DE3583669D1 - Nichtfluechtige halbleiterspeicheranordnung. - Google Patents

Nichtfluechtige halbleiterspeicheranordnung.

Info

Publication number
DE3583669D1
DE3583669D1 DE8585116542T DE3583669T DE3583669D1 DE 3583669 D1 DE3583669 D1 DE 3583669D1 DE 8585116542 T DE8585116542 T DE 8585116542T DE 3583669 T DE3583669 T DE 3583669T DE 3583669 D1 DE3583669 D1 DE 3583669D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
memory arrangement
arrangement
volatile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585116542T
Other languages
English (en)
Inventor
Masamichi C O Patent Div Asano
Hiroshi C O Patent Di Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59278408A external-priority patent/JPS61150198A/ja
Priority claimed from JP59278407A external-priority patent/JPS61150197A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3583669D1 publication Critical patent/DE3583669D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
DE8585116542T 1984-12-25 1985-12-24 Nichtfluechtige halbleiterspeicheranordnung. Expired - Lifetime DE3583669D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59278408A JPS61150198A (ja) 1984-12-25 1984-12-25 不揮発性半導体記憶装置
JP59278407A JPS61150197A (ja) 1984-12-25 1984-12-25 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
DE3583669D1 true DE3583669D1 (de) 1991-09-05

Family

ID=26552866

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585116542T Expired - Lifetime DE3583669D1 (de) 1984-12-25 1985-12-24 Nichtfluechtige halbleiterspeicheranordnung.

Country Status (3)

Country Link
US (1) US4805150A (de)
EP (1) EP0187375B1 (de)
DE (1) DE3583669D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6034899A (en) * 1987-06-29 2000-03-07 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5877981A (en) * 1987-06-29 1999-03-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device having a matrix of memory cells
US6545913B2 (en) 1987-06-29 2003-04-08 Kabushiki Kaisha Toshiba Memory cell of nonvolatile semiconductor memory device
US5448517A (en) * 1987-06-29 1995-09-05 Kabushiki Kaisha Toshiba Electrically programmable nonvolatile semiconductor memory device with NAND cell structure
US4851720A (en) * 1988-09-02 1989-07-25 Cypress Semiconductor Corporation Low power sense amplifier for programmable logic device
US5247480A (en) * 1989-05-02 1993-09-21 Kabushiki Kaisha Toshiba Electrically erasable progammable read-only memory with nand cell blocks
US5075890A (en) * 1989-05-02 1991-12-24 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with nand cell
KR940005695B1 (ko) * 1990-12-19 1994-06-22 삼성전자 주식회사 불휘발성 기억소자의 로우 디코더 회로
JP3247402B2 (ja) * 1991-07-25 2002-01-15 株式会社東芝 半導体装置及び不揮発性半導体記憶装置
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement
DE69619972D1 (de) * 1996-06-18 2002-04-25 St Microelectronics Srl Nichtflüchtige Speicheranordnung mit niedriger Versorgungsspannung und Spannungserhöher
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5831677B2 (ja) * 1979-11-26 1983-07-07 富士通株式会社 半導体記億装置
GB2089612B (en) * 1980-12-12 1984-08-30 Tokyo Shibaura Electric Co Nonvolatile semiconductor memory device
JPS57130291A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS57171840A (en) * 1981-04-16 1982-10-22 Toshiba Corp Driving circuit
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
US4627027A (en) * 1982-09-01 1986-12-02 Sanyo Electric Co., Ltd. Analog storing and reproducing apparatus utilizing non-volatile memory elements
JPS59124095A (ja) * 1982-12-29 1984-07-18 Fujitsu Ltd 半導体記憶装置
JPS6052112A (ja) * 1983-08-31 1985-03-25 Toshiba Corp 論理回路
US4686651A (en) * 1984-11-15 1987-08-11 Raytheon Company Power switched read-only memory

Also Published As

Publication number Publication date
EP0187375A3 (en) 1988-04-20
EP0187375B1 (de) 1991-07-31
EP0187375A2 (de) 1986-07-16
US4805150A (en) 1989-02-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)