DE60317381D1 - Halbleiterspeicher - Google Patents

Halbleiterspeicher

Info

Publication number
DE60317381D1
DE60317381D1 DE60317381T DE60317381T DE60317381D1 DE 60317381 D1 DE60317381 D1 DE 60317381D1 DE 60317381 T DE60317381 T DE 60317381T DE 60317381 T DE60317381 T DE 60317381T DE 60317381 D1 DE60317381 D1 DE 60317381D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60317381T
Other languages
English (en)
Other versions
DE60317381T2 (de
Inventor
Toshikazu Nakamura
Satoshi Eto
Toshiya Miyo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60317381D1 publication Critical patent/DE60317381D1/de
Publication of DE60317381T2 publication Critical patent/DE60317381T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40603—Arbitration, priority and concurrent access to memory cells for read/write or refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2281—Timing of a read operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Storage Device Security (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE60317381T 2002-06-25 2003-02-20 Halbleiterspeicher Expired - Lifetime DE60317381T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002006327 2002-06-25
PCT/JP2002/006327 WO2004001761A1 (ja) 2002-06-25 2002-06-25 半導体メモリ

Publications (2)

Publication Number Publication Date
DE60317381D1 true DE60317381D1 (de) 2007-12-20
DE60317381T2 DE60317381T2 (de) 2008-04-10

Family

ID=29808141

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60315651T Expired - Lifetime DE60315651T2 (de) 2002-06-25 2003-02-20 Halbleiterspeicher
DE60317381T Expired - Lifetime DE60317381T2 (de) 2002-06-25 2003-02-20 Halbleiterspeicher

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE60315651T Expired - Lifetime DE60315651T2 (de) 2002-06-25 2003-02-20 Halbleiterspeicher

Country Status (7)

Country Link
US (2) US7072243B2 (de)
EP (2) EP1669999B1 (de)
JP (1) JP4119427B2 (de)
KR (2) KR100615414B1 (de)
CN (4) CN101452738B (de)
DE (2) DE60315651T2 (de)
WO (2) WO2004001761A1 (de)

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* Cited by examiner, † Cited by third party
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JP2003297080A (ja) * 2002-03-29 2003-10-17 Mitsubishi Electric Corp 半導体記憶装置
US6920524B2 (en) * 2003-02-03 2005-07-19 Micron Technology, Inc. Detection circuit for mixed asynchronous and synchronous memory operation
US7117408B2 (en) * 2003-02-26 2006-10-03 Lsi Logic Corporation Method and system of testing data retention of memory
KR100692529B1 (ko) * 2005-07-01 2007-03-09 삼성전자주식회사 최적화된 딜레이 타임 결정 방법, 장치 및 최적화된 딜레이타임 결정 프로그램이 기록된 컴퓨터로 판독 가능한기록매체
JP4972948B2 (ja) * 2006-02-14 2012-07-11 富士通株式会社 バックボード伝送方法、バックボード伝送装置及び基板ユニット
JP2008165865A (ja) * 2006-12-27 2008-07-17 Fujitsu Ltd 半導体メモリおよび半導体メモリの動作方法
KR101163035B1 (ko) * 2009-09-04 2012-07-09 에스케이하이닉스 주식회사 데이터 라인 구동 회로
KR101046273B1 (ko) * 2010-01-29 2011-07-04 주식회사 하이닉스반도체 반도체 장치
CN102354530B (zh) * 2011-08-25 2014-08-20 西安电子科技大学 用于无源uhfrfid芯片的eeprom读取装置
JP5728370B2 (ja) * 2011-11-21 2015-06-03 株式会社東芝 半導体記憶装置およびその駆動方法
US8539146B2 (en) * 2011-11-28 2013-09-17 International Business Machines Corporation Apparatus for scheduling memory refresh operations including power states
CN102521077B (zh) * 2011-12-01 2013-12-25 广州中大微电子有限公司 一种文件防插拔写入方法及系统
CN104076263B (zh) * 2013-03-28 2017-03-15 致茂电子(苏州)有限公司 半导体自动测试设备的时间量测模块及方法
CN103325422B (zh) * 2013-07-17 2016-03-23 苏州兆芯半导体科技有限公司 Sram时序测试电路及测试方法
KR102254100B1 (ko) * 2015-01-05 2021-05-20 삼성전자주식회사 메모리 장치, 메모리 시스템 및 메모리 장치의 동작 방법
CN106158044B (zh) * 2015-04-17 2019-06-18 中芯国际集成电路制造(上海)有限公司 Sram访问时间的测试电路与测试方法
KR102393426B1 (ko) * 2015-11-10 2022-05-04 에스케이하이닉스 주식회사 반도체장치
CN109656854A (zh) * 2017-10-12 2019-04-19 光宝科技股份有限公司 固态储存装置的重置电路及其重置方法
KR102512897B1 (ko) * 2018-01-11 2023-03-23 에스케이하이닉스 주식회사 반도체 장치와 그를 포함하는 반도체 시스템
CN109741774B (zh) * 2018-11-23 2021-07-02 成都汇蓉国科微系统技术有限公司 一种基于fpga片上ram模拟实现ddr3突发的控制器以及方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63106993A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd 半導体記憶装置
US5301278A (en) * 1988-04-29 1994-04-05 International Business Machines Corporation Flexible dynamic memory controller
JPH10247399A (ja) * 1997-03-03 1998-09-14 Hitachi Ltd 半導体集積回路装置
JP4555416B2 (ja) * 1999-09-22 2010-09-29 富士通セミコンダクター株式会社 半導体集積回路およびその制御方法
US6563746B2 (en) * 1999-11-09 2003-05-13 Fujitsu Limited Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
JP3367519B2 (ja) * 1999-12-03 2003-01-14 日本電気株式会社 半導体記憶装置及びそのテスト方法
TW535161B (en) 1999-12-03 2003-06-01 Nec Electronics Corp Semiconductor memory device and its testing method
JP3376998B2 (ja) 2000-03-08 2003-02-17 日本電気株式会社 半導体記憶装置
JP3376997B2 (ja) 2000-03-13 2003-02-17 日本電気株式会社 ワンショット信号発生回路
US6826104B2 (en) * 2000-03-24 2004-11-30 Kabushiki Kaisha Toshiba Synchronous semiconductor memory
JP2001357670A (ja) * 2000-04-14 2001-12-26 Mitsubishi Electric Corp 半導体記憶装置
JP4216457B2 (ja) 2000-11-30 2009-01-28 富士通マイクロエレクトロニクス株式会社 半導体記憶装置及び半導体装置
KR100367690B1 (ko) * 2000-12-04 2003-01-14 (주)실리콘세븐 디램 셀을 이용한 비동기식 에스램 호환 메모리 장치 및그 구동 방법
JP4749538B2 (ja) * 2000-12-11 2011-08-17 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4743999B2 (ja) * 2001-05-28 2011-08-10 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP3861625B2 (ja) 2001-06-13 2006-12-20 ソニー株式会社 データ転送システム、データ転送装置、記録装置、データ転送方法
JP2003270677A (ja) 2002-03-18 2003-09-25 Fujitsu Ltd シート型表示装置
JP4246971B2 (ja) * 2002-07-15 2009-04-02 富士通マイクロエレクトロニクス株式会社 半導体メモリ
JP4597470B2 (ja) * 2002-07-25 2010-12-15 富士通セミコンダクター株式会社 半導体メモリ

Also Published As

Publication number Publication date
EP1669999B1 (de) 2007-11-07
CN101452738A (zh) 2009-06-10
EP1669999A1 (de) 2006-06-14
KR100615414B1 (ko) 2006-08-25
US7064998B2 (en) 2006-06-20
CN101261877A (zh) 2008-09-10
CN101452738B (zh) 2010-10-13
DE60315651T2 (de) 2007-11-22
EP1517332A4 (de) 2005-09-14
US7072243B2 (en) 2006-07-04
DE60315651D1 (de) 2007-09-27
JPWO2004001762A1 (ja) 2005-10-27
JP4119427B2 (ja) 2008-07-16
US20060023547A1 (en) 2006-02-02
EP1517332B1 (de) 2007-08-15
CN100520962C (zh) 2009-07-29
KR100649068B1 (ko) 2006-11-27
CN101452739B (zh) 2011-01-19
DE60317381T2 (de) 2008-04-10
EP1517332A1 (de) 2005-03-23
CN101452739A (zh) 2009-06-10
CN1662996A (zh) 2005-08-31
WO2004001761A1 (ja) 2003-12-31
KR20060067980A (ko) 2006-06-20
CN101261877B (zh) 2010-07-28
WO2004001762A1 (ja) 2003-12-31
KR20040106389A (ko) 2004-12-17
US20050052941A1 (en) 2005-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE