DE3786819T2 - Nichtflüchtige Halbleiterspeicheranordnung. - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung.

Info

Publication number
DE3786819T2
DE3786819T2 DE87104660T DE3786819T DE3786819T2 DE 3786819 T2 DE3786819 T2 DE 3786819T2 DE 87104660 T DE87104660 T DE 87104660T DE 3786819 T DE3786819 T DE 3786819T DE 3786819 T2 DE3786819 T2 DE 3786819T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87104660T
Other languages
English (en)
Other versions
DE3786819D1 (de
Inventor
Shigeru Atsumi
Sumio Tanaka
Shinji Saito
Nobuaki Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3786819D1 publication Critical patent/DE3786819D1/de
Publication of DE3786819T2 publication Critical patent/DE3786819T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G11C16/225—Preventing erasure, programming or reading when power supply voltages are outside the required ranges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
DE87104660T 1986-03-31 1987-03-30 Nichtflüchtige Halbleiterspeicheranordnung. Expired - Fee Related DE3786819T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61071139A JPS62229600A (ja) 1986-03-31 1986-03-31 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3786819D1 DE3786819D1 (de) 1993-09-09
DE3786819T2 true DE3786819T2 (de) 1993-12-09

Family

ID=13451953

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87104660T Expired - Fee Related DE3786819T2 (de) 1986-03-31 1987-03-30 Nichtflüchtige Halbleiterspeicheranordnung.

Country Status (5)

Country Link
US (1) US4879689A (de)
EP (1) EP0239968B1 (de)
JP (1) JPS62229600A (de)
KR (1) KR900006164B1 (de)
DE (1) DE3786819T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2525775B2 (ja) * 1986-07-04 1996-08-21 株式会社東芝 不揮発性半導体メモリ
FR2635600A1 (fr) * 1988-08-19 1990-02-23 Philips Nv Unite de memoire adressable a circuit de selection d'unite ameliore
JP2601903B2 (ja) * 1989-04-25 1997-04-23 株式会社東芝 半導体記憶装置
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
JPH07105160B2 (ja) * 1989-05-20 1995-11-13 東芝マイクロエレクトロニクス株式会社 半導体記憶装置
US5258954A (en) * 1989-06-30 1993-11-02 Kabushiki Kaisha Toshiba Semiconductor memory including circuitry for driving plural word lines in a test mode
JPH0338067A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 不揮発性半導体メモリ装置
JPH0346188A (ja) * 1989-07-13 1991-02-27 Mitsubishi Electric Corp 半導体記憶回路
EP0432481A3 (en) * 1989-12-14 1992-04-29 Texas Instruments Incorporated Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells
US5134587A (en) * 1990-08-17 1992-07-28 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with automatic test mode exit on chip enable
US5134586A (en) * 1990-08-17 1992-07-28 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with chip enable control from output enable during test mode
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JPH10213002A (ja) * 1996-11-27 1998-08-11 Denso Corp データ処理装置
JP2004071119A (ja) * 2002-08-09 2004-03-04 Renesas Technology Corp 半導体記憶装置
EP1709646B1 (de) * 2004-01-23 2008-06-11 Agere Systems, Inc. Verfahren und vorrichtung zum programmieren eines one-time programmable (otp) speichers
US20060139995A1 (en) * 2004-12-28 2006-06-29 Ali Keshavarzi One time programmable memory
CN102110464B (zh) * 2009-12-26 2015-06-10 上海芯豪微电子有限公司 宽带读写存储器装置
US10923204B2 (en) * 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
WO2013179594A1 (ja) * 2012-05-29 2013-12-05 パナソニック株式会社 半導体記憶装置
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
KR20210121456A (ko) * 2020-03-30 2021-10-08 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4451903A (en) * 1981-09-14 1984-05-29 Seeq Technology, Inc. Method and device for encoding product and programming information in semiconductors
JPS59162699A (ja) * 1983-03-07 1984-09-13 Hitachi Micro Comput Eng Ltd リ−ド・オンリ・メモリ
JPS6059599A (ja) * 1983-09-13 1985-04-05 Nec Corp 不揮発性半導体メモリ
JPS6159693A (ja) * 1984-08-30 1986-03-27 Seiko Epson Corp 半導体記憶装置
JPS61207000A (ja) * 1985-03-08 1986-09-13 Toshiba Corp ワンタイム型読出し専用メモリ
JPS6258500A (ja) * 1985-09-09 1987-03-14 Fujitsu Ltd 半導体記憶装置の試験方法
JPS62143476A (ja) * 1985-12-18 1987-06-26 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0239968B1 (de) 1993-08-04
JPS62229600A (ja) 1987-10-08
JPH0530000B2 (de) 1993-05-06
EP0239968A3 (de) 1991-03-27
EP0239968A2 (de) 1987-10-07
KR900006164B1 (ko) 1990-08-24
US4879689A (en) 1989-11-07
DE3786819D1 (de) 1993-09-09
KR870009397A (ko) 1987-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee