DE60327718D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE60327718D1
DE60327718D1 DE60327718T DE60327718T DE60327718D1 DE 60327718 D1 DE60327718 D1 DE 60327718D1 DE 60327718 T DE60327718 T DE 60327718T DE 60327718 T DE60327718 T DE 60327718T DE 60327718 D1 DE60327718 D1 DE 60327718D1
Authority
DE
Germany
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60327718T
Other languages
English (en)
Inventor
Osamu Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Application granted granted Critical
Publication of DE60327718D1 publication Critical patent/DE60327718D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE60327718T 2003-05-28 2003-05-28 Halbleiterbauelement Expired - Lifetime DE60327718D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/006714 WO2004107578A1 (ja) 2003-05-28 2003-05-28 半導体装置

Publications (1)

Publication Number Publication Date
DE60327718D1 true DE60327718D1 (de) 2009-07-02

Family

ID=33485778

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60327718T Expired - Lifetime DE60327718D1 (de) 2003-05-28 2003-05-28 Halbleiterbauelement

Country Status (7)

Country Link
US (1) US7208978B2 (de)
EP (1) EP1628399B1 (de)
JP (1) JP4137118B2 (de)
CN (1) CN1701511B (de)
AU (1) AU2003241869A1 (de)
DE (1) DE60327718D1 (de)
WO (1) WO2004107578A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006030448B4 (de) 2006-06-29 2022-08-18 Phoenix Contact Gmbh & Co. Kg Sichere Ausgangsschaltung mit einem einkanaligen Peripherieanschluss für den Ausgang eines Bus-Teilnehmers
US7375555B1 (en) 2007-05-15 2008-05-20 Microchip Technology Incorporated Five volt tolerant integrated circuit signal pad with three volt assist
US8228109B2 (en) * 2010-06-28 2012-07-24 Freescale Semiconductor, Inc. Transmission gate circuitry for high voltage terminal
US8283947B1 (en) * 2011-06-03 2012-10-09 Nxp B.V. High voltage tolerant bus holder circuit and method of operating the circuit
CN106160717B (zh) 2015-04-03 2020-08-18 恩智浦美国有限公司 传输门电路
CN106411311B (zh) * 2015-07-31 2019-10-01 旺宏电子股份有限公司 输出电路
CN107306130B (zh) * 2016-04-18 2020-10-09 中芯国际集成电路制造(上海)有限公司 Io接收机
WO2018159332A1 (ja) 2017-03-03 2018-09-07 株式会社ソシオネクスト 半導体集積回路
JP6971941B2 (ja) * 2018-09-07 2021-11-24 株式会社東芝 半導体装置
KR102577131B1 (ko) * 2018-12-10 2023-09-11 주식회사 디비하이텍 입출력 회로 및 이를 포함하는 전자 소자
JP7503895B2 (ja) 2019-09-02 2024-06-21 ルネサスエレクトロニクス株式会社 半導体装置
JP7300968B2 (ja) * 2019-11-14 2023-06-30 三菱電機株式会社 半導体装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4782250A (en) * 1987-08-31 1988-11-01 International Business Machines Corporation CMOS off-chip driver circuits
US5387826A (en) * 1993-02-10 1995-02-07 National Semiconductor Corporation Overvoltage protection against charge leakage in an output driver
EP0702860B1 (de) * 1993-06-07 1997-12-29 National Semiconductor Corporation Überspannungsschutz
US5406140A (en) * 1993-06-07 1995-04-11 National Semiconductor Corporation Voltage translation and overvoltage protection
JPH0766710A (ja) * 1993-08-26 1995-03-10 Hitachi Ltd 入出力バッファ回路
JP3562725B2 (ja) * 1993-12-24 2004-09-08 川崎マイクロエレクトロニクス株式会社 出力バッファ回路、および入出力バッファ回路
JP3311133B2 (ja) * 1994-02-16 2002-08-05 株式会社東芝 出力回路
US5966026A (en) * 1995-02-14 1999-10-12 Advanced Micro Devices, Inc. Output buffer with improved tolerance to overvoltage
JP3557694B2 (ja) * 1995-03-07 2004-08-25 松下電器産業株式会社 出力回路
US5543733A (en) * 1995-06-26 1996-08-06 Vlsi Technology, Inc. High voltage tolerant CMOS input/output circuit
US5952848A (en) * 1997-03-14 1999-09-14 Lucent Technologies Inc. High-voltage tolerant input buffer in low-voltage technology
US5926056A (en) * 1998-01-12 1999-07-20 Lucent Technologies Inc. Voltage tolerant output buffer
US6150843A (en) * 1998-01-29 2000-11-21 Vlsi Technology, Inc. Five volt tolerant I/O buffer
JPH11317652A (ja) * 1998-02-13 1999-11-16 Matsushita Electric Ind Co Ltd 出力回路
US6028450A (en) * 1998-03-17 2000-02-22 Xilinx, Inc. Programmable input/output circuit with pull-up bias control
US6081412A (en) * 1998-07-20 2000-06-27 National Semiconductor Corporation Gate oxide breakdown protection circuit for deep submicron processes
JP3746396B2 (ja) * 1999-04-27 2006-02-15 富士通株式会社 出力回路及び入出力回路
US6236236B1 (en) * 1999-06-02 2001-05-22 National Semiconductor Corporation 2.5 volt input/output buffer circuit tolerant to 3.3 and 5 volts
JP3551926B2 (ja) * 2000-02-22 2004-08-11 ヤマハ株式会社 バッファ回路
US6320415B1 (en) * 2000-04-03 2001-11-20 United Microelectronics Corp. CMOS input/output control circuit capable of tolerating different voltage input
JP3742335B2 (ja) * 2001-12-20 2006-02-01 富士通株式会社 入出力バッファ回路

Also Published As

Publication number Publication date
US7208978B2 (en) 2007-04-24
AU2003241869A1 (en) 2005-01-21
EP1628399A1 (de) 2006-02-22
EP1628399B1 (de) 2009-05-20
CN1701511B (zh) 2010-05-12
JP4137118B2 (ja) 2008-08-20
US20050189963A1 (en) 2005-09-01
JPWO2004107578A1 (ja) 2006-07-20
WO2004107578A1 (ja) 2004-12-09
CN1701511A (zh) 2005-11-23
EP1628399A4 (de) 2006-07-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE