KR870011620A - 불휘발성 반도체기억장치 - Google Patents

불휘발성 반도체기억장치

Info

Publication number
KR870011620A
KR870011620A KR1019870005003A KR870005003A KR870011620A KR 870011620 A KR870011620 A KR 870011620A KR 1019870005003 A KR1019870005003 A KR 1019870005003A KR 870005003 A KR870005003 A KR 870005003A KR 870011620 A KR870011620 A KR 870011620A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
nonvolatile
semiconductor
Prior art date
Application number
KR1019870005003A
Other languages
English (en)
Other versions
KR910000021B1 (ko
Inventor
스미오 다나카
마사키 사토
신지 사이토
시게루 아츠미
노부아키 오츠카
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61115582A external-priority patent/JPH0715955B2/ja
Priority claimed from JP61168537A external-priority patent/JPH0799772B2/ja
Publication of KR870011620A publication Critical patent/KR870011620A/ko
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Application granted granted Critical
Publication of KR910000021B1 publication Critical patent/KR910000021B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
KR1019870005003A 1986-05-20 1988-02-17 불휘발성 반도체기억장치 KR910000021B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61-115582 1986-05-20
JP61115582A JPH0715955B2 (ja) 1986-05-20 1986-05-20 不揮発性半導体記憶装置
JP61-168537 1986-07-17
JP61168537A JPH0799772B2 (ja) 1986-07-17 1986-07-17 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
KR870011620A true KR870011620A (ko) 1987-12-24
KR910000021B1 KR910000021B1 (ko) 1991-01-19

Family

ID=26454074

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870005003A KR910000021B1 (ko) 1986-05-20 1988-02-17 불휘발성 반도체기억장치

Country Status (2)

Country Link
US (1) US4825271A (ko)
KR (1) KR910000021B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
US5196914A (en) * 1989-03-15 1993-03-23 Sgs-Thomson Microelectronics S.R.L. Table cloth matrix of EPROM memory cells with an asymmetrical fin
US5572054A (en) * 1990-01-22 1996-11-05 Silicon Storage Technology, Inc. Method of operating a single transistor non-volatile electrically alterable semiconductor memory device
US5057447A (en) * 1990-07-09 1991-10-15 Texas Instruments Incorporated Silicide/metal floating gate process
CA2107676C (en) * 1991-04-09 2000-10-31 Ping Wang A single transistor non-volatile electrically alterable semiconductor memory device
KR100423907B1 (ko) * 2001-06-14 2004-03-22 삼성전자주식회사 반도체 장치 및 그 제조방법
JP2004111478A (ja) * 2002-09-13 2004-04-08 Sharp Corp 不揮発性半導体記憶装置およびその製造方法
JP2004342281A (ja) * 2003-05-19 2004-12-02 Sharp Corp 同時読出しおよび書込み機能を有する半導体記憶装置、およびマイクロプロセッサ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5642377A (en) * 1979-09-14 1981-04-20 Fujitsu Ltd Ultraviolet ray erasable type rewritable read-only memory
US4380057A (en) * 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4378628A (en) * 1981-08-27 1983-04-05 Bell Telephone Laboratories, Incorporated Cobalt silicide metallization for semiconductor integrated circuits
OA07237A (en) * 1981-10-29 1984-04-30 Sumitomo Chemical Co Fungicidical N-phenylcarbamates.
JPS58175846A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
GB2129349B (en) * 1982-09-23 1986-01-02 Beaver Machine Tool Sales Limi Plano-milling machine

Also Published As

Publication number Publication date
US4825271A (en) 1989-04-25
KR910000021B1 (ko) 1991-01-19

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