DE60216046D1 - Halbleiterstruktur - Google Patents

Halbleiterstruktur

Info

Publication number
DE60216046D1
DE60216046D1 DE60216046T DE60216046T DE60216046D1 DE 60216046 D1 DE60216046 D1 DE 60216046D1 DE 60216046 T DE60216046 T DE 60216046T DE 60216046 T DE60216046 T DE 60216046T DE 60216046 D1 DE60216046 D1 DE 60216046D1
Authority
DE
Germany
Prior art keywords
semiconductor structure
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60216046T
Other languages
English (en)
Inventor
Jeff Raynor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Ltd filed Critical SGS Thomson Microelectronics Ltd
Application granted granted Critical
Publication of DE60216046D1 publication Critical patent/DE60216046D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE60216046T 2002-04-18 2002-04-18 Halbleiterstruktur Expired - Lifetime DE60216046D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02252751A EP1355360B1 (de) 2002-04-18 2002-04-18 Halbleiterstruktur

Publications (1)

Publication Number Publication Date
DE60216046D1 true DE60216046D1 (de) 2006-12-28

Family

ID=28459584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60216046T Expired - Lifetime DE60216046D1 (de) 2002-04-18 2002-04-18 Halbleiterstruktur

Country Status (3)

Country Link
US (1) US6998659B2 (de)
EP (1) EP1355360B1 (de)
DE (1) DE60216046D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602004025681D1 (de) * 2004-06-15 2010-04-08 St Microelectronics Res & Dev Bildsensor
US8039875B2 (en) 2005-08-08 2011-10-18 International Business Machines Corporation Structure for pixel sensor cell that collects electrons and holes
US7439561B2 (en) * 2005-08-08 2008-10-21 International Business Machines Corporation Pixel sensor cell for collecting electrons and holes
EP2307130A1 (de) * 2008-06-27 2011-04-13 STMicroelectronics (Research & Development) Limited Pixelvorrichtung für die biologische analyse, cmos-biosensor und entsprechende herstellungsverfahren
US9105548B2 (en) * 2011-06-22 2015-08-11 California Institute Of Technology Sparsely-bonded CMOS hybrid imager
US9818777B2 (en) 2015-11-12 2017-11-14 Stmicroelectronics (Research & Development) Limited Hybrid analog-digital pixel implemented in a stacked configuration
US10418402B2 (en) 2017-11-30 2019-09-17 Stmicroelectronics (Research & Development) Limited Near ultraviolet photocell
EP3839930A1 (de) 2019-12-19 2021-06-23 STMicroelectronics (Research & Development) Limited Verfahren und vorrichtung zur umgebungslichtmessung
EP4080874A1 (de) 2021-04-23 2022-10-26 STMicroelectronics (Research & Development) Limited Lichtsensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265866A (ja) * 1985-05-20 1986-11-25 Sharp Corp 回路内蔵受光素子
JPH0730144A (ja) * 1993-06-28 1995-01-31 Xerox Corp イメージセンサ配列用低容量感光素子
JPH09199752A (ja) * 1996-01-22 1997-07-31 Canon Inc 光電変換装置及び画像読取装置
JP3359258B2 (ja) * 1997-05-30 2002-12-24 キヤノン株式会社 光電変換装置及びそれを用いたイメージセンサ、画像読取装置
JP3592037B2 (ja) * 1997-05-30 2004-11-24 キヤノン株式会社 光電変換装置
US5898196A (en) * 1997-10-10 1999-04-27 International Business Machines Corporation Dual EPI active pixel cell design and method of making the same
GB2339333B (en) * 1998-06-29 2003-07-09 Hyundai Electronics Ind Photodiode having charge function and image sensor using the same

Also Published As

Publication number Publication date
US20030218195A1 (en) 2003-11-27
US6998659B2 (en) 2006-02-14
EP1355360B1 (de) 2006-11-15
EP1355360A1 (de) 2003-10-22

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Legal Events

Date Code Title Description
8332 No legal effect for de