SG64943A1 - Ferroelectric memory device - Google Patents

Ferroelectric memory device

Info

Publication number
SG64943A1
SG64943A1 SG1996010411A SG1996010411A SG64943A1 SG 64943 A1 SG64943 A1 SG 64943A1 SG 1996010411 A SG1996010411 A SG 1996010411A SG 1996010411 A SG1996010411 A SG 1996010411A SG 64943 A1 SG64943 A1 SG 64943A1
Authority
SG
Singapore
Prior art keywords
memory device
ferroelectric memory
ferroelectric
memory
Prior art date
Application number
SG1996010411A
Other languages
English (en)
Inventor
Hiroshige Hirano
Nobuyuki Moriwaki
Tatsumi Sumi
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of SG64943A1 publication Critical patent/SG64943A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
SG1996010411A 1995-08-02 1996-08-02 Ferroelectric memory device SG64943A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19735195 1995-08-02

Publications (1)

Publication Number Publication Date
SG64943A1 true SG64943A1 (en) 1999-05-25

Family

ID=16373046

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996010411A SG64943A1 (en) 1995-08-02 1996-08-02 Ferroelectric memory device

Country Status (5)

Country Link
US (1) US5675530A (de)
EP (2) EP1069573B1 (de)
KR (1) KR100243883B1 (de)
DE (2) DE69627724T2 (de)
SG (1) SG64943A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230435B2 (ja) * 1996-05-17 2001-11-19 日本電気株式会社 半導体記憶装置
US6097624A (en) 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
KR100219519B1 (ko) * 1997-01-10 1999-09-01 윤종용 페로일렉트릭 플로팅 게이트 램을 구비하는 반도체 메모리 디바이스 및 그 제조방법
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
KR100282045B1 (ko) * 1998-08-07 2001-03-02 윤종용 강유전체 커패시터를 구비한 불 휘발성 다이나믹 랜덤 엑세스메모리
DE19952311B4 (de) 1999-10-29 2006-07-13 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen vom 2-Transistor/2-Kondensator-Typ
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
US6906945B2 (en) * 2003-11-18 2005-06-14 Texas Instruments Incorporated Bitline precharge timing scheme to improve signal margin
JP2005190565A (ja) * 2003-12-25 2005-07-14 Seiko Epson Corp 強誘電体メモリ装置、電子機器、及び駆動方法
JP4477629B2 (ja) * 2004-03-24 2010-06-09 富士通マイクロエレクトロニクス株式会社 強誘電体メモリ
KR100673901B1 (ko) * 2005-01-28 2007-01-25 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
KR101064377B1 (ko) 2009-05-28 2011-09-14 한양대학교 산학협력단 다이오드로 구성된 셀을 가지는 비휘발성 메모리
US9361972B1 (en) * 2015-03-20 2016-06-07 Intel Corporation Charge level maintenance in a memory
KR102188490B1 (ko) 2016-08-31 2020-12-09 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리에 액세스하기 위한 장치 및 방법
KR102369776B1 (ko) 2016-08-31 2022-03-03 마이크론 테크놀로지, 인크. 강유전 메모리 셀
KR102233267B1 (ko) * 2016-08-31 2021-03-30 마이크론 테크놀로지, 인크. 강유전체 메모리를 포함하며 강유전체 메모리를 작동하기 위한 장치 및 방법
WO2018044510A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932848A (en) * 1975-01-20 1976-01-13 Intel Corporation Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
CA1340340C (en) * 1987-06-02 1999-01-26 Joseph T. Evans, Jr. Non-volatile memory circuit using ferroelectric capacitor storage element
JPH0713877B2 (ja) * 1988-10-19 1995-02-15 株式会社東芝 半導体メモリ
JP3169599B2 (ja) * 1990-08-03 2001-05-28 株式会社日立製作所 半導体装置、その駆動方法、その読み出し方法
JP3162718B2 (ja) * 1991-12-13 2001-05-08 サイメトリックス，コーポレイション 集積回路メモリー
JP2930168B2 (ja) * 1992-10-09 1999-08-03 シャープ株式会社 強誘電体メモリ装置の駆動方法
KR970000870B1 (ko) * 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 반도체메모리장치
US5430671A (en) * 1993-04-09 1995-07-04 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
JP3278981B2 (ja) * 1993-06-23 2002-04-30 株式会社日立製作所 半導体メモリ

Also Published As

Publication number Publication date
DE69627724T2 (de) 2003-10-23
EP1069573B1 (de) 2003-04-23
EP0757354A3 (de) 1998-11-04
DE69621293D1 (de) 2002-06-27
KR100243883B1 (ko) 2000-02-01
EP1069573A1 (de) 2001-01-17
DE69627724D1 (de) 2003-05-28
DE69621293T2 (de) 2002-12-12
US5675530A (en) 1997-10-07
KR970012696A (ko) 1997-03-29
EP0757354A2 (de) 1997-02-05
EP0757354B1 (de) 2002-05-22

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