) | IT1308856B1 (it) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1319037B1 (it) * | 2000-10-27 | 2003-09-23 | St Microelectronics Srl | Circuito di lettura di memorie non volatili |
US6525966B1 (en) * | 2000-12-06 | 2003-02-25 | Advanced Micro Devices, Inc. | Method and apparatus for adjusting on-chip current reference for EEPROM sensing |
JP2002230989A (ja) * | 2001-01-31 | 2002-08-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
DE10113239C1 (de) * | 2001-03-19 | 2002-08-22 | Infineon Technologies Ag | Bewerterschaltung zum Auslesen einer in einer Speicherzelle gespeicherten Information |
US6535428B2 (en) * | 2001-06-14 | 2003-03-18 | Stmicroelectronics S.R.L. | Sensing circuit for memory cells |
US6917544B2 (en) | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7251178B2 (en) * | 2004-09-07 | 2007-07-31 | Infineon Technologies Ag | Current sense amplifier |
US7433253B2 (en) * | 2002-12-20 | 2008-10-07 | Qimonda Ag | Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module |
US6946882B2 (en) * | 2002-12-20 | 2005-09-20 | Infineon Technologies Ag | Current sense amplifier |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US7142464B2 (en) * | 2003-04-29 | 2006-11-28 | Saifun Semiconductors Ltd. | Apparatus and methods for multi-level sensing in a memory array |
ITVA20040021A1 (it) * | 2004-05-04 | 2004-08-04 | St Microelectronics Srl | Amplificatore di sensing per la lettura di una cella di memoria non volatile |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US7242618B2 (en) * | 2004-12-09 | 2007-07-10 | Saifun Semiconductors Ltd. | Method for reading non-volatile memory cells |
US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
JP2007027760A (ja) | 2005-07-18 | 2007-02-01 | Saifun Semiconductors Ltd | 高密度不揮発性メモリアレイ及び製造方法 |
US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
US8116142B2 (en) * | 2005-09-06 | 2012-02-14 | Infineon Technologies Ag | Method and circuit for erasing a non-volatile memory cell |
US20070087503A1 (en) * | 2005-10-17 | 2007-04-19 | Saifun Semiconductors, Ltd. | Improving NROM device characteristics using adjusted gate work function |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US8253452B2 (en) | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7369450B2 (en) | 2006-05-26 | 2008-05-06 | Freescale Semiconductor, Inc. | Nonvolatile memory having latching sense amplifier and method of operation |
US7522463B2 (en) * | 2007-01-12 | 2009-04-21 | Atmel Corporation | Sense amplifier with stages to reduce capacitance mismatch in current mirror load |
US7605644B2 (en) * | 2007-05-03 | 2009-10-20 | Arm Limited | Integrated circuit power-on control and programmable comparator |
US8564470B2 (en) * | 2011-06-14 | 2013-10-22 | Infineon Technologies Ag | Successive approximation analog-to-digital converter |
CN102394109B (zh) * | 2011-09-28 | 2016-08-03 | 上海华虹宏力半导体制造有限公司 | 闪存 |
JP5922935B2 (ja) * | 2012-01-24 | 2016-05-24 | エスアイアイ・セミコンダクタ株式会社 | 不揮発性メモリ装置の読出し回路 |
CN103366804B (zh) * | 2012-03-30 | 2017-10-13 | 硅存储技术公司 | 具有电流注入读出放大器的非易失性存储装置 |
KR101999764B1 (ko) * | 2012-08-24 | 2019-07-12 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
US9437257B2 (en) * | 2012-12-31 | 2016-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Sensing circuit, memory device and data detecting method |
US9460785B2 (en) * | 2014-03-06 | 2016-10-04 | Kabushiki Kaisha Toshiba | Semiconductor storage device |
US10319438B2 (en) * | 2016-08-02 | 2019-06-11 | Stmicroelectronics S.R.L. | Memory with margin current addition and related methods |
US9991000B2 (en) * | 2016-08-02 | 2018-06-05 | Stmicroelectronics S.R.L. | Memory with margin current addition and related methods |
DE102021116145A1 (de) * | 2021-06-22 | 2022-12-22 | Infineon Technologies Ag | Zugriff auf einen Speicher |
US11915733B2 (en) * | 2021-07-23 | 2024-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory devices, circuits and methods of adjusting a sensing current for the memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3160316B2 (ja) * | 1991-07-25 | 2001-04-25 | 株式会社東芝 | 不揮発性半導体記憶装置 |
EP0678874B1 (en) * | 1994-04-19 | 2000-07-26 | STMicroelectronics S.r.l. | Memory array cell reading circuit |
DE69524572T2 (de) * | 1995-04-28 | 2002-08-22 | Stmicroelectronics S.R.L., Agrate Brianza | Leseverstärkerschaltung für Halbleiterspeicheranordnungen |
EP0798740B1 (en) * | 1996-03-29 | 2003-11-12 | STMicroelectronics S.r.l. | Reference system for determining the programmed/non-programmed status of a memory cell, particularly for non-volatile memories |
US6219290B1 (en) * | 1998-10-14 | 2001-04-17 | Macronix International Co., Ltd. | Memory cell sense amplifier |
-
1999
- 1999-10-29 IT IT1999TO000943A patent/IT1308856B1/it active
-
2000
- 2000-10-27 US US09/699,304 patent/US6400607B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITTO990943A1 (it) | 2001-04-29 |
ITTO990943A0 (it) | 1999-10-29 |
US6400607B1 (en) | 2002-06-04 |
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