DE3778601D1 - Nichtfluechtige halbleiterspeicheranordnung. - Google Patents

Nichtfluechtige halbleiterspeicheranordnung.

Info

Publication number
DE3778601D1
DE3778601D1 DE8787109877T DE3778601T DE3778601D1 DE 3778601 D1 DE3778601 D1 DE 3778601D1 DE 8787109877 T DE8787109877 T DE 8787109877T DE 3778601 T DE3778601 T DE 3778601T DE 3778601 D1 DE3778601 D1 DE 3778601D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
memory arrangement
arrangement
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787109877T
Other languages
English (en)
Inventor
Hiroto C O Patent Divisi Nakai
Hiroshi C O Patent Di Iwahashi
Masamichi C O Patent Div Asano
Isao Sato
Shigeru Kumagai
Kazuto Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61159742A external-priority patent/JPH073947B2/ja
Priority claimed from JP61159744A external-priority patent/JPS6318592A/ja
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3778601D1 publication Critical patent/DE3778601D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE8787109877T 1986-07-09 1987-07-08 Nichtfluechtige halbleiterspeicheranordnung. Expired - Lifetime DE3778601D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61159742A JPH073947B2 (ja) 1986-07-09 1986-07-09 昇圧回路
JP61159744A JPS6318592A (ja) 1986-07-09 1986-07-09 不揮発性半導体メモリ

Publications (1)

Publication Number Publication Date
DE3778601D1 true DE3778601D1 (de) 1992-06-04

Family

ID=26486451

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787109877T Expired - Lifetime DE3778601D1 (de) 1986-07-09 1987-07-08 Nichtfluechtige halbleiterspeicheranordnung.

Country Status (4)

Country Link
US (1) US4831592A (de)
EP (1) EP0254139B1 (de)
KR (1) KR960002008B1 (de)
DE (1) DE3778601D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814993B2 (ja) * 1989-01-13 1996-02-14 株式会社東芝 半導体記憶装置
JPH02260298A (ja) * 1989-03-31 1990-10-23 Oki Electric Ind Co Ltd 不揮発性多値メモリ装置
JPH03179780A (ja) * 1989-12-07 1991-08-05 Fujitsu Ltd 半導体装置
JP2835215B2 (ja) * 1991-07-25 1998-12-14 株式会社東芝 不揮発性半導体記憶装置
US5255224A (en) * 1991-12-18 1993-10-19 International Business Machines Corporation Boosted drive system for master/local word line memory architecture
US5490107A (en) * 1991-12-27 1996-02-06 Fujitsu Limited Nonvolatile semiconductor memory
JP2003168959A (ja) * 2001-11-30 2003-06-13 Sharp Corp 発振回路、昇圧回路、不揮発性記憶装置、および半導体装置
KR100443643B1 (ko) * 2002-01-11 2004-08-09 삼성전자주식회사 반도체 집적 회로의 리시버 회로
DE112010005970T5 (de) * 2010-11-01 2013-08-29 Hewlett-Packard Development Company, L.P. Ablesen eines Speicherlements unter Zuhilfenahme eines Ringoszillators
US9514812B2 (en) 2013-03-28 2016-12-06 Hewlett Packard Enterprise Development Lp Apparatus and method for reading a storage device with a ring oscillator and a time-to-digital circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4393481A (en) * 1979-08-31 1983-07-12 Xicor, Inc. Nonvolatile static random access memory system
US4263664A (en) * 1979-08-31 1981-04-21 Xicor, Inc. Nonvolatile static random access memory system
JPS57130293A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor boosting circuit
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS5891680A (ja) * 1981-11-26 1983-05-31 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0254139A2 (de) 1988-01-27
US4831592A (en) 1989-05-16
EP0254139A3 (de) 1991-01-09
KR880002182A (ko) 1988-04-29
KR960002008B1 (ko) 1996-02-09
EP0254139B1 (de) 1992-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP T