DE60126383D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents
Nichtflüchtige HalbleiterspeicheranordnungInfo
- Publication number
- DE60126383D1 DE60126383D1 DE60126383T DE60126383T DE60126383D1 DE 60126383 D1 DE60126383 D1 DE 60126383D1 DE 60126383 T DE60126383 T DE 60126383T DE 60126383 T DE60126383 T DE 60126383T DE 60126383 D1 DE60126383 D1 DE 60126383D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- volatile semiconductor
- volatile
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/52—Protection of memory contents; Detection of errors in memory contents
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000253194A JP2002074999A (ja) | 2000-08-23 | 2000-08-23 | 不揮発性半導体記憶装置 |
JP2000253194 | 2000-08-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60126383D1 true DE60126383D1 (de) | 2007-03-22 |
DE60126383T2 DE60126383T2 (de) | 2007-10-31 |
Family
ID=18742325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60126383T Expired - Lifetime DE60126383T2 (de) | 2000-08-23 | 2001-08-23 | Nichtflüchtige Halbleiterspeicheranordnung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6483745B2 (de) |
EP (1) | EP1182669B1 (de) |
JP (1) | JP2002074999A (de) |
KR (1) | KR100465122B1 (de) |
DE (1) | DE60126383T2 (de) |
TW (1) | TW522400B (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4260434B2 (ja) | 2002-07-16 | 2009-04-30 | 富士通マイクロエレクトロニクス株式会社 | 不揮発性半導体メモリ及びその動作方法 |
JP2004103089A (ja) * | 2002-09-06 | 2004-04-02 | Sharp Corp | 不揮発性半導体記憶装置およびその再書き込み方法 |
JP3820230B2 (ja) * | 2003-03-07 | 2006-09-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 情報処理装置並びに省電力方法及びプログラム |
EP1473739A1 (de) * | 2003-04-29 | 2004-11-03 | Dialog Semiconductor GmbH | Flash-Speicher mit Datenverlust-Früherkennung |
US7699232B2 (en) | 2004-02-06 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7663473B2 (en) * | 2004-02-12 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, IC card, IC tag, RFID, transponder, bills, securities, passport, electronic apparatus, bag, and clothes |
JP2005321658A (ja) * | 2004-05-10 | 2005-11-17 | International Display Technology Kk | 回路検査方法、液晶表示装置の製造方法および回路検査装置 |
JP2005353110A (ja) * | 2004-06-08 | 2005-12-22 | Nec Electronics Corp | 不揮発性メモリ装置 |
KR100697776B1 (ko) | 2005-06-07 | 2007-03-20 | 주식회사 유니테스트 | 반도체 테스트 장치 |
JP4796360B2 (ja) * | 2005-09-07 | 2011-10-19 | 富士通セミコンダクター株式会社 | 冗長置換方法、半導体記憶装置及び情報処理装置 |
JP2007317170A (ja) * | 2006-04-28 | 2007-12-06 | Renesas Technology Corp | Icモジュールおよび携帯電話 |
US7286409B1 (en) | 2006-05-09 | 2007-10-23 | Macronix International Co., Ltd. | Method and apparatus to improve nonvolatile memory data retention |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7511646B2 (en) | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7701797B2 (en) | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US7551486B2 (en) | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
US7852690B2 (en) | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US7639542B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US7639531B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US7613043B2 (en) | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
US7911834B2 (en) | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
KR100830580B1 (ko) | 2006-10-20 | 2008-05-21 | 삼성전자주식회사 | 플래시 메모리 장치를 포함한 메모리 시스템의 데이터 복원방법 |
US7580302B2 (en) * | 2006-10-23 | 2009-08-25 | Macronix International Co., Ltd. | Parallel threshold voltage margin search for MLC memory application |
JP5145720B2 (ja) | 2007-01-31 | 2013-02-20 | 富士通セミコンダクター株式会社 | チャージロス修復方法及び半導体記憶装置 |
US7663926B2 (en) * | 2007-07-27 | 2010-02-16 | Micron Technology, Inc. | Cell deterioration warning apparatus and method |
US7646643B1 (en) * | 2008-01-07 | 2010-01-12 | Lattice Semiconductor Corporation | Process charging monitor for nonvolatile memory |
US8102713B2 (en) * | 2008-08-04 | 2012-01-24 | Triune Ip Llc | Non-volatile memory monitor |
KR101588293B1 (ko) * | 2009-02-17 | 2016-01-26 | 삼성전자주식회사 | 비휘발성 메모리 장치의 읽기 방법 |
CN101615145B (zh) * | 2009-07-24 | 2011-12-07 | 中兴通讯股份有限公司 | 一种提高存储器数据缓存可靠性的方法和装置 |
US8228753B2 (en) | 2009-07-29 | 2012-07-24 | Stec, Inc. | System and method of maintaining data integrity in a flash storage device |
JP5039193B2 (ja) * | 2010-09-22 | 2012-10-03 | 株式会社東芝 | 半導体記憶装置および制御方法 |
US8649215B2 (en) * | 2010-12-22 | 2014-02-11 | HGST Netherlands B.V. | Data management in flash memory using probability of charge disturbances |
FR2977047B1 (fr) * | 2011-06-22 | 2013-08-16 | Starchip | Procede de gestion de l'endurance de memoires non volatiles. |
US10885583B2 (en) * | 2013-12-19 | 2021-01-05 | Chicago Mercantile Exchange Inc. | Deterministic and efficient message packet management |
US9720769B2 (en) | 2014-12-03 | 2017-08-01 | Sandisk Technologies Llc | Storage parameters for a data storage device |
US9983820B2 (en) | 2016-03-29 | 2018-05-29 | Nxp B.V. | Method for performing data updates |
US10832793B2 (en) * | 2018-08-21 | 2020-11-10 | Micron Technology, Inc. | Defective memory cell detection circuitry including use in automotive control systems |
DE102019203351A1 (de) * | 2019-03-12 | 2020-09-17 | Robert Bosch Gmbh | Verfahren und Vorrichtung zum Betreiben einer nichtflüchtigen Speichereinrichtung |
US11204883B1 (en) * | 2020-06-22 | 2021-12-21 | Seagate Technology Llc | Data storage system with access completion uniformity |
US11640252B2 (en) | 2021-03-18 | 2023-05-02 | Western Digital Technologies, Inc. | Idle-power mitigation circuit |
FR3138536A1 (fr) * | 2022-07-28 | 2024-02-02 | Idemia Identity & Security France | Procédé de gestion d’une mémoire d’un élément sécurisé |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2509297B2 (ja) * | 1987-08-31 | 1996-06-19 | 沖電気工業株式会社 | 自己訂正機能付半導体記憶装置及びマイクロコンピュ―タ |
US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
JP3450456B2 (ja) * | 1994-08-31 | 2003-09-22 | 株式会社東芝 | 半導体記憶装置 |
FR2728380A1 (fr) * | 1994-12-20 | 1996-06-21 | Sgs Thomson Microelectronics | Procede d'ecriture de donnees dans une memoire et memoire electriquement programmable correspondante |
JPH08190796A (ja) | 1995-01-09 | 1996-07-23 | Mitsubishi Denki Semiconductor Software Kk | データリフレッシュ機能を有するフラッシュメモリ及びフラッシュメモリのデータリフレッシュ方法 |
US5835413A (en) * | 1996-12-20 | 1998-11-10 | Intel Corporation | Method for improved data retention in a nonvolatile writeable memory by sensing and reprogramming cell voltage levels |
US6108241A (en) * | 1999-07-01 | 2000-08-22 | Micron Technology, Inc. | Leakage detection in flash memory cell |
-
2000
- 2000-08-23 JP JP2000253194A patent/JP2002074999A/ja active Pending
-
2001
- 2001-08-21 TW TW090120543A patent/TW522400B/zh not_active IP Right Cessation
- 2001-08-23 US US09/938,139 patent/US6483745B2/en not_active Expired - Fee Related
- 2001-08-23 EP EP01307168A patent/EP1182669B1/de not_active Expired - Lifetime
- 2001-08-23 KR KR10-2001-0051106A patent/KR100465122B1/ko not_active IP Right Cessation
- 2001-08-23 DE DE60126383T patent/DE60126383T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100465122B1 (ko) | 2005-01-05 |
US20020024844A1 (en) | 2002-02-28 |
DE60126383T2 (de) | 2007-10-31 |
US6483745B2 (en) | 2002-11-19 |
TW522400B (en) | 2003-03-01 |
JP2002074999A (ja) | 2002-03-15 |
EP1182669A3 (de) | 2003-04-02 |
EP1182669A2 (de) | 2002-02-27 |
EP1182669B1 (de) | 2007-01-31 |
KR20020015981A (ko) | 2002-03-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |