DE60218009D1 - Halbleiterspeichervorrichtung - Google Patents
HalbleiterspeichervorrichtungInfo
- Publication number
- DE60218009D1 DE60218009D1 DE60218009T DE60218009T DE60218009D1 DE 60218009 D1 DE60218009 D1 DE 60218009D1 DE 60218009 T DE60218009 T DE 60218009T DE 60218009 T DE60218009 T DE 60218009T DE 60218009 D1 DE60218009 D1 DE 60218009D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001314163A JP2003123488A (ja) | 2001-10-11 | 2001-10-11 | 半導体記憶装置 |
JP2001314163 | 2001-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60218009D1 true DE60218009D1 (de) | 2007-03-22 |
DE60218009T2 DE60218009T2 (de) | 2007-10-25 |
Family
ID=19132521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60218009T Expired - Lifetime DE60218009T2 (de) | 2001-10-11 | 2002-10-11 | Halbleiterspeichervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6717852B2 (de) |
EP (1) | EP1308963B1 (de) |
JP (1) | JP2003123488A (de) |
KR (1) | KR100518283B1 (de) |
DE (1) | DE60218009T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100527547B1 (ko) * | 2004-03-06 | 2005-11-09 | 주식회사 하이닉스반도체 | 소자 정보 기록 회로 |
US7283418B2 (en) | 2005-07-26 | 2007-10-16 | Micron Technology, Inc. | Memory device and method having multiple address, data and command buses |
WO2008010258A1 (fr) * | 2006-07-18 | 2008-01-24 | Spansion Llc | Dispositif de stockage non volatil et son procédé de commande d'effacement |
JP2009087028A (ja) * | 2007-09-28 | 2009-04-23 | Toshiba Corp | メモリシステム及びメモリの読出し方法並びにプログラム |
US8291248B2 (en) | 2007-12-21 | 2012-10-16 | Mosaid Technologies Incorporated | Non-volatile semiconductor memory device with power saving feature |
CN101903953B (zh) * | 2007-12-21 | 2013-12-18 | 莫塞德技术公司 | 具有功率节省特性的非易失性半导体存储器设备 |
US20100286343A1 (en) * | 2008-01-08 | 2010-11-11 | Thomas Burghardt | Surfaces containing coupling activator compounds and reinforced composites produced therefrom |
KR20110005788A (ko) * | 2008-02-19 | 2011-01-19 | 램버스 인코포레이티드 | 할당 가능 자원을 갖는 멀티-뱅크 플래시 메모리 구조 |
JP5100554B2 (ja) * | 2008-07-30 | 2012-12-19 | 株式会社東芝 | 半導体記憶装置 |
CN101706788B (zh) * | 2009-11-25 | 2012-11-14 | 惠州Tcl移动通信有限公司 | 一种嵌入式文件系统的跨区访问方法 |
JP2012256821A (ja) * | 2010-09-13 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 記憶装置 |
US9779038B2 (en) | 2013-01-31 | 2017-10-03 | Apple Inc. | Efficient suspend-resume operation in memory devices |
US9143070B2 (en) | 2013-08-02 | 2015-09-22 | Hamilton Sundstrand Corporation | Systems and methods for controlling torsional oscillation in wound field synchronous generator machines |
KR101717898B1 (ko) | 2015-09-11 | 2017-03-20 | 홍성무 | 직불(直火)구이의 석쇠장치 |
CN111863095B (zh) * | 2019-04-29 | 2022-07-29 | 北京兆易创新科技股份有限公司 | 一种NOR flash存储器擦除的方法和装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3152535B2 (ja) * | 1993-03-18 | 2001-04-03 | 富士通株式会社 | データ処理装置 |
US5847998A (en) * | 1996-12-20 | 1998-12-08 | Advanced Micro Devices, Inc. | Non-volatile memory array that enables simultaneous read and write operations |
US5867430A (en) * | 1996-12-20 | 1999-02-02 | Advanced Micro Devices Inc | Bank architecture for a non-volatile memory enabling simultaneous reading and writing |
US5841696A (en) | 1997-03-05 | 1998-11-24 | Advanced Micro Devices, Inc. | Non-volatile memory enabling simultaneous reading and writing by time multiplexing a decode path |
TW407234B (en) * | 1997-03-31 | 2000-10-01 | Hitachi Ltd | Semiconductor memory device, non-volatile semiconductor memory device and data reading method thereof |
JP3200034B2 (ja) * | 1998-01-26 | 2001-08-20 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
US6377502B1 (en) | 1999-05-10 | 2002-04-23 | Kabushiki Kaisha Toshiba | Semiconductor device that enables simultaneous read and write/erase operation |
JP4047515B2 (ja) | 1999-05-10 | 2008-02-13 | 株式会社東芝 | 半導体装置 |
US6111787A (en) | 1999-10-19 | 2000-08-29 | Advanced Micro Devices, Inc. | Address transistion detect timing architecture for a simultaneous operation flash memory device |
US6240040B1 (en) * | 2000-03-15 | 2001-05-29 | Advanced Micro Devices, Inc. | Multiple bank simultaneous operation for a flash memory |
-
2001
- 2001-10-11 JP JP2001314163A patent/JP2003123488A/ja active Pending
-
2002
- 2002-10-10 US US10/267,693 patent/US6717852B2/en not_active Expired - Lifetime
- 2002-10-10 KR KR10-2002-0061698A patent/KR100518283B1/ko active IP Right Grant
- 2002-10-11 DE DE60218009T patent/DE60218009T2/de not_active Expired - Lifetime
- 2002-10-11 EP EP02022947A patent/EP1308963B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100518283B1 (ko) | 2005-10-04 |
US6717852B2 (en) | 2004-04-06 |
EP1308963B1 (de) | 2007-02-07 |
US20030072199A1 (en) | 2003-04-17 |
DE60218009T2 (de) | 2007-10-25 |
JP2003123488A (ja) | 2003-04-25 |
KR20030030945A (ko) | 2003-04-18 |
EP1308963A1 (de) | 2003-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |