DE60332081D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents
Nichtflüchtige HalbleiterspeicheranordnungInfo
- Publication number
- DE60332081D1 DE60332081D1 DE60332081T DE60332081T DE60332081D1 DE 60332081 D1 DE60332081 D1 DE 60332081D1 DE 60332081 T DE60332081 T DE 60332081T DE 60332081 T DE60332081 T DE 60332081T DE 60332081 D1 DE60332081 D1 DE 60332081D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- volatile semiconductor
- volatile
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002323064A JP2004158119A (ja) | 2002-11-06 | 2002-11-06 | 不揮発性半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60332081D1 true DE60332081D1 (de) | 2010-05-27 |
Family
ID=32171338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60332081T Expired - Lifetime DE60332081D1 (de) | 2002-11-06 | 2003-11-04 | Nichtflüchtige Halbleiterspeicheranordnung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6985376B2 (de) |
EP (1) | EP1420408B1 (de) |
JP (1) | JP2004158119A (de) |
KR (1) | KR100575439B1 (de) |
CN (1) | CN100472647C (de) |
DE (1) | DE60332081D1 (de) |
TW (1) | TWI229865B (de) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4278140B2 (ja) * | 2003-09-03 | 2009-06-10 | シャープ株式会社 | 半導体記憶装置 |
US6962648B2 (en) * | 2003-09-15 | 2005-11-08 | Global Silicon Net Corp. | Back-biased face target sputtering |
US7064970B2 (en) * | 2003-11-04 | 2006-06-20 | Micron Technology, Inc. | Serial transistor-cell array architecture |
DE102005004338B4 (de) * | 2004-02-04 | 2009-04-09 | Samsung Electronics Co., Ltd., Suwon | Phasenänderungs-Speicherbauelement und zugehöriges Programmierverfahren |
DE102004025675B4 (de) * | 2004-05-26 | 2008-02-14 | Qimonda Ag | Integrierter Halbleiterspeicher mit organischem Auswahltransistor |
US7425504B2 (en) * | 2004-10-15 | 2008-09-16 | 4D-S Pty Ltd. | Systems and methods for plasma etching |
US20060081466A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | High uniformity 1-D multiple magnet magnetron source |
US20060081467A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | Systems and methods for magnetron deposition |
US7218570B2 (en) * | 2004-12-17 | 2007-05-15 | Sandisk 3D Llc | Apparatus and method for memory operations using address-dependent conditions |
KR100690914B1 (ko) * | 2005-08-10 | 2007-03-09 | 삼성전자주식회사 | 상변화 메모리 장치 |
US7339814B2 (en) * | 2005-08-24 | 2008-03-04 | Infineon Technologies Ag | Phase change memory array having equalized resistance |
US20070084716A1 (en) * | 2005-10-16 | 2007-04-19 | Makoto Nagashima | Back-biased face target sputtering based high density non-volatile data storage |
US20070084717A1 (en) * | 2005-10-16 | 2007-04-19 | Makoto Nagashima | Back-biased face target sputtering based high density non-volatile caching data storage |
WO2007046145A1 (ja) * | 2005-10-19 | 2007-04-26 | Fujitsu Limited | 不揮発性半導体記憶装置の書き込み方法 |
JP2007234133A (ja) | 2006-03-01 | 2007-09-13 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及び半導体集積回路システム |
US8395199B2 (en) * | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US7932548B2 (en) * | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US8454810B2 (en) * | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US20080011603A1 (en) * | 2006-07-14 | 2008-01-17 | Makoto Nagashima | Ultra high vacuum deposition of PCMO material |
JP4344372B2 (ja) | 2006-08-22 | 2009-10-14 | シャープ株式会社 | 半導体記憶装置及びその駆動方法 |
US8308915B2 (en) | 2006-09-14 | 2012-11-13 | 4D-S Pty Ltd. | Systems and methods for magnetron deposition |
KR100809339B1 (ko) * | 2006-12-20 | 2008-03-05 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법 |
US7692999B2 (en) * | 2006-12-25 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Nonvolatile memory and semiconductor device including nonvolatile memory |
KR100872165B1 (ko) * | 2006-12-28 | 2008-12-09 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
KR100868101B1 (ko) * | 2007-01-08 | 2008-11-11 | 삼성전자주식회사 | 반도체 메모리 장치 |
US7626868B1 (en) * | 2007-05-04 | 2009-12-01 | Flashsilicon, Incorporation | Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM) |
US20080135087A1 (en) * | 2007-05-10 | 2008-06-12 | Rangappan Anikara | Thin solar concentrator |
TWI342022B (en) * | 2007-07-05 | 2011-05-11 | Ind Tech Res Inst | A writing circuit for a phase change memory |
US8189365B2 (en) * | 2007-11-21 | 2012-05-29 | Nec Corporation | Semiconductor device configuration method |
US8358526B2 (en) | 2008-02-28 | 2013-01-22 | Contour Semiconductor, Inc. | Diagonal connection storage array |
EP2107571B1 (de) * | 2008-04-03 | 2012-04-25 | Semiconductor Energy Laboratory Co, Ltd. | Halbleitervorrichtung |
JP2009259316A (ja) * | 2008-04-14 | 2009-11-05 | Toshiba Corp | 半導体記憶装置 |
CN102301426A (zh) * | 2009-02-06 | 2011-12-28 | 松下电器产业株式会社 | 非易失性半导体存储器 |
KR101019895B1 (ko) * | 2009-06-23 | 2011-03-04 | 주식회사 하이닉스반도체 | 반도체 메모리 어레이 및 이를 포함하는 반도체 메모리 소자 |
US8233309B2 (en) | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
EP2363862B1 (de) * | 2010-03-02 | 2016-10-26 | Crocus Technology | Speichervorrichtung auf MRAM-Basis mit gedrehtem Gatter |
JP2011204302A (ja) | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体記憶装置 |
KR101145331B1 (ko) * | 2010-07-15 | 2012-05-14 | 에스케이하이닉스 주식회사 | 저항 메모리 장치 |
US8456930B2 (en) * | 2010-10-07 | 2013-06-04 | Hynix Semiconductor Inc. | Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory array |
US8780612B2 (en) * | 2012-08-22 | 2014-07-15 | SK Hynix Inc. | Resistive memory device and programming method thereof |
US8923040B2 (en) * | 2013-01-30 | 2014-12-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Accommodating balance of bit line and source line resistances in magnetoresistive random access memory |
WO2015182100A1 (ja) * | 2014-05-26 | 2015-12-03 | パナソニックIpマネジメント株式会社 | 半導体記憶装置 |
KR102379705B1 (ko) | 2015-08-20 | 2022-03-28 | 삼성전자주식회사 | 그라운드 스위치를 갖는 메모리 장치 |
KR102028476B1 (ko) * | 2017-11-24 | 2019-10-04 | 광주과학기술원 | 비 휘발성 메모리 |
JP2022095431A (ja) * | 2020-12-16 | 2022-06-28 | ソニーセミコンダクタソリューションズ株式会社 | メモリセルアレイユニット |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4734886A (en) * | 1985-10-22 | 1988-03-29 | Harris Corporation | Auxiliary word line driver for effectively controlling programmability of fusible links |
US5182725A (en) * | 1987-11-20 | 1993-01-26 | Mitsubishi Denki Kabushiki Kaisha | Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor |
IT1242142B (it) * | 1990-09-20 | 1994-02-16 | Texas Instruments Italia Spa | Resistore variabile non volatile, realizzato in circuito integrato, in particolare per la composizione di reti neuronali |
JP3380107B2 (ja) * | 1996-03-22 | 2003-02-24 | シャープ株式会社 | 半導体記憶装置 |
JP3709606B2 (ja) * | 1996-04-16 | 2005-10-26 | 富士通株式会社 | 不揮発性半導体記憶装置及びベリファイ方法 |
US5912839A (en) * | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
US6282145B1 (en) * | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
US6259627B1 (en) * | 2000-01-27 | 2001-07-10 | Multi Level Memory Technology | Read and write operations using constant row line voltage and variable column line load |
JP2002140889A (ja) | 2000-11-01 | 2002-05-17 | Canon Inc | 強磁性体メモリおよびその情報再生方法 |
JP4726169B2 (ja) * | 2001-04-19 | 2011-07-20 | キヤノン株式会社 | 磁気メモリ及びその駆動方法 |
-
2002
- 2002-11-06 JP JP2002323064A patent/JP2004158119A/ja active Pending
-
2003
- 2003-11-04 DE DE60332081T patent/DE60332081D1/de not_active Expired - Lifetime
- 2003-11-04 EP EP03256958A patent/EP1420408B1/de not_active Expired - Fee Related
- 2003-11-06 KR KR1020030078226A patent/KR100575439B1/ko not_active IP Right Cessation
- 2003-11-06 US US10/704,267 patent/US6985376B2/en not_active Expired - Lifetime
- 2003-11-06 CN CNB2003101036360A patent/CN100472647C/zh not_active Expired - Fee Related
- 2003-11-06 TW TW092131065A patent/TWI229865B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1499517A (zh) | 2004-05-26 |
US6985376B2 (en) | 2006-01-10 |
CN100472647C (zh) | 2009-03-25 |
US20040095805A1 (en) | 2004-05-20 |
TWI229865B (en) | 2005-03-21 |
EP1420408A2 (de) | 2004-05-19 |
EP1420408B1 (de) | 2010-04-14 |
TW200414185A (en) | 2004-08-01 |
EP1420408A3 (de) | 2005-04-20 |
KR100575439B1 (ko) | 2006-05-03 |
JP2004158119A (ja) | 2004-06-03 |
KR20040040389A (ko) | 2004-05-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |