DE60225790D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE60225790D1
DE60225790D1 DE60225790T DE60225790T DE60225790D1 DE 60225790 D1 DE60225790 D1 DE 60225790D1 DE 60225790 T DE60225790 T DE 60225790T DE 60225790 T DE60225790 T DE 60225790T DE 60225790 D1 DE60225790 D1 DE 60225790D1
Authority
DE
Germany
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60225790T
Other languages
English (en)
Other versions
DE60225790T2 (de
Inventor
Akira Inoue
Takeshi Takagi
Yoshihiro Hara
Minoru Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE60225790D1 publication Critical patent/DE60225790D1/de
Application granted granted Critical
Publication of DE60225790T2 publication Critical patent/DE60225790T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/783—Field effect transistors with field effect produced by an insulated gate comprising a gate to body connection, i.e. bulk dynamic threshold voltage MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
DE60225790T 2001-04-18 2002-04-18 Halbleiterbauelement Expired - Fee Related DE60225790T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001119586 2001-04-18
JP2001119586 2001-04-18
PCT/JP2002/003890 WO2002086976A1 (fr) 2001-04-18 2002-04-18 Dispositif semi-conducteur

Publications (2)

Publication Number Publication Date
DE60225790D1 true DE60225790D1 (de) 2008-05-08
DE60225790T2 DE60225790T2 (de) 2009-06-18

Family

ID=18969778

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60225790T Expired - Fee Related DE60225790T2 (de) 2001-04-18 2002-04-18 Halbleiterbauelement

Country Status (7)

Country Link
US (1) US6815735B2 (de)
EP (1) EP1381088B1 (de)
JP (1) JP3530521B2 (de)
CN (1) CN1312778C (de)
DE (1) DE60225790T2 (de)
TW (1) TW541699B (de)
WO (1) WO2002086976A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6921743B2 (en) * 2001-04-02 2005-07-26 The Procter & Gamble Company Automatic dishwashing compositions containing a halogen dioxide salt and methods for use with electrochemical cells and/or electrolytic devices
JPWO2004097943A1 (ja) * 2003-04-28 2006-07-13 松下電器産業株式会社 半導体装置とその製造方法
KR100624415B1 (ko) * 2003-12-17 2006-09-18 삼성전자주식회사 광디바이스 및 그 제조방법
US7005333B2 (en) * 2003-12-30 2006-02-28 Infineon Technologies Ag Transistor with silicon and carbon layer in the channel region
US7002224B2 (en) * 2004-02-03 2006-02-21 Infineon Technologies Ag Transistor with doped gate dielectric
US7094671B2 (en) * 2004-03-22 2006-08-22 Infineon Technologies Ag Transistor with shallow germanium implantation region in channel
US7078723B2 (en) * 2004-04-06 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Microelectronic device with depth adjustable sill
DE112005002418B4 (de) * 2004-10-07 2017-01-05 Fairchild Semiconductor Corporation Leistungstransistoren mit MOS-Gate und konstruierter Bandlücke
JP4916247B2 (ja) * 2006-08-08 2012-04-11 トヨタ自動車株式会社 炭化珪素半導体装置及びその製造方法
US20080296705A1 (en) * 2007-05-29 2008-12-04 United Microelectronics Corp. Gate and manufacturing method of gate material
CN102569353A (zh) * 2011-01-04 2012-07-11 中国科学院微电子研究所 半导体结构及其制备方法
US20150270344A1 (en) 2014-03-21 2015-09-24 International Business Machines Corporation P-fet with graded silicon-germanium channel
US9799756B1 (en) * 2016-08-05 2017-10-24 International Business Machines Corporation Germanium lateral bipolar transistor with silicon passivation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691249B2 (ja) * 1991-01-10 1994-11-14 インターナショナル・ビジネス・マシーンズ・コーポレイション 変調ドープ形ｍｉｓｆｅｔ及びその製造方法
US5777364A (en) * 1992-11-30 1998-07-07 International Business Machines Corporation Graded channel field effect transistor
JP3592981B2 (ja) * 1999-01-14 2004-11-24 松下電器産業株式会社 半導体装置及びその製造方法
JP3174852B2 (ja) * 1999-03-05 2001-06-11 東京大学長 しきい値電圧を制御しうるｍｏｓトランジスタを有する回路及びしきい値電圧制御方法
JP4220665B2 (ja) * 1999-11-15 2009-02-04 パナソニック株式会社 半導体装置
EP1102327B1 (de) 1999-11-15 2007-10-03 Matsushita Electric Industrial Co., Ltd. Feldeffekt-Halbleiterbauelement
US20020179946A1 (en) 2000-10-19 2002-12-05 Yoshiro Hara P-channel field-effect transistor

Also Published As

Publication number Publication date
WO2002086976A1 (fr) 2002-10-31
US6815735B2 (en) 2004-11-09
EP1381088B1 (de) 2008-03-26
CN1533609A (zh) 2004-09-29
US20030146473A1 (en) 2003-08-07
JPWO2002086976A1 (ja) 2004-08-12
TW541699B (en) 2003-07-11
JP3530521B2 (ja) 2004-05-24
DE60225790T2 (de) 2009-06-18
EP1381088A4 (de) 2004-07-07
EP1381088A1 (de) 2004-01-14
CN1312778C (zh) 2007-04-25

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee