JPWO2016114138A1 - 半導体装置 - Google Patents
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- 238000000605 extraction Methods 0.000 claims abstract description 100
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- 229910052796 boron Inorganic materials 0.000 claims description 8
- -1 helium ions Chemical class 0.000 claims description 4
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- 239000001307 helium Substances 0.000 claims description 3
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- 238000005468 ion implantation Methods 0.000 description 6
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
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- 229910017931 Cu—Si Inorganic materials 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明の一実施形態に係る半導体装置は、図3に示すように、第1導電型(n−型)のドリフト層1を例えば単結晶シリコンからなる半導体基板で構成している。
B>A ……(1)
とする構成になっている。
B≧A×3 ……(2)
とする構成になっている。
次に、一実施形態に係る半導体装置の動作について、図4及び従来の半導体装置を示す図10を参照して説明する。
次に、引き抜き領域4の具体的な構成について、主に図5乃至図7及び図10を参照しながら説明する。
3…アノード領域
4…引き抜き領域
4a…外側曲面部,4b…内側曲面部
4x…角部
4x1…外側端,4x2…内側端
4r1,4r2…曲率半径
4rp1,4rp2…中心
6j,6j+1,6j+2…FLR領域
7…ウエル領域
8…Heイオンの照射領域
10…絶縁膜,10a…端部
10ax…角部
10r…曲率半径
10rp…中心
11…コンタクト孔
11j,11j+1,11j+2…FLRコンタクト孔
12…アノード電極
12a…オーミック接続部分
12b…引出部分
13j,13j+1,13j+2…FLR電極
14…ウエル電極
15…カソード領域
16…カソード電極
Claims (16)
- 第1導電型のドリフト層と、
前記ドリフト層の上部に設けられた第2導電型のアノード領域と、
前記アノード領域を取り囲む位置に前記アノード領域と接して設けられた第2導電型の引き抜き領域と、
前記ドリフト層の上部において、前記引き抜き領域を取り囲む位置に前記引き抜き領域から離間して設けられた第2導電型のフィールドリミッティングリング領域と、
を備え、
前記引き抜き領域は、前記アノード領域及び前記フィールドリミッティングリング領域よりも深く構成されていることを特徴とする半導体装置。 - 前記ドリフト層の下部に設けられたカソード領域を更に備えることを特徴とする請求項1に記載の半導体装置。
- 前記ドリフト層の上に設けられた絶縁膜と、
前記絶縁膜を貫通するコンタクト孔を介して前記アノード領域とオーミック接続されたオーミック接続部分及び前記オーミック接続部分から前記絶縁膜上に引き出された引出部分とを有するアノード電極と、
を更に備え、
前記引き抜き領域は、前記アノード電極の前記引出部分の直下に配置されていることを特徴とする請求項1又は請求項2に記載の半導体装置。 - 前記引き抜き領域は、前記オーミック接続部分及び前記引出部分に亘って設けられ、かつ前記オーミック接続部分に接続されていることを特徴とする請求項3に記載の半導体装置。
- 前記引き抜き領域の深さは、10μm乃至30μmであることを特徴とする請求項4に記載の半導体装置。
- 前記引き抜き領域の外側曲面部から前記オーミック接続部分の外周端までの距離をAとし、前記オーミック接続部分の外周端から前記引き抜き領域の内側曲面部までの距離をBとしたとき、B>Aであることを特徴とする請求項4に記載の半導体装置。
- B≧A×3であることを特徴とする請求項6に記載の半導体装置。
- 前記引き抜き領域と前記アノード電極との間の前記絶縁膜の端部は、円弧形状の角部を有する方形状平面パターンで構成され、
前記引き抜き領域は、角部を有する額縁状平面パターンで構成され、
前記引き抜き領域の角部での外側端は、前記絶縁膜の端部の角部での曲率半径の中心よりも中心が内方に位置する曲率半径の円弧形状になっていることを特徴とする請求項4に記載の半導体装置。 - 前記引き抜き領域の角部での外側端の曲率半径は、前記絶縁膜の端部の角部での曲率半径よりも大きいことを特徴とする請求項8に記載の半導体装置。
- 前記引き抜き領域の角部での内側端は、前記絶縁膜の端部の角部での曲率半径の中心よりも中心が内方に位置する曲率半径の円弧形状になっていることを特徴とする請求項8に記載の半導体装置。
- 前記引き抜き領域の角部での内側端の曲率半径は、前記絶縁膜の端部の角部での曲率半径よりも大きいことを特徴とする請求項10に記載の半導体装置。
- 第1導電型のドリフト層と、
前記ドリフト層の上部に設けられた第2導電型のアノード領域と、
前記ドリフト層の上部において前記アノード領域を取り囲む位置に前記アノード領域と接して設けられた第2導電型の引き抜き領域と、
前記ドリフト層の上に設けられた絶縁膜と、
前記絶縁膜を貫通するコンタクト孔を介して前記アノード領域とオーミック接続されたオーミック接続部分及び前記オーミック接続部分から前記絶縁膜上に引き出された引出部分を有するアノード電極と、
を備え、
前記引き抜き領域は、前記アノード領域よりも深く構成され、かつ前記アノード電極の前記オーミック接続部分及び前記引出部分に亘って設けられ、
前記引き抜き領域の外側曲面部から前記オーミック接続部分の外周端までの距離をAとし、前記オーミック接続部分の外周端から前記引き抜き領域の内側曲面部までの距離をBとしたとき、B>Aであることを特徴とする半導体装置。 - B≧A×3であることを特徴とする請求項12に記載の半導体装置。
- 前記引き抜き領域の深さの80%〜120%の範囲に位置するように、前記引き抜き領域と前記ドリフト層との境界部分にヘリウムイオンの照射領域が設けられていることを特徴とする請求項1、2、12、13のいずれか1項に記載の半導体装置。
- 前記照射領域は、前記引き抜き領域の長さの90%〜110%の範囲に位置することを特徴とする請求項14に記載の半導体装置。
- 前記ヘリウムイオン照射のドーズ量は、5×1011/cm2以下であることを特徴とする請求項14に記載の半導体装置。
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JP2005093550A (ja) * | 2003-09-12 | 2005-04-07 | Toshiba Corp | 半導体装置 |
JP2012165013A (ja) * | 2012-04-26 | 2012-08-30 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
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JPH10284718A (ja) * | 1997-04-08 | 1998-10-23 | Fuji Electric Co Ltd | 絶縁ゲート型サイリスタ |
JP4017258B2 (ja) * | 1998-07-29 | 2007-12-05 | 三菱電機株式会社 | 半導体装置 |
JP2005340528A (ja) * | 2004-05-27 | 2005-12-08 | Fuji Electric Device Technology Co Ltd | 半導体装置およびその製造方法 |
JP4803211B2 (ja) | 2008-05-27 | 2011-10-26 | トヨタ自動車株式会社 | 半導体装置 |
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JP5640969B2 (ja) * | 2011-12-26 | 2014-12-17 | 三菱電機株式会社 | 半導体素子 |
JP6107156B2 (ja) | 2012-05-21 | 2017-04-05 | 富士電機株式会社 | 半導体装置 |
DE112012007207B4 (de) * | 2012-12-06 | 2023-11-09 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
JP6003672B2 (ja) | 2013-01-23 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置 |
JP2014241367A (ja) * | 2013-06-12 | 2014-12-25 | 三菱電機株式会社 | 半導体素子、半導体素子の製造方法 |
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JP2005093550A (ja) * | 2003-09-12 | 2005-04-07 | Toshiba Corp | 半導体装置 |
JP2012165013A (ja) * | 2012-04-26 | 2012-08-30 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
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JP6673439B2 (ja) | 2020-03-25 |
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