DE69826955D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung

Info

Publication number
DE69826955D1
DE69826955D1 DE1998626955 DE69826955T DE69826955D1 DE 69826955 D1 DE69826955 D1 DE 69826955D1 DE 1998626955 DE1998626955 DE 1998626955 DE 69826955 T DE69826955 T DE 69826955T DE 69826955 D1 DE69826955 D1 DE 69826955D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1998626955
Other languages
English (en)
Other versions
DE69826955T2 (de
Inventor
Yoshiji Ohta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69826955D1 publication Critical patent/DE69826955D1/de
Publication of DE69826955T2 publication Critical patent/DE69826955T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE69826955T 1997-10-21 1998-08-19 Nichtflüchtige Halbleiterspeicheranordnung Expired - Fee Related DE69826955T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28892497A JP3492168B2 (ja) 1997-10-21 1997-10-21 不揮発性半導体記憶装置
JP28892497 1997-10-21

Publications (2)

Publication Number Publication Date
DE69826955D1 true DE69826955D1 (de) 2004-11-18
DE69826955T2 DE69826955T2 (de) 2005-12-01

Family

ID=17736572

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69826955T Expired - Fee Related DE69826955T2 (de) 1997-10-21 1998-08-19 Nichtflüchtige Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (1) US6166407A (de)
EP (1) EP0911831B1 (de)
JP (1) JP3492168B2 (de)
KR (1) KR100300166B1 (de)
DE (1) DE69826955T2 (de)
TW (1) TW427000B (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6662263B1 (en) 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
KR100403612B1 (ko) * 2000-11-08 2003-11-01 삼성전자주식회사 비트라인 프리차아지 시간(ｔＲＰ)을 개선하는 메모리 셀어레이 구조를 갖는 반도체 메모리 장치 및 그 개선 방법
US6466476B1 (en) 2001-01-18 2002-10-15 Multi Level Memory Technology Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell
JP3992449B2 (ja) * 2001-03-29 2007-10-17 富士通株式会社 半導体記憶装置
JP2003308691A (ja) 2002-04-11 2003-10-31 Elpida Memory Inc 半導体記憶装置
US6944042B2 (en) * 2002-12-31 2005-09-13 Texas Instruments Incorporated Multiple bit memory cells and methods for reading non-volatile data
JP3898152B2 (ja) * 2003-05-27 2007-03-28 ローム株式会社 演算機能付き記憶装置および演算記憶方法
DE10361718A1 (de) * 2003-08-22 2005-03-17 Hynix Semiconductor Inc., Ichon Vorrichtung und Verfahren zum Steuern von nicht flüchtigem DRAM
US7054201B2 (en) * 2003-12-30 2006-05-30 Hynix Semiconductor Inc. Driving circuit for non-volatile DRAM
US7208407B2 (en) * 2004-06-30 2007-04-24 Micron Technology, Inc. Flash memory cells with reduced distances between cell elements
US7190616B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
US7158410B2 (en) * 2004-08-27 2007-01-02 Micron Technology, Inc. Integrated DRAM-NVRAM multi-level memory
US7813170B2 (en) 2005-11-11 2010-10-12 Kabushiki Kaisha Toshiba Semiconductor memory device capable of memorizing multivalued data
KR100810614B1 (ko) * 2006-08-23 2008-03-06 삼성전자주식회사 디램 셀 모드 및 비휘발성 메모리 셀 모드를 갖는 반도체메모리 소자 및 그 동작방법
US20080083943A1 (en) * 2006-10-10 2008-04-10 Walker Andrew J Dual-gate memory device and optimization of electrical interaction between front and back gates to enable scaling
US7777268B2 (en) * 2006-10-10 2010-08-17 Schiltron Corp. Dual-gate device
US7760548B2 (en) * 2006-11-29 2010-07-20 Yuniarto Widjaja Semiconductor memory having both volatile and non-volatile functionality and method of operating
US9601493B2 (en) 2006-11-29 2017-03-21 Zeno Semiconductor, Inc Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US8547756B2 (en) 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
US9391079B2 (en) 2007-11-29 2016-07-12 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US8514622B2 (en) 2007-11-29 2013-08-20 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US8077536B2 (en) 2008-08-05 2011-12-13 Zeno Semiconductor, Inc. Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle
US8159868B2 (en) * 2008-08-22 2012-04-17 Zeno Semiconductor, Inc. Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating
US8194451B2 (en) 2007-11-29 2012-06-05 Zeno Semiconductor, Inc. Memory cells, memory cell arrays, methods of using and methods of making
US9230651B2 (en) 2012-04-08 2016-01-05 Zeno Semiconductor, Inc. Memory device having electrically floating body transitor
US7847338B2 (en) 2007-10-24 2010-12-07 Yuniarto Widjaja Semiconductor memory having both volatile and non-volatile functionality and method of operating
US8130548B2 (en) * 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Semiconductor memory having electrically floating body transistor
US8130547B2 (en) 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8264875B2 (en) 2010-10-04 2012-09-11 Zeno Semiconducor, Inc. Semiconductor memory device having an electrically floating body transistor
US8174886B2 (en) 2007-11-29 2012-05-08 Zeno Semiconductor, Inc. Semiconductor memory having electrically floating body transistor
US10403361B2 (en) 2007-11-29 2019-09-03 Zeno Semiconductor, Inc. Memory cells, memory cell arrays, methods of using and methods of making
US8014200B2 (en) 2008-04-08 2011-09-06 Zeno Semiconductor, Inc. Semiconductor memory having volatile and multi-bit, non-volatile functionality and methods of operating
USRE47381E1 (en) 2008-09-03 2019-05-07 Zeno Semiconductor, Inc. Forming semiconductor cells with regions of varying conductivity
US11908899B2 (en) 2009-02-20 2024-02-20 Zeno Semiconductor, Inc. MOSFET and memory cell having improved drain current through back bias application
US9153309B2 (en) 2010-02-07 2015-10-06 Zeno Semiconductor Inc. Semiconductor memory device having electrically floating body transistor, semiconductor memory device having both volatile and non-volatile functionality and method or operating
US9922981B2 (en) 2010-03-02 2018-03-20 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
US10461084B2 (en) 2010-03-02 2019-10-29 Zeno Semiconductor, Inc. Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making
US8582359B2 (en) 2010-11-16 2013-11-12 Zeno Semiconductor, Inc. Dual-port semiconductor memory and first-in first-out (FIFO) memory having electrically floating body transistor
US8957458B2 (en) 2011-03-24 2015-02-17 Zeno Semiconductor, Inc. Asymmetric semiconductor memory device having electrically floating body transistor
US9025358B2 (en) 2011-10-13 2015-05-05 Zeno Semiconductor Inc Semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and method of operating
JP6362542B2 (ja) 2012-02-16 2018-07-25 ジーノ セミコンダクター， インコーポレイテッド 第１および第２のトランジスタを備えるメモリセルおよび動作の方法
US9208880B2 (en) 2013-01-14 2015-12-08 Zeno Semiconductor, Inc. Content addressable memory device having electrically floating body transistor
US9029922B2 (en) 2013-03-09 2015-05-12 Zeno Semiconductor, Inc. Memory device comprising electrically floating body transistor
US9275723B2 (en) 2013-04-10 2016-03-01 Zeno Semiconductor, Inc. Scalable floating body memory cell for memory compilers and method of using floating body memories with memory compilers
US9368625B2 (en) 2013-05-01 2016-06-14 Zeno Semiconductor, Inc. NAND string utilizing floating body memory cell
US9281022B2 (en) 2013-07-10 2016-03-08 Zeno Semiconductor, Inc. Systems and methods for reducing standby power in floating body memory devices
US9548119B2 (en) 2014-01-15 2017-01-17 Zeno Semiconductor, Inc Memory device comprising an electrically floating body transistor
US9496053B2 (en) 2014-08-15 2016-11-15 Zeno Semiconductor, Inc. Memory device comprising electrically floating body transistor
KR102529073B1 (ko) 2015-04-29 2023-05-08 제노 세미컨덕터, 인크. 백바이어스를 이용한 드레인 전류가 향상된 트랜지스터 및 메모리 셀
US10553683B2 (en) 2015-04-29 2020-02-04 Zeno Semiconductor, Inc. MOSFET and memory cell having improved drain current through back bias application
US10079301B2 (en) 2016-11-01 2018-09-18 Zeno Semiconductor, Inc. Memory device comprising an electrically floating body transistor and methods of using
CN110092350A (zh) 2018-01-27 2019-08-06 清华大学 利用碳纳米管复合膜转移二维纳米材料的方法
TWI787498B (zh) 2018-04-18 2022-12-21 美商季諾半導體股份有限公司 包括電性浮體電晶體的記憶裝置
CN111243648A (zh) * 2018-11-28 2020-06-05 北京知存科技有限公司 闪存单元、闪存模块以及闪存芯片
US11600663B2 (en) 2019-01-11 2023-03-07 Zeno Semiconductor, Inc. Memory cell and memory array select transistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246099A (ja) * 1989-03-20 1990-10-01 Hitachi Ltd 大規模半導体集積回路装置とその欠陥救済法
JPH03269894A (ja) * 1990-03-19 1991-12-02 Fujitsu Ltd 半導体記憶装置
JP2564046B2 (ja) * 1991-02-13 1996-12-18 株式会社東芝 半導体記憶装置
US5331188A (en) * 1992-02-25 1994-07-19 International Business Machines Corporation Non-volatile DRAM cell
JPH06151780A (ja) * 1992-11-12 1994-05-31 Nippon Precision Circuits Kk 半導体装置
JPH07153286A (ja) * 1993-11-30 1995-06-16 Sony Corp 半導体不揮発性記憶装置
JPH08167285A (ja) * 1994-12-07 1996-06-25 Toshiba Corp 半導体記憶装置
US6006347A (en) * 1997-09-17 1999-12-21 Cypress Semiconductor Corporation Test mode features for synchronous pipelined memories

Also Published As

Publication number Publication date
EP0911831B1 (de) 2004-10-13
KR19990036609A (ko) 1999-05-25
TW427000B (en) 2001-03-21
DE69826955T2 (de) 2005-12-01
EP0911831A2 (de) 1999-04-28
KR100300166B1 (ko) 2001-09-06
EP0911831A3 (de) 1999-10-27
US6166407A (en) 2000-12-26
JPH11126492A (ja) 1999-05-11
JP3492168B2 (ja) 2004-02-03

Similar Documents

Publication Publication Date Title
DE69826955D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69520902D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69936028D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69722133D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69822280D1 (de) Halbleiterspeicher
DE69726698T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69522412D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69835635D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69325152D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69820040D1 (de) Halbleiter-speicher-bauteile
DE69509931D1 (de) Halbleiterspeicheranordnung
DE69521159D1 (de) Halbleiterspeicheranordnung
DE69422901D1 (de) Halbleiterspeicheranordnung
DE69417712D1 (de) Nichtflüchtige Halbleiter-Speichereinrichtung
DE69512700D1 (de) Halbleiterspeicheranordnung
DE69614046D1 (de) Nichtflüchtige Halbleiterspeicher
DE69834540D1 (de) Halbleiterspeicher
DE69617391D1 (de) Halbleiterspeicheranordnung
DE69832683D1 (de) Nichtflüchtiges Halbleiterspeicherbauelement
DE69934853D1 (de) Halbleiterspeicheranordnung
DE60043485D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69731015D1 (de) Halbleiterspeicheranordnung
DE69819961D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69823427D1 (de) Halbleiterspeicheranordnung
DE60016104D1 (de) Nichtflüchtige Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee