DE60321866D1 - Halbleiter integrierte Schaltungsvorrichtung - Google Patents

Halbleiter integrierte Schaltungsvorrichtung

Info

Publication number
DE60321866D1
DE60321866D1 DE60321866T DE60321866T DE60321866D1 DE 60321866 D1 DE60321866 D1 DE 60321866D1 DE 60321866 T DE60321866 T DE 60321866T DE 60321866 T DE60321866 T DE 60321866T DE 60321866 D1 DE60321866 D1 DE 60321866D1
Authority
DE
Germany
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60321866T
Other languages
English (en)
Inventor
Hideki Ishida
Megumi Oono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60321866D1 publication Critical patent/DE60321866D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—Dc amplifiers in which all stages are dc-coupled
    • H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
    • H03F3/345—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45658—Indexing scheme relating to differential amplifiers the LC comprising two diodes of current mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45702—Indexing scheme relating to differential amplifiers the LC comprising two resistors
DE60321866T 2002-07-26 2003-07-04 Halbleiter integrierte Schaltungsvorrichtung Expired - Lifetime DE60321866D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002218433A JP4070533B2 (ja) 2002-07-26 2002-07-26 半導体集積回路装置

Publications (1)

Publication Number Publication Date
DE60321866D1 true DE60321866D1 (de) 2008-08-14

Family

ID=29997300

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60321866T Expired - Lifetime DE60321866D1 (de) 2002-07-26 2003-07-04 Halbleiter integrierte Schaltungsvorrichtung

Country Status (6)

Country Link
US (2) US6844773B2 (de)
EP (2) EP1385075B1 (de)
JP (1) JP4070533B2 (de)
KR (1) KR100967365B1 (de)
CN (1) CN1266838C (de)
DE (1) DE60321866D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070271145A1 (en) * 2004-07-20 2007-11-22 Vest Herb D Consolidated System for Managing Internet Ads
EP1619687A1 (de) * 2004-07-21 2006-01-25 STMicroelectronics S.r.l. Verteilung einer Referenzspannung in einer Schaltung
KR100629619B1 (ko) 2005-08-23 2006-10-02 삼성전자주식회사 기준전류 생성회로, 바이어스 전압 생성회로 및 이들을이용한 바이어스 회로
US7629832B2 (en) * 2006-04-28 2009-12-08 Advanced Analog Silicon IP Corporation Current source circuit and design methodology
JP5061957B2 (ja) * 2008-02-29 2012-10-31 ソニー株式会社 半導体集積回路
CN101739052B (zh) * 2009-11-26 2012-01-18 四川和芯微电子股份有限公司 一种与电源无关的电流参考源
CN102571044A (zh) * 2010-12-22 2012-07-11 无锡华润上华半导体有限公司 电压比较器
CN103377696B (zh) * 2012-04-24 2016-06-08 北京兆易创新科技股份有限公司 一种为存储单元提供稳定电压的系统
US20140225662A1 (en) * 2013-02-11 2014-08-14 Nvidia Corporation Low-voltage, high-accuracy current mirror circuit
JP6443336B2 (ja) * 2013-09-27 2018-12-26 株式会社ソシオネクスト 半導体集積回路および論理回路
TWI720305B (zh) * 2018-04-10 2021-03-01 智原科技股份有限公司 電壓產生電路
US10355694B1 (en) * 2018-04-24 2019-07-16 Stmicroelectronics International N.V. Level shifting circuit with conditional body biasing of transistors
CN109213256B (zh) * 2018-09-27 2020-08-04 北京中电华大电子设计有限责任公司 一种恒流源供电电路
US10707845B2 (en) * 2018-11-13 2020-07-07 Marvell International Ltd. Ultra-low voltage level shifter
US11353901B2 (en) 2019-11-15 2022-06-07 Texas Instruments Incorporated Voltage threshold gap circuits with temperature trim
US20220247362A1 (en) * 2021-02-02 2022-08-04 Macronix International Co., Ltd. High-speed, low distortion receiver circuit

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904953A (en) * 1988-04-22 1990-02-27 Triquint Semiconductor, Inc. Differential amplifier with common-mode bias feedback
JPH03217915A (ja) 1990-01-24 1991-09-25 Hitachi Ltd 半導体集積回路装置
US5132560A (en) * 1990-09-28 1992-07-21 Siemens Corporate Research, Inc. Voltage comparator with automatic output-level adjustment
US5198782A (en) * 1991-01-15 1993-03-30 Crystal Semiconductor Low distortion amplifier output stage for dac
US5455816A (en) * 1992-05-18 1995-10-03 At&T Global Information Solutions Company MOS amplifier with gain control
JPH07106869A (ja) * 1993-09-30 1995-04-21 Nec Corp 定電流回路
JP2892287B2 (ja) * 1994-02-04 1999-05-17 松下電器産業株式会社 演算増幅器
JP2885120B2 (ja) * 1995-01-27 1999-04-19 日本電気株式会社 演算増幅器
JPH08288761A (ja) * 1995-04-10 1996-11-01 Fujitsu Ltd 差動増幅＆出力オフセット回路及びこれを備えた半導体集積回路並びにノイズ除去方法
JPH0974340A (ja) * 1995-09-04 1997-03-18 Toshiba Corp コンパレータ回路
JPH10143264A (ja) 1996-11-14 1998-05-29 Olympus Optical Co Ltd 定電圧回路
JP3464372B2 (ja) * 1997-11-19 2003-11-10 日本プレシジョン・サーキッツ株式会社 発振器
KR100272508B1 (ko) * 1997-12-12 2000-11-15 김영환 내부전압(vdd) 발생회로
US6081108A (en) * 1997-12-18 2000-06-27 Texas Instruments Incorporated Level shifter/amplifier circuit
JP3289276B2 (ja) * 1999-05-27 2002-06-04 日本電気株式会社 半導体装置
JP2002108468A (ja) 2000-09-28 2002-04-10 Toshiba Corp 電流源回路
JP2002118432A (ja) * 2000-10-06 2002-04-19 Niigata Seimitsu Kk 電界強度検出回路およびリミッタアンプ
KR100542685B1 (ko) * 2001-06-18 2006-01-16 매그나칩 반도체 유한회사 출력버퍼용 연산 트랜스컨덕턴스 증폭기
US6535030B1 (en) * 2001-06-19 2003-03-18 Xilinx, Inc. Differential comparator with offset correction
US6798290B2 (en) * 2001-08-31 2004-09-28 Sequoia Communications Translinear variable gain amplifier
TWI273768B (en) * 2001-12-19 2007-02-11 Himax Tech Ltd Operational transconductance amplifier and driving method for improving a power efficiency of the operational transconductance amplifier
US6756847B2 (en) * 2002-03-01 2004-06-29 Broadcom Corporation Operational amplifier with increased common mode input range
US6741130B2 (en) * 2002-09-23 2004-05-25 Meng-Jer Wey High-speed output transconductance amplifier capable of operating at different voltage levels
US6774721B1 (en) * 2003-03-07 2004-08-10 Quake Technologies, Inc. High speed logic circuits

Also Published As

Publication number Publication date
EP1739517B1 (de) 2012-08-08
EP1385075B1 (de) 2008-07-02
EP1385075A3 (de) 2005-11-02
JP4070533B2 (ja) 2008-04-02
US20040017248A1 (en) 2004-01-29
EP1739517A3 (de) 2007-01-10
CN1476169A (zh) 2004-02-18
US7659766B2 (en) 2010-02-09
US20050083031A1 (en) 2005-04-21
CN1266838C (zh) 2006-07-26
JP2004062424A (ja) 2004-02-26
KR20040010345A (ko) 2004-01-31
EP1739517A2 (de) 2007-01-03
EP1385075A2 (de) 2004-01-28
US6844773B2 (en) 2005-01-18
KR100967365B1 (ko) 2010-07-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE