DE60324962D1 - Halbleiterlaseranordnung - Google Patents

Halbleiterlaseranordnung

Info

Publication number
DE60324962D1
DE60324962D1 DE60324962T DE60324962T DE60324962D1 DE 60324962 D1 DE60324962 D1 DE 60324962D1 DE 60324962 T DE60324962 T DE 60324962T DE 60324962 T DE60324962 T DE 60324962T DE 60324962 D1 DE60324962 D1 DE 60324962D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser arrangement
arrangement
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60324962T
Other languages
English (en)
Inventor
Kaori Naganuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60324962D1 publication Critical patent/DE60324962D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE60324962T 2002-12-26 2003-12-26 Halbleiterlaseranordnung Expired - Lifetime DE60324962D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002376591 2002-12-26
JP2003163383 2003-06-09
PCT/JP2003/016946 WO2004077630A1 (ja) 2002-12-26 2003-12-26 半導体レーザアセンブリ

Publications (1)

Publication Number Publication Date
DE60324962D1 true DE60324962D1 (de) 2009-01-08

Family

ID=32929620

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60324962T Expired - Lifetime DE60324962D1 (de) 2002-12-26 2003-12-26 Halbleiterlaseranordnung

Country Status (6)

Country Link
US (1) US7502397B2 (de)
EP (1) EP1577992B1 (de)
JP (1) JP4626517B2 (de)
DE (1) DE60324962D1 (de)
TW (1) TWI258258B (de)
WO (1) WO2004077630A1 (de)

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KR20060115453A (ko) * 2005-05-06 2006-11-09 삼성전자주식회사 방열 구조체 및 이를 구비한 발광소자 조립체
JP4765408B2 (ja) * 2005-05-31 2011-09-07 ソニー株式会社 半導体レーザ装置並びに放熱部材および支持部材
JP4846515B2 (ja) * 2006-10-18 2011-12-28 株式会社東芝 光半導体装置及び光半導体装置の製造方法
CN101897088A (zh) * 2007-12-28 2010-11-24 三菱电机株式会社 激光光源装置
CN101959389B (zh) * 2009-07-13 2014-07-16 富瑞精密组件（昆山）有限公司 散热装置及其制造方法
JP2012119637A (ja) 2010-12-03 2012-06-21 Sumitomo Electric Device Innovations Inc 光半導体装置の製造方法
US8456961B1 (en) 2011-03-22 2013-06-04 Western Digital (Fremont), Llc Systems and methods for mounting and aligning a laser in an electrically assisted magnetic recording assembly
US8518748B1 (en) 2011-06-29 2013-08-27 Western Digital (Fremont), Llc Method and system for providing a laser submount for an energy assisted magnetic recording head
US8288204B1 (en) 2011-08-30 2012-10-16 Western Digital (Fremont), Llc Methods for fabricating components with precise dimension control
US8665677B1 (en) 2011-12-19 2014-03-04 Western Digital (Fremont), Llc Disk drive magnetic read head with affixed and recessed laser device
US8773664B1 (en) 2011-12-20 2014-07-08 Western Digital (Fremont), Llc Method and system for aligning substrates for direct laser coupling in an energy assisted magnetic recording head
US8879593B2 (en) * 2012-03-16 2014-11-04 The United States Of America, As Represented By The Secretary Of The Navy Epitaxial-side-down mounted high-power semiconductor lasers
US9475151B1 (en) 2012-10-30 2016-10-25 Western Digital (Fremont), Llc Method and apparatus for attaching a laser diode and a slider in an energy assisted magnetic recording head
US9431037B2 (en) 2013-03-12 2016-08-30 Western Digitatl (Fremont), LLC Systems and methods for monitoring the power of a light source utilized in energy-assisted magnetic recording
JP5652494B2 (ja) * 2013-03-29 2015-01-14 ウシオ電機株式会社 半導体レーザ装置
US8897102B1 (en) 2013-04-02 2014-11-25 Western Digital (Fremont), Llc Method and system for measuring light delivery offsets in a heat assisted magnetic recording head
US9001628B1 (en) 2013-12-16 2015-04-07 Western Digital (Fremont), Llc Assistant waveguides for evaluating main waveguide coupling efficiency and diode laser alignment tolerances for hard disk
DE102014012855A1 (de) * 2014-09-03 2015-10-01 Jenoptik Laser Gmbh Diodenlaser und Herstellungsverfahren für einen Diodenlaser
US9042048B1 (en) 2014-09-30 2015-05-26 Western Digital (Fremont), Llc Laser-ignited reactive HAMR bonding
US9257138B1 (en) 2014-10-28 2016-02-09 Western Digital (Fremont), Llc Slider assembly and method of manufacturing same
US9902023B1 (en) 2014-10-28 2018-02-27 Western Digital (Fremont), Llc Systems and devices for achieving high throughput attachment and sub-micron alignment of components
JP6439389B2 (ja) * 2014-11-05 2018-12-19 富士電機株式会社 半導体装置
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US9171562B1 (en) 2015-03-19 2015-10-27 Western Digital (Fremont), Llc Patterned metal layer to control solder connection between laser and submount in a magnetic head
CN106848831A (zh) * 2017-04-10 2017-06-13 海信集团有限公司 一种to激光器支架
TWI674375B (zh) * 2019-03-15 2019-10-11 聯鈞光電股份有限公司 發光裝置及其製作方法
JP7478643B2 (ja) 2020-10-22 2024-05-07 新光電気工業株式会社 回路基板

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6018985A (ja) * 1983-07-13 1985-01-31 Hitachi Ltd 発光装置
DE3733849C1 (de) * 1987-10-07 1989-05-11 Franz Arnold Maschinenschraubstock mit Kraftverstaerker
JPH01127275U (de) * 1988-02-24 1989-08-31
JPH0272573U (de) * 1988-11-18 1990-06-01
JPH03217065A (ja) * 1990-01-23 1991-09-24 Toshiba Corp レーザダイオード装置
JP3030442B2 (ja) 1990-08-15 2000-04-10 御芳 中川 遠隔溶射用のアーク溶射装置
JPH0499858U (de) * 1991-02-06 1992-08-28
JPH04352377A (ja) * 1991-05-29 1992-12-07 Mitsubishi Electric Corp 半導体レーザ素子用サブマウント
JPH0811858B2 (ja) * 1991-07-10 1996-02-07 有限会社熱田産業 横編み機における仕掛かり装置
JPH0511470U (ja) * 1991-07-24 1993-02-12 日本航空電子工業株式会社 半導体レーザ用ヒートシンク
JPH0525756U (ja) * 1991-09-13 1993-04-02 日本航空電子工業株式会社 ヒートシンク付半導体レーザ
JPH06350202A (ja) * 1993-06-10 1994-12-22 Toshiba Corp 半導体発光装置
JPH0738208A (ja) * 1993-07-22 1995-02-07 Nec Corp 半導体レーザ装置
EP1154476B1 (de) 1994-11-30 2012-10-24 Sumitomo Electric Industries, Limited Substrat für Elementmontage
DE19701680C2 (de) 1997-01-18 2001-08-02 Fraunhofer Ges Forschung Diamantkörper
DE19708472C2 (de) * 1997-02-20 1999-02-18 Atotech Deutschland Gmbh Herstellverfahren für chemische Mikroreaktoren
US6670222B1 (en) * 1997-06-14 2003-12-30 Jds Uniphase Corporation Texturing of a die pad surface for enhancing bonding strength in the surface attachment
US6327289B1 (en) * 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
DE10011892A1 (de) * 2000-03-03 2001-09-20 Jenoptik Jena Gmbh Montagesubstrat und Wärmesenke für Hochleistungsdiodenlaserbarren
JP2001298237A (ja) 2000-04-14 2001-10-26 Nippon Telegr & Teleph Corp <Ntt> 半導体光素子搭載用キャリア、半導体光素子モジュール、およびその製造方法
JP4494587B2 (ja) * 2000-05-11 2010-06-30 古河電気工業株式会社 光半導体素子用パッケージおよび前記パッケージを用いた光半導体素子モジュール
JP2002076373A (ja) * 2000-08-25 2002-03-15 Fujitsu Ltd 電子装置及び光学装置

Also Published As

Publication number Publication date
TW200427162A (en) 2004-12-01
US20050094687A1 (en) 2005-05-05
EP1577992B1 (de) 2008-11-26
JPWO2004077630A1 (ja) 2006-06-08
TWI258258B (en) 2006-07-11
US7502397B2 (en) 2009-03-10
EP1577992A4 (de) 2006-01-11
WO2004077630A1 (ja) 2004-09-10
JP4626517B2 (ja) 2011-02-09
EP1577992A1 (de) 2005-09-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition