DE60224273D1 - Mehrstrahl-halbleiterlaserelement - Google Patents

Mehrstrahl-halbleiterlaserelement

Info

Publication number
DE60224273D1
DE60224273D1 DE60224273T DE60224273T DE60224273D1 DE 60224273 D1 DE60224273 D1 DE 60224273D1 DE 60224273 T DE60224273 T DE 60224273T DE 60224273 T DE60224273 T DE 60224273T DE 60224273 D1 DE60224273 D1 DE 60224273D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser element
multiple semiconductor
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60224273T
Other languages
English (en)
Other versions
DE60224273T2 (de
Inventor
Tsuyoshi Tojo
Tomonori Hino
Osamu Goto
Yoshifumi Yabuki
Shinichi Ansai
Shiro Uchida
Masao Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE60224273D1 publication Critical patent/DE60224273D1/de
Application granted granted Critical
Publication of DE60224273T2 publication Critical patent/DE60224273T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60224273T 2001-06-15 2002-06-14 Mehrstrahlhalbleiterlasereinrichtung Expired - Fee Related DE60224273T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001182305 2001-06-15
JP2001182306 2001-06-15
JP2001182306 2001-06-15
JP2001182305 2001-06-15
PCT/JP2002/005967 WO2002103868A1 (fr) 2001-06-15 2002-06-14 Element laser a semi-conducteurs a faisceaux multiples

Publications (2)

Publication Number Publication Date
DE60224273D1 true DE60224273D1 (de) 2008-02-07
DE60224273T2 DE60224273T2 (de) 2008-12-24

Family

ID=26617038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60224273T Expired - Fee Related DE60224273T2 (de) 2001-06-15 2002-06-14 Mehrstrahlhalbleiterlasereinrichtung

Country Status (7)

Country Link
US (2) US6950451B2 (de)
EP (1) EP1396914B1 (de)
JP (1) JP2003069152A (de)
KR (2) KR100872734B1 (de)
CN (1) CN1305193C (de)
DE (1) DE60224273T2 (de)
WO (1) WO2002103868A1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
JP4337520B2 (ja) * 2002-11-25 2009-09-30 日亜化学工業株式会社 リッジ導波路型半導体レーザ
JP2004319915A (ja) * 2003-04-18 2004-11-11 Sharp Corp 半導体レーザー装置の製造方法および半導体レーザー装置
JP3916584B2 (ja) * 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
JP2005150451A (ja) 2003-11-17 2005-06-09 Samsung Electronics Co Ltd マルチビーム発光素子および光走査装置
JP2006093466A (ja) * 2004-09-24 2006-04-06 Toshiba Corp 多波長半導体レーザ素子および多波長半導体レーザ装置
JP2006351966A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
EP1770836B1 (de) 2005-09-29 2015-04-22 OSRAM Opto Semiconductors GmbH Laserdiodenvorrichtung, Laseranordnung mit mindestens einer Laserdiodevorrichtung und optisch gepumpter Laser
JP2007171851A (ja) 2005-12-26 2007-07-05 Sharp Corp レーザ走査光学系及び画像形成装置
US7679098B2 (en) * 2006-01-30 2010-03-16 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Highly directional light emitting diode using photonic bandgap waveguides
WO2007097411A1 (ja) * 2006-02-23 2007-08-30 Rohm Co., Ltd. ２波長半導体発光装置及びその製造方法
JP2007324312A (ja) * 2006-05-31 2007-12-13 Sony Corp 半導体レーザアレイおよび光学装置
US20080130698A1 (en) * 2006-11-30 2008-06-05 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
JP4573863B2 (ja) * 2006-11-30 2010-11-04 三洋電機株式会社 窒化物系半導体素子の製造方法
US9595813B2 (en) * 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
CN105489746B (zh) * 2014-09-19 2018-02-23 展晶科技(深圳)有限公司 发光芯片模组、发光二极管以及发光芯片模组的制造方法
CN104538844B (zh) * 2015-01-27 2018-10-26 中国科学院上海微系统与信息技术研究所 太赫兹量子级联激光器器件结构及其制作方法
JP2016028450A (ja) * 2015-10-23 2016-02-25 株式会社日立製作所 光モジュール
CN105633790A (zh) * 2016-03-09 2016-06-01 中国科学院合肥物质科学研究院 一种利用GaN激光二极管泵浦稀土离子掺杂钽铌酸盐实现可见激光的方法
DE102017119664A1 (de) * 2017-08-28 2019-02-28 Osram Opto Semiconductors Gmbh Kantenemittierender Laserbarren
DE102017121480B4 (de) 2017-09-15 2024-04-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierendes Halbleiterbauteil
US10720758B2 (en) * 2018-03-28 2020-07-21 Lumentum Operations Llc Emitter array with shared via to an ohmic metal shared between adjacent emitters
US11522344B2 (en) 2018-03-28 2022-12-06 Lumentum Operations Llc Optimizing a layout of an emitter array
CN115244805A (zh) * 2020-06-12 2022-10-25 日亚化学工业株式会社 激光二极管元件及其制造方法
GB202010596D0 (en) * 2020-07-09 2020-08-26 Rockley Photonics Ltd Optoelectronic device and method of manufacture thereof
WO2022258756A1 (de) * 2021-06-11 2022-12-15 Osram Opto Semiconductors Gmbh Halbleiterchip und bauelement
WO2023144960A1 (ja) * 2022-01-27 2023-08-03 三菱電機株式会社 光半導体装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2870082B2 (ja) * 1990-01-19 1999-03-10 ソニー株式会社 半導体レーザ
WO1997011518A1 (en) 1995-09-18 1997-03-27 Hitachi, Ltd. Semiconductor material, method of producing the semiconductor material, and semiconductor device
US6031858A (en) * 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
US6185238B1 (en) * 1997-02-21 2001-02-06 Kabushiki Kaisha Toshiba Nitride compound semiconductor laser and its manufacturing method
JP4169821B2 (ja) * 1998-02-18 2008-10-22 シャープ株式会社 発光ダイオード
JP4032538B2 (ja) * 1998-11-26 2008-01-16 ソニー株式会社 半導体薄膜および半導体素子の製造方法
JP2000196197A (ja) 1998-12-30 2000-07-14 Xerox Corp 成長基板が除去された窒化物レ―ザダイオ―ドの構造及び窒化物レ―ザダイオ―ドアレイ構造の製造方法
US6744800B1 (en) * 1998-12-30 2004-06-01 Xerox Corporation Method and structure for nitride based laser diode arrays on an insulating substrate
JP2000277863A (ja) 1999-03-24 2000-10-06 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
JP3328227B2 (ja) 1999-06-22 2002-09-24 株式会社エヌ・ティ・ティ・データ データ通信システム
JP2001007443A (ja) * 1999-06-25 2001-01-12 Matsushita Electric Ind Co Ltd 半導体発光装置の製造方法
EP1104031B1 (de) * 1999-11-15 2012-04-11 Panasonic Corporation Nitrid-Halbleiterlaserdiode und deren Herstellungsverfahren
JP2001217503A (ja) 2000-02-03 2001-08-10 Matsushita Electric Ind Co Ltd ＧａＮ系半導体発光素子およびその製造方法
JP3889910B2 (ja) * 2000-03-10 2007-03-07 三菱化学株式会社 半導体発光装置およびその製造方法
JP4120184B2 (ja) * 2000-06-30 2008-07-16 セイコーエプソン株式会社 実装用微小構造体および光伝送装置
JP3455500B2 (ja) * 2000-06-30 2003-10-14 学校法人 名城大学 半導体レーザ及び半導体レーザの製造方法
JP2002076522A (ja) * 2000-09-01 2002-03-15 Nec Corp 窒化物半導体レーザ
CN1136207C (zh) * 2000-10-19 2004-01-28 大连化学工业股份有限公司 制备内酯用的催化剂及内酯的制备方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子

Also Published As

Publication number Publication date
KR100872734B1 (ko) 2008-12-08
KR100890717B1 (ko) 2009-03-27
DE60224273T2 (de) 2008-12-24
EP1396914A1 (de) 2004-03-10
EP1396914B1 (de) 2007-12-26
US7149235B2 (en) 2006-12-12
WO2002103868A1 (fr) 2002-12-27
EP1396914A4 (de) 2004-12-22
JP2003069152A (ja) 2003-03-07
US20040170203A1 (en) 2004-09-02
US20050218422A1 (en) 2005-10-06
KR20080051182A (ko) 2008-06-10
CN1515053A (zh) 2004-07-21
CN1305193C (zh) 2007-03-14
KR20040006034A (ko) 2004-01-16
US6950451B2 (en) 2005-09-27

Similar Documents

Publication Publication Date Title
DE60224273D1 (de) Mehrstrahl-halbleiterlaserelement
DE60239445D1 (de) Halbleiterlaserstruktur
DE60227232D1 (de) Halbleiterlaserstruktur
DE60129991D1 (de) Halbleiterlaserbauelement
DE60234590D1 (de) Nitridhalbleiterlaser
DE60212857D1 (de) Thermischer schnappschalter
ATE402148T1 (de) Substituierte pyridinylamine
DE60227475D1 (de) Halbleiterbauelement
DE60324962D1 (de) Halbleiterlaseranordnung
DE50206892D1 (de) Substituierte imidazotriazinone
DE60313777D1 (de) Optisches halbleiterbauelement
DE60222724D1 (de) Halbleiterlaserelement
DE60129750D1 (de) Antiblend-, antibeschlagselement
DE02796975T1 (de) Hochtemperatur-gasreformier-zykloverbrennungsvorrichtung
DE60212902D1 (de) Hochleistungshalbleiterdiodenlaser
DE60225790D1 (de) Halbleiterbauelement
DE60229712D1 (de) Halbleiterspeicher
ATE435197T1 (de) Substituierte 4-aminocyclohexanole
DE50104634D1 (de) Halbleiter-laser
DE10196557T1 (de) Laserstrahlvorrichtung
DE60215131D1 (de) Integriertes Halbleiterlaser-Wellenleiter-Element
DE50210548D1 (de) Spannbaugruppe
ATA5612001A (de) Halbleitermodul
DE50100099D1 (de) Anschlusselement
ITMI20010954A0 (it) Procedimento di iodurazione

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee