DE10362232B8 - Leistungshalbleitervorrichtung - Google Patents

Leistungshalbleitervorrichtung Download PDF

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Publication number
DE10362232B8
DE10362232B8 DE10362232A DE10362232A DE10362232B8 DE 10362232 B8 DE10362232 B8 DE 10362232B8 DE 10362232 A DE10362232 A DE 10362232A DE 10362232 A DE10362232 A DE 10362232A DE 10362232 B8 DE10362232 B8 DE 10362232B8
Authority
DE
Germany
Prior art keywords
semiconductor device
power semiconductor
power
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10362232A
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English (en)
Other versions
DE10362232B4 (de
Inventor
Tetsuo Takahashi
Hideki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10362232B4 publication Critical patent/DE10362232B4/de
Application granted granted Critical
Publication of DE10362232B8 publication Critical patent/DE10362232B8/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
DE10362232A 2002-05-27 2003-01-23 Leistungshalbleitervorrichtung Expired - Fee Related DE10362232B8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002152090A JP2003347547A (ja) 2002-05-27 2002-05-27 電力用半導体装置及びその製造方法
JP2002-152090 2002-05-27
JP02-152090 2002-05-27

Publications (2)

Publication Number Publication Date
DE10362232B4 DE10362232B4 (de) 2011-06-30
DE10362232B8 true DE10362232B8 (de) 2011-11-10

Family

ID=29545392

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10302628A Expired - Fee Related DE10302628B4 (de) 2002-05-27 2003-01-23 Leistungshalbleitervorrichtung
DE10362232A Expired - Fee Related DE10362232B8 (de) 2002-05-27 2003-01-23 Leistungshalbleitervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10302628A Expired - Fee Related DE10302628B4 (de) 2002-05-27 2003-01-23 Leistungshalbleitervorrichtung

Country Status (3)

Country Link
US (1) US6888206B2 (de)
JP (1) JP2003347547A (de)
DE (2) DE10302628B4 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2373634B (en) * 2000-10-31 2004-12-08 Fuji Electric Co Ltd Semiconductor device
US7652326B2 (en) * 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US20060255401A1 (en) * 2005-05-11 2006-11-16 Yang Robert K Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures
US20070012983A1 (en) * 2005-07-15 2007-01-18 Yang Robert K Terminations for semiconductor devices with floating vertical series capacitive structures
JP5036327B2 (ja) * 2007-01-23 2012-09-26 三菱電機株式会社 半導体装置及びその製造方法
JP5285874B2 (ja) * 2007-07-03 2013-09-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5286706B2 (ja) * 2007-07-10 2013-09-11 三菱電機株式会社 電力用半導体装置とその製造方法
CN101345254A (zh) * 2007-07-12 2009-01-14 富士电机电子技术株式会社 半导体器件
JP5298488B2 (ja) 2007-09-28 2013-09-25 富士電機株式会社 半導体装置
JP5195186B2 (ja) * 2008-09-05 2013-05-08 三菱電機株式会社 半導体装置の製造方法
EP2357670B1 (de) * 2008-12-10 2015-04-01 Toyota Jidosha Kabushiki Kaisha Halbleiterbauelement
JP5376365B2 (ja) * 2009-04-16 2013-12-25 三菱電機株式会社 半導体装置
JP5224289B2 (ja) * 2009-05-12 2013-07-03 三菱電機株式会社 半導体装置
DE102010024257B4 (de) * 2010-06-18 2020-04-30 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleiterbauelement mit zweistufigem Dotierungsprofil
JP2012204811A (ja) * 2011-03-28 2012-10-22 Sony Corp 半導体装置
KR101279216B1 (ko) 2011-08-17 2013-06-26 주식회사 케이이씨 반도체 장치의 제조 방법
DE112012004043B4 (de) * 2011-09-28 2018-03-22 Mitsubishi Electric Corporation Halbleitereinrichtung
JP2013149761A (ja) * 2012-01-18 2013-08-01 Fuji Electric Co Ltd 半導体装置
JP5637154B2 (ja) * 2012-02-22 2014-12-10 トヨタ自動車株式会社 半導体装置
JP2013172087A (ja) * 2012-02-22 2013-09-02 Toyota Motor Corp 半導体装置
DE112012006068B8 (de) 2012-03-22 2020-03-19 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
DE112013004981B4 (de) * 2012-10-11 2024-05-29 Mitsubishi Electric Corporation Halbleiterbauteil und Verfahren zu dessen Herstellung
JP6089733B2 (ja) * 2013-01-30 2017-03-08 富士電機株式会社 半導体装置
US8836090B1 (en) * 2013-03-01 2014-09-16 Ixys Corporation Fast recovery switching diode with carrier storage area
JPWO2014155565A1 (ja) * 2013-03-27 2017-02-16 トヨタ自動車株式会社 縦型半導体装置
JP5876008B2 (ja) * 2013-06-03 2016-03-02 ルネサスエレクトロニクス株式会社 半導体装置
CN104332494B (zh) * 2013-07-22 2018-09-21 无锡华润上华科技有限公司 一种绝缘栅双极晶体管及其制造方法
JP6237064B2 (ja) * 2013-09-30 2017-11-29 サンケン電気株式会社 半導体装置
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
US10424635B2 (en) * 2016-04-06 2019-09-24 Littelfuse, Inc. High voltage semiconductor device with guard rings and method associated therewith
DE102016207117A1 (de) * 2016-04-27 2017-11-02 Robert Bosch Gmbh Leistungshalbleiterbauelement und Verfahren zur Herstellung des Leistungshalbleiterbauelements
JP6649198B2 (ja) * 2016-07-14 2020-02-19 トヨタ自動車株式会社 半導体装置とその製造方法
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur
JP2018148154A (ja) * 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体装置および電子機器
CN108511516A (zh) * 2018-06-04 2018-09-07 中山汉臣电子科技有限公司 一种具有新型终端结构的功率半导体器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4024728A1 (de) * 1989-08-03 1991-02-07 Fuji Electric Co Ltd Mos-halbleitereinrichtung und verfahren zu ihrer herstellung
JPH07326744A (ja) * 1994-05-31 1995-12-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH09186315A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd 半導体装置
JPH11145466A (ja) * 1997-11-13 1999-05-28 Fuji Electric Co Ltd Ｍｏｓ型半導体素子

Family Cites Families (8)

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JPS6211272A (ja) 1985-07-09 1987-01-20 Toshiba Corp 高耐圧プレ−ナ型半導体装置
US5629552A (en) * 1995-01-17 1997-05-13 Ixys Corporation Stable high voltage semiconductor device structure
JPH08306911A (ja) 1995-04-28 1996-11-22 Sanyo Electric Co Ltd 半導体装置とその製造方法
KR0175277B1 (ko) * 1996-02-29 1999-02-01 김광호 중첩된 필드플레이트구조를 갖는 전력반도체장치 및 그의 제조방법
JP3850146B2 (ja) 1998-07-07 2006-11-29 三菱電機株式会社 分離構造とその分離構造を備える半導体装置
JP2000269520A (ja) 1999-03-15 2000-09-29 Toshiba Corp 高耐圧型半導体装置
JP4797225B2 (ja) 1999-05-27 2011-10-19 富士電機株式会社 半導体装置
JP3776666B2 (ja) 2000-02-25 2006-05-17 沖電気工業株式会社 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4024728A1 (de) * 1989-08-03 1991-02-07 Fuji Electric Co Ltd Mos-halbleitereinrichtung und verfahren zu ihrer herstellung
JPH07326744A (ja) * 1994-05-31 1995-12-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH09186315A (ja) * 1995-12-28 1997-07-15 Hitachi Ltd 半導体装置
JPH11145466A (ja) * 1997-11-13 1999-05-28 Fuji Electric Co Ltd Ｍｏｓ型半導体素子

Also Published As

Publication number Publication date
US20030218220A1 (en) 2003-11-27
DE10362232B4 (de) 2011-06-30
JP2003347547A (ja) 2003-12-05
DE10302628A1 (de) 2003-12-18
DE10302628B4 (de) 2012-03-08
US6888206B2 (en) 2005-05-03

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