DE602004031698D1 - Integrierte Halbleiterschaltung - Google Patents
Integrierte HalbleiterschaltungInfo
- Publication number
- DE602004031698D1 DE602004031698D1 DE602004031698T DE602004031698T DE602004031698D1 DE 602004031698 D1 DE602004031698 D1 DE 602004031698D1 DE 602004031698 T DE602004031698 T DE 602004031698T DE 602004031698 T DE602004031698 T DE 602004031698T DE 602004031698 D1 DE602004031698 D1 DE 602004031698D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor circuit
- integrated semiconductor
- integrated
- circuit
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5225—Shielding layers formed together with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003295958A JP4250038B2 (ja) | 2003-08-20 | 2003-08-20 | 半導体集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004031698D1 true DE602004031698D1 (de) | 2011-04-21 |
Family
ID=34056227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004031698T Active DE602004031698D1 (de) | 2003-08-20 | 2004-07-30 | Integrierte Halbleiterschaltung |
Country Status (8)
Country | Link |
---|---|
US (1) | US7498663B2 (de) |
EP (1) | EP1508917B1 (de) |
JP (1) | JP4250038B2 (de) |
KR (1) | KR100614165B1 (de) |
CN (1) | CN100576508C (de) |
DE (1) | DE602004031698D1 (de) |
SG (1) | SG109612A1 (de) |
TW (1) | TWI248134B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005022473B4 (de) | 2005-05-14 | 2007-05-24 | Forschungszentrum Karlsruhe Gmbh | Vorrichtung zur Dämpfung von Reflexionen elektromagnetischer Wellen, Verfahren zu ihrer Herstellung und ihre Verwendung |
GB0523437D0 (en) * | 2005-11-17 | 2005-12-28 | Imp College Innovations Ltd | A method of patterning a thin film |
JP4436334B2 (ja) * | 2006-03-02 | 2010-03-24 | パナソニック株式会社 | シールド基板、半導体パッケージ、及び半導体装置 |
JP4908899B2 (ja) * | 2006-04-07 | 2012-04-04 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
US8309453B2 (en) * | 2007-01-29 | 2012-11-13 | United Microelectronics Corp. | Multilevel interconnects structure with shielding function and fabricating method thereof |
JP5085487B2 (ja) * | 2008-05-07 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5546895B2 (ja) * | 2009-04-30 | 2014-07-09 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
FR2950997B1 (fr) * | 2009-10-05 | 2011-12-09 | St Microelectronics Rousset | Puce de circuit integre protegee contre des attaques laser |
FR2951016B1 (fr) * | 2009-10-05 | 2012-07-13 | St Microelectronics Rousset | Procede de protection d'une puce de circuit integre contre des attaques laser |
EP2306518B1 (de) * | 2009-10-05 | 2014-12-31 | STMicroelectronics (Rousset) SAS | Methode zum Schutz eines Chips mit integrierter Schaltung vor Analyse durch Laserbestrahlung. |
KR101276606B1 (ko) * | 2009-12-04 | 2013-06-19 | 한국전자통신연구원 | 전자파 저감 반도체 칩 |
FR2980636B1 (fr) * | 2011-09-22 | 2016-01-08 | St Microelectronics Rousset | Protection d'un dispositif electronique contre une attaque laser en face arriere, et support semiconducteur correspondant |
CN103928443B (zh) * | 2013-01-11 | 2018-01-09 | 日月光半导体制造股份有限公司 | 堆叠式封装模块与其制造方法、电子装置 |
US10081535B2 (en) * | 2013-06-25 | 2018-09-25 | Analog Devices, Inc. | Apparatus and method for shielding and biasing in MEMS devices encapsulated by active circuitry |
GB201311834D0 (en) * | 2013-07-02 | 2013-08-14 | Qinetiq Ltd | Electronic hardware assembly |
TWI747805B (zh) * | 2014-10-08 | 2021-12-01 | 日商索尼半導體解決方案公司 | 攝像裝置及製造方法、以及電子機器 |
CN114050124A (zh) | 2015-03-31 | 2022-02-15 | 浜松光子学株式会社 | 半导体装置的制造方法 |
EP3188231B1 (de) * | 2015-12-29 | 2023-01-04 | Secure-IC SAS | System und verfahren zum schutz einer integrierten schaltungsvorrichtung (ic) |
TWI694569B (zh) * | 2016-04-13 | 2020-05-21 | 日商濱松赫德尼古斯股份有限公司 | 半導體裝置 |
US10903173B2 (en) * | 2016-10-20 | 2021-01-26 | Palo Alto Research Center Incorporated | Pre-conditioned substrate |
JP7179019B2 (ja) * | 2017-12-20 | 2022-11-28 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669040B2 (ja) * | 1985-05-13 | 1994-08-31 | 株式会社東芝 | 光半導体装置 |
US5325094A (en) * | 1986-11-25 | 1994-06-28 | Chomerics, Inc. | Electromagnetic energy absorbing structure |
JPH02209735A (ja) * | 1989-02-09 | 1990-08-21 | Seiko Epson Corp | 半導体装置 |
US5329155A (en) * | 1990-04-24 | 1994-07-12 | Xerox Corporation | Thin film integrated circuit resistor |
JPH0574771A (ja) | 1991-09-17 | 1993-03-26 | Nec Corp | 集積回路 |
US5389738A (en) * | 1992-05-04 | 1995-02-14 | Motorola, Inc. | Tamperproof arrangement for an integrated circuit device |
ES2270623T3 (es) * | 1998-11-05 | 2007-04-01 | Infineon Technologies Ag | Circuito de proteccion para un circuito integrado. |
JP2003078022A (ja) * | 2001-09-06 | 2003-03-14 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP4274730B2 (ja) * | 2002-01-30 | 2009-06-10 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US6888063B1 (en) * | 2003-10-15 | 2005-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and method for providing shielding in radio frequency integrated circuits to reduce noise coupling |
-
2003
- 2003-08-20 JP JP2003295958A patent/JP4250038B2/ja not_active Expired - Fee Related
-
2004
- 2004-07-28 TW TW093122594A patent/TWI248134B/zh not_active IP Right Cessation
- 2004-07-30 DE DE602004031698T patent/DE602004031698D1/de active Active
- 2004-07-30 EP EP04254579A patent/EP1508917B1/de not_active Expired - Fee Related
- 2004-08-17 SG SG200405052A patent/SG109612A1/en unknown
- 2004-08-19 US US10/921,172 patent/US7498663B2/en not_active Expired - Fee Related
- 2004-08-19 KR KR1020040065458A patent/KR100614165B1/ko not_active IP Right Cessation
- 2004-08-20 CN CN200410057877A patent/CN100576508C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1508917B1 (de) | 2011-03-09 |
KR100614165B1 (ko) | 2006-08-25 |
US20050040500A1 (en) | 2005-02-24 |
JP2005064411A (ja) | 2005-03-10 |
TW200509260A (en) | 2005-03-01 |
US7498663B2 (en) | 2009-03-03 |
SG109612A1 (en) | 2005-03-30 |
TWI248134B (en) | 2006-01-21 |
EP1508917A2 (de) | 2005-02-23 |
JP4250038B2 (ja) | 2009-04-08 |
CN100576508C (zh) | 2009-12-30 |
EP1508917A3 (de) | 2006-09-20 |
CN1585113A (zh) | 2005-02-23 |
KR20050020684A (ko) | 2005-03-04 |
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