DE60221466D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung

Info

Publication number
DE60221466D1
DE60221466D1 DE60221466T DE60221466T DE60221466D1 DE 60221466 D1 DE60221466 D1 DE 60221466D1 DE 60221466 T DE60221466 T DE 60221466T DE 60221466 T DE60221466 T DE 60221466T DE 60221466 D1 DE60221466 D1 DE 60221466D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60221466T
Other languages
English (en)
Other versions
DE60221466T2 (de
Inventor
Kazutomo Shioyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE60221466D1 publication Critical patent/DE60221466D1/de
Application granted granted Critical
Publication of DE60221466T2 publication Critical patent/DE60221466T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE60221466T 2001-06-26 2002-06-26 Nichtflüchtige Halbleiterspeicheranordnung Expired - Lifetime DE60221466T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001192711 2001-06-26
JP2001192711A JP3818873B2 (ja) 2001-06-26 2001-06-26 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE60221466D1 true DE60221466D1 (de) 2007-09-13
DE60221466T2 DE60221466T2 (de) 2008-04-17

Family

ID=19031125

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60221466T Expired - Lifetime DE60221466T2 (de) 2001-06-26 2002-06-26 Nichtflüchtige Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (1) US6738292B2 (de)
EP (1) EP1278202B1 (de)
JP (1) JP3818873B2 (de)
KR (1) KR100470888B1 (de)
DE (1) DE60221466T2 (de)
TW (1) TWI270080B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100936790B1 (ko) * 2003-04-29 2010-01-14 주식회사 하이닉스반도체 반도체 메모리 장치
ATE420486T1 (de) 2004-09-14 2009-01-15 Dialog Semiconductor Gmbh Abschaltvorrichtung für ladungspumpeschaltung
JP2006252708A (ja) * 2005-03-11 2006-09-21 Elpida Memory Inc 半導体記憶装置における電圧発生方法及び半導体記憶装置
ITMI20060744A1 (it) * 2006-04-13 2007-10-14 St Microelectronics Srl Regolatore di tensione con switch di scarica a basso rumore per memorie non volatili,in particolare per scaricare word lines da tensioni negative.
US7292495B1 (en) * 2006-06-29 2007-11-06 Freescale Semiconductor, Inc. Integrated circuit having a memory with low voltage read/write operation
KR100809337B1 (ko) 2006-09-06 2008-03-05 삼성전자주식회사 비휘발성 메모리 장치 및 그 구동 방법
US7793172B2 (en) * 2006-09-28 2010-09-07 Freescale Semiconductor, Inc. Controlled reliability in an integrated circuit
US7629831B1 (en) * 2006-10-11 2009-12-08 Altera Corporation Booster circuit with capacitor protection circuitry
US7688656B2 (en) * 2007-10-22 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit memory having dynamically adjustable read margin and method therefor
JP2011118967A (ja) * 2009-12-01 2011-06-16 Toshiba Corp 半導体記憶装置および昇圧回路
CN102497265B (zh) * 2011-11-24 2014-03-12 飞天诚信科技股份有限公司 一种脉冲光信号识别的方法及装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168174A (en) * 1991-07-12 1992-12-01 Texas Instruments Incorporated Negative-voltage charge pump with feedback control
KR100210981B1 (ko) * 1994-06-23 1999-07-15 니시무로 타이죠 지연회로와 발진회로 및 반도체 메모리장치
JP3377148B2 (ja) * 1994-11-30 2003-02-17 旺宏電子股▲ふん▼有限公司 電圧出力装置およびその動作方法
US5818289A (en) * 1996-07-18 1998-10-06 Micron Technology, Inc. Clocking scheme and charge transfer switch for increasing the efficiency of a charge pump or other circuit
US5852576A (en) * 1997-02-28 1998-12-22 Advanced Micro Devices, Inc. High voltage NMOS pass gate for integrated circuit with high voltage generator and flash non-volatile memory device having the pass gate
US5982223A (en) * 1997-06-20 1999-11-09 Integrated Silicon Solution, Inc. Charge pump system with improved programming current distribution
KR100280456B1 (ko) * 1998-03-27 2001-02-01 김영환 반도체 차지 펌프 회로
US6255896B1 (en) * 1999-09-27 2001-07-03 Intel Corporation Method and apparatus for rapid initialization of charge pump circuits
KR20010065157A (ko) * 1999-12-29 2001-07-11 박종섭 플래쉬 메모리 소자의 고전압 발생기
EP1124314B1 (de) * 2000-02-09 2009-01-07 EM Microelectronic-Marin SA Ladungspumpenvorrichtung
US6249458B1 (en) * 2000-06-22 2001-06-19 Xilinx, Inc. Switching circuit for transference of multiple negative voltages
US6366158B1 (en) * 2000-12-27 2002-04-02 Intel Corporation Self initialization for charge pumps
JP2002208290A (ja) * 2001-01-09 2002-07-26 Mitsubishi Electric Corp チャージポンプ回路およびこれを用いた不揮発性メモリの動作方法
JP2002261239A (ja) * 2001-02-28 2002-09-13 Sharp Corp 不揮発性半導体メモリ装置の昇圧回路
US6424570B1 (en) * 2001-06-26 2002-07-23 Advanced Micro Devices, Inc. Modulated charge pump with uses an analog to digital converter to compensate for supply voltage variations

Also Published As

Publication number Publication date
EP1278202B1 (de) 2007-08-01
EP1278202A2 (de) 2003-01-22
US6738292B2 (en) 2004-05-18
JP3818873B2 (ja) 2006-09-06
EP1278202A3 (de) 2004-06-16
US20030012073A1 (en) 2003-01-16
JP2003007075A (ja) 2003-01-10
KR100470888B1 (ko) 2005-03-10
TWI270080B (en) 2007-01-01
KR20030011243A (ko) 2003-02-07
DE60221466T2 (de) 2008-04-17

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