JP6089733B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6089733B2 JP6089733B2 JP2013015971A JP2013015971A JP6089733B2 JP 6089733 B2 JP6089733 B2 JP 6089733B2 JP 2013015971 A JP2013015971 A JP 2013015971A JP 2013015971 A JP2013015971 A JP 2013015971A JP 6089733 B2 JP6089733 B2 JP 6089733B2
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000010410 layer Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 23
- 230000015556 catabolic process Effects 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000011084 recovery Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 8
- 108091006146 Channels Proteins 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Description
この発明の目的は、前記の課題を解決して、オン時に導通領域を広げてオン電圧を低下させることができる半導体装置を提供することである。
(実施の形態1)
図1および図2は、この発明の実施の形態1に係る半導体装置100の構成図であり、図1(a)は要部平面図、図1(b)は図1(a)のX−X線で切断した要部断面図、図2は図1(b)のF部拡大図である。この半導体装置100は電力用ダイオードであり、縦型のダイオード100aである。
図3および図4は、図1のダイオード100aの動作を説明する図であり、図3(a)はオン状態の図、図3(b)はオフ状態移行時の図、図3(c)はオフ状態の図であり、図4は、図1のダイオード100aの動作波形図である。図3および図4を用いて動作を説明する。
この逆電圧VRの印加により、pアノード領域2とnドリフト領域1aのpn接合からnドリフト領域1aに縦方向と横方向に空乏層17が広がる。横方向に広がった空乏層17aはpガードリング領域3を構成するp+領域3aに達すると、p+領域3aを跳び越して次々と横方向へ広がる。このように、横方向に伸びた空乏層17aの幅は広くなるため、表面での電界強度は小さくなり、表面での耐圧は安定して維持される。
1a nドリフト領域
2 pアノード領域
3 pガードリング領域
3a p+領域
4 絶縁膜
5 プレート電極
6 nカソード領域
7 アノード電極
8 カソード電極
9 チャネルストッパー領域
11 活性領域
12 反転層
13 正孔
14 電子
15 通電領域
16 耐圧構造
17 空乏層
17a 横方向に広がる空乏層
18 ショットキー接合
100,200,300,400 半導体装置
100a 本発明のダイオード(電力用ダイオード)
500 従来のダイオード(電力用ダイオード)
A アノード端子
K カソード端子
G プレート端子
IA アノード電流
IAF 順電流
IAR 逆電流
IRR 逆回復電流
VR 逆電圧
GND グランド電位
Claims (4)
- 第1導電型の半導体基板の表面層に配置される第2導電型の第1半導体領域と、該第1半導体領域を取り囲んで配置される耐圧構造である第2導電型のガードリング領域と、前記第1半導体領域の端部上から前記ガードリング領域に延在する絶縁膜と、前記第1半導体領域の端部と前記ガードリング領域の端部間に挟まれた前記半導体基板上と前記ガードリング領域上に前記絶縁膜を介して配置される導電膜と、前記第1半導体領域上に配置され、前記導電膜と離して配置される主電極と、を備え、
オン時に半導体基板の表面層に反転層が形成される電圧を前記導電膜に印加し、オフ時に前記反転層が消滅する電圧を前記導電膜に印加することを特徴とする半導体装置。 - 前記ガードリング領域が複数で高濃度の第2導電型の第2半導体領域からなり、前記導電膜がリング状に分割され、該分割されたリング状の導電膜が前記第1半導体領域と前記ガードリング領域の間に挟まれた前記半導体基板上、隣接する前記第2半導体領域の間に挟まれた前記半導体基板上の前記絶縁膜を介してそれぞれ配置されることを特徴とする請求項1に記載の半導体装置。
- 前記半導体基板の一部が前記主電極とショットキー接合を形成することを特徴とする請求項1または2に記載の半導体装置。
- 前記半導体基板がn型半導体基板であり、前記第1半導体領域がp型アノード領域であり、前記ガードリング領域がp型ガードリング領域であり、前記第2半導体領域が高濃度のp型領域であり、前記導電膜がプレート電極であることを特徴とする請求項1〜3のいずれか一項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013015971A JP6089733B2 (ja) | 2013-01-30 | 2013-01-30 | 半導体装置 |
US14/154,778 US9443942B2 (en) | 2013-01-30 | 2014-01-14 | Semiconductor device |
Applications Claiming Priority (1)
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JP2013015971A JP6089733B2 (ja) | 2013-01-30 | 2013-01-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2014146765A JP2014146765A (ja) | 2014-08-14 |
JP6089733B2 true JP6089733B2 (ja) | 2017-03-08 |
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JP2013015971A Expired - Fee Related JP6089733B2 (ja) | 2013-01-30 | 2013-01-30 | 半導体装置 |
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US (1) | US9443942B2 (ja) |
JP (1) | JP6089733B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015032627A (ja) * | 2013-07-31 | 2015-02-16 | 株式会社東芝 | 半導体装置 |
DE102016207117A1 (de) * | 2016-04-27 | 2017-11-02 | Robert Bosch Gmbh | Leistungshalbleiterbauelement und Verfahren zur Herstellung des Leistungshalbleiterbauelements |
US10784382B2 (en) * | 2017-10-11 | 2020-09-22 | Duet Microelectronics Inc. | Isolation PIN diode structure |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4009483A (en) * | 1974-04-04 | 1977-02-22 | Motorola, Inc. | Implementation of surface sensitive semiconductor devices |
JPS57160159A (en) * | 1981-03-28 | 1982-10-02 | Toshiba Corp | High breakdown voltage planar type semiconductor device |
JPH04127540A (ja) * | 1990-09-19 | 1992-04-28 | Nec Corp | 絶縁ゲート電界効果トランジスタ |
JP3232763B2 (ja) | 1992-04-17 | 2001-11-26 | 富士電機株式会社 | 半導体装置、およびその駆動方法 |
US5477077A (en) | 1992-04-17 | 1995-12-19 | Fuji Electric Co., Ltd. | Semiconductor device and a method for the manufacture thereof |
JP2812093B2 (ja) * | 1992-09-17 | 1998-10-15 | 株式会社日立製作所 | プレーナ接合を有する半導体装置 |
JP3417013B2 (ja) * | 1993-10-18 | 2003-06-16 | 株式会社デンソー | 絶縁ゲート型バイポーラトランジスタ |
JP4054155B2 (ja) * | 2000-02-01 | 2008-02-27 | 三菱電機株式会社 | 半導体装置 |
KR100535062B1 (ko) * | 2001-06-04 | 2005-12-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 고내압 반도체장치 |
JP2003347547A (ja) * | 2002-05-27 | 2003-12-05 | Mitsubishi Electric Corp | 電力用半導体装置及びその製造方法 |
JP4469584B2 (ja) * | 2003-09-12 | 2010-05-26 | 株式会社東芝 | 半導体装置 |
JP4189415B2 (ja) * | 2006-06-30 | 2008-12-03 | 株式会社東芝 | 半導体装置 |
JP2008251772A (ja) * | 2007-03-30 | 2008-10-16 | Toshiba Corp | 半導体装置 |
JP5381420B2 (ja) * | 2008-07-22 | 2014-01-08 | 富士電機株式会社 | 半導体装置 |
JP5224289B2 (ja) * | 2009-05-12 | 2013-07-03 | 三菱電機株式会社 | 半導体装置 |
US9117739B2 (en) * | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
WO2013046908A1 (ja) * | 2011-09-28 | 2013-04-04 | 三菱電機株式会社 | 半導体装置 |
-
2013
- 2013-01-30 JP JP2013015971A patent/JP6089733B2/ja not_active Expired - Fee Related
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2014
- 2014-01-14 US US14/154,778 patent/US9443942B2/en active Active
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US20140210037A1 (en) | 2014-07-31 |
US9443942B2 (en) | 2016-09-13 |
JP2014146765A (ja) | 2014-08-14 |
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