DE60043485D1 - Nichtflüchtiger Halbleiterspeicher - Google Patents

Nichtflüchtiger Halbleiterspeicher

Info

Publication number
DE60043485D1
DE60043485D1 DE60043485T DE60043485T DE60043485D1 DE 60043485 D1 DE60043485 D1 DE 60043485D1 DE 60043485 T DE60043485 T DE 60043485T DE 60043485 T DE60043485 T DE 60043485T DE 60043485 D1 DE60043485 D1 DE 60043485D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043485T
Other languages
English (en)
Inventor
Takaaki Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE60043485D1 publication Critical patent/DE60043485D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
    • G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
    • G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
    • G06F21/79—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14—Protection against unauthorised use of memory or access to memory
    • G06F12/1458—Protection against unauthorised use of memory or access to memory by checking the subject access rights
    • G06F12/1466—Key-lock mechanism
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access
DE60043485T 1999-09-17 2000-03-24 Nichtflüchtiger Halbleiterspeicher Expired - Lifetime DE60043485D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26442999A JP3209733B2 (ja) 1999-09-17 1999-09-17 不揮発性半導体記憶装置

Publications (1)

Publication Number Publication Date
DE60043485D1 true DE60043485D1 (de) 2010-01-21

Family

ID=17403071

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043485T Expired - Lifetime DE60043485D1 (de) 1999-09-17 2000-03-24 Nichtflüchtiger Halbleiterspeicher

Country Status (6)

Country Link
US (1) US6226199B1 (de)
EP (1) EP1085521B1 (de)
JP (1) JP3209733B2 (de)
KR (1) KR100617333B1 (de)
DE (1) DE60043485D1 (de)
TW (1) TW536704B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100495420C (zh) 2000-02-21 2009-06-03 特科2000国际有限公司 便携式数据存储装置
JP2002331361A (ja) * 2001-05-01 2002-11-19 Obara Corp 溶接制御装置のメモリ保護方法
JP4240851B2 (ja) * 2001-06-27 2009-03-18 ソニー株式会社 暗証コード識別装置及び暗証コード識別方法
EP1399825B1 (de) 2001-06-28 2006-08-02 Trek 2000 International Ltd Verfahren und einrichtungen zum datentransfer
FR2831315B1 (fr) 2001-10-22 2004-01-30 St Microelectronics Sa Memoire eeprom comprenant des moyens de lecture simultanee de bits speciaux d'un premier et d'un second type
US6483734B1 (en) * 2001-11-26 2002-11-19 Hewlett Packard Company Memory device having memory cells capable of four states
US6996692B2 (en) * 2002-04-17 2006-02-07 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for providing security for the same
TW588243B (en) 2002-07-31 2004-05-21 Trek 2000 Int Ltd System and method for authentication
FR2844090A1 (fr) * 2002-08-27 2004-03-05 St Microelectronics Sa Cellule memoire pour registre non volatile a lecture rapide
US6728137B1 (en) * 2003-04-29 2004-04-27 Ememory Technology Inc. Method for programming and reading a plurality of one-time programmable memory blocks
JP2005149715A (ja) * 2003-11-13 2005-06-09 Samsung Electronics Co Ltd Ｏｔｐブロックが含まれたフラッシュメモリを有するメモリシステム
JP2006031540A (ja) * 2004-07-20 2006-02-02 Matsushita Electric Ind Co Ltd アクセス制御システム
WO2006067729A1 (en) 2004-12-21 2006-06-29 Philips Intellectual Property & Standards Gmbh Integrated circuit with improved device security
JP4256859B2 (ja) * 2005-04-21 2009-04-22 シャープ株式会社 半導体記憶装置
EP1902403A1 (de) 2005-07-01 2008-03-26 Nxp B.V. Integrierte schaltung und verfahren zum sichern des zugriffs auf einen onchip-speicher
KR100773398B1 (ko) * 2005-12-14 2007-11-05 삼성전자주식회사 오티피 셀 어레이를 구비한 상 변화 메모리 장치
JP2008226442A (ja) * 2008-04-17 2008-09-25 Spansion Llc 半導体記憶装置
KR101538741B1 (ko) 2009-10-21 2015-07-22 삼성전자주식회사 보안기능을 갖는 데이터 저장매체와 그 출력장치
KR20110102734A (ko) * 2010-03-11 2011-09-19 삼성전자주식회사 오티피 록 비트 레지스터를 구비한 불휘발성 반도체 메모리 장치
KR101797107B1 (ko) 2011-07-08 2017-12-13 삼성전자주식회사 비휘발성 메모리 장치와 상기 비휘발성 메모리 장치를 포함하는 메모리 시스템

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991019067A1 (en) * 1990-05-15 1991-12-12 Dallas Semiconductor Corporation Electronic key integrated circuit
US5974513A (en) * 1993-11-04 1999-10-26 Hitachi Maxell, Ltd. IC memory card having read/write inhibit capabilities
JP3668514B2 (ja) * 1993-11-04 2005-07-06 日立マクセル株式会社 半導体記憶装置
US5640347A (en) * 1995-10-30 1997-06-17 Myson Technology, Inc. EEPROM circuit configuration having security function
DE19612439C2 (de) * 1996-03-28 2001-02-01 Siemens Ag Halbleiterspeichervorrichtung
JPH11110293A (ja) * 1997-09-29 1999-04-23 Mitsubishi Electric Corp 不揮発性メモリ制御回路

Also Published As

Publication number Publication date
KR100617333B1 (ko) 2006-08-30
JP3209733B2 (ja) 2001-09-17
TW536704B (en) 2003-06-11
EP1085521A1 (de) 2001-03-21
KR20010029573A (ko) 2001-04-06
JP2001084780A (ja) 2001-03-30
EP1085521B1 (de) 2009-12-09
US6226199B1 (en) 2001-05-01

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE