JP6107156B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6107156B2 JP6107156B2 JP2013006206A JP2013006206A JP6107156B2 JP 6107156 B2 JP6107156 B2 JP 6107156B2 JP 2013006206 A JP2013006206 A JP 2013006206A JP 2013006206 A JP2013006206 A JP 2013006206A JP 6107156 B2 JP6107156 B2 JP 6107156B2
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 238000009792 diffusion process Methods 0.000 claims description 171
- 230000002093 peripheral effect Effects 0.000 claims description 138
- 230000002441 reversible effect Effects 0.000 claims description 63
- 238000011084 recovery Methods 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 54
- 239000010410 layer Substances 0.000 claims description 53
- 239000002344 surface layer Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 21
- 238000000926 separation method Methods 0.000 claims description 18
- 239000010408 film Substances 0.000 description 69
- 230000015556 catabolic process Effects 0.000 description 21
- 239000000969 carrier Substances 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 18
- 230000002829 reductive effect Effects 0.000 description 13
- 230000005684 electric field Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- -1 Phospho Chemical class 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
1−1 p型環状領域
1a,1b,8,120 外周端
2,19,108 周辺部
3,109 絶縁膜
3a 絶縁膜
4 開口部
5 アノード分離電極、第一金属膜
5a アノード電極延長部
6 フィールドプレート、第二金属膜
7,103 アノード電極
10,101 n型ドリフト層
11 p型ベース領域
12 n型エミッタ領域
13 p+コンタクト領域
14 ゲート酸化膜
15 ゲート電極
16 エミッタ電極
17 p型コレクタ層、n型ドレイン層
18 コレクタ電極
20 トレンチ
21 層間絶縁膜
22 層間絶縁膜端部
30,107 活性領域
40,106 耐圧領域
50 p型環状拡散領域
51 p型格子線部
52 正孔電流
60 梯子状延長部
60a 格子状外延部
70 p型アノード外延部
71 p型ベース外延部
100 コンバータ部
104 n型カソード拡散層
105 カソード電極
106−1 ガードリング構造
106−2 フィールドプレート構造
130 曲率部
200 ブレーキ部
300 インバータ部
301 IGBT
302 FWD
Claims (13)
- 第1導電型の半導体基板の一方の主面の表面層に矩形状平面パターンの第2導電型拡散領域と該第2導電型拡散領域を取り巻く環状の耐圧領域とを有し、
前記第2導電型拡散領域が、中央部表面で金属電極がオーミック接触する活性領域と、
該活性領域を取り巻き、表面に絶縁膜を備える環状の周辺部と、
該周辺部が、前記周辺部の内周端と外周端間のシート抵抗を高くするように選択的に拡散される第2導電型拡散領域延長部を有し、
前記周辺部の第2導電型拡散領域延長部が、前記内周端から前記外周端に向けてストライプ状に外延する複数の第2導電型外延部と、前記半導体基板の露出面からなる複数の第1導電型ストライプ状基板表面とが交互に並列配置される梯子状延長部を備え、
前記周辺部表面にオーミック接触し、前記金属電極とは電気的に離間する分離電極を備えることを特徴とする半導体装置。 - 前記第2導電型外延部の短辺幅/前記第1導電型ストライプ状基板表面の短辺幅が、0.1以上0.5以下であることを特徴とする請求項1に記載の半導体装置。
- 前記第2導電型拡散領域の拡散深さをXjとし、前記第1導電型ストライプ状基板表面の短辺幅をLとしたとき、LはXjの1.6倍よりも長いことを特徴とする請求項1または2に記載の半導体装置。
- 前記周辺部の表面を覆う絶縁膜を備えていることを特徴とする請求項1記載の半導体装置。
- 前記第2導電型外延部に接し、前記第2導電型拡散領域よりも深い拡散深さを有する第2導電型環状拡散領域が、前記梯子状延長部の外周側に相互に離間して配備されていることを特徴とする請求項1記載の半導体装置。
- 前記複数の第2導電型環状拡散領域の最内周端と前記第2導電型拡散領域の外周端との間隔が、前記第2導電型外延部の外周方向の長さ以上であることを特徴とする請求項5に記載の半導体装置。
- 前記第2導電型外延部と前記複数の第2導電型環状拡散領域の最内周端とが接することを特徴とする請求項5または6に記載の半導体装置。
- 前記梯子状延長部の外側に離間して配備される前記第2導電型環状拡散領域が表面に、前記第2導電型外延部の表面と電気的に接続する前記分離電極を備えていることを特徴とする請求項5に記載の半導体装置。
- 第1導電型の半導体基板の一方の主面の表面層に矩形状平面パターンの第2導電型拡散領域と該第2導電型拡散領域を取り巻く環状の耐圧領域とを有し、
前記第2導電型拡散領域が、中央部表面で金属電極がオーミック接触する活性領域と、
該活性領域を取り巻き、表面に絶縁膜を備える環状の周辺部と、
該周辺部が、前記周辺部の内周端と外周端間のシート抵抗を高くするように選択的に拡散される第2導電型拡散領域延長部を有し、
前記周辺部表面の前記絶縁膜の活性領域側における内周端形状が、前記周辺部を経路とする逆回復電流の前記内周端での平面分布に対応して電流の多い部分で活性領域側への張り出し距離が長く、少ない部分で前記張り出し距離が短い非直線形状にされていることを特徴とする半導体装置。 - 前記第2導電型拡散領域延長部が、矩形をなす前記半導体装置の中心から前記半導体装置の外周端に向かう方向に対して0°よりも大きく90°よりも小さい角度θをなす複数の第1の第2導電型格子線部と、前記中心から前記半導体装置の外周端に向かう方向に対して角度−θをなす複数の第2の第2導電型格子線部とを有し、前記第1の第2導電型格子線部と前記第2の第2導電型格子線部とが角度2θにて交差していることを特徴とする請求項9に記載の半導体装置。
- 前記第2導電型拡散領域がアノード拡散領域であり、前記第1導電型半導体基板の他方の主面の表面層に前記第1導電型半導体基板よりも高濃度の第1導電型カソード拡散領域を有することにより、前記半導体装置が縦型ダイオードの機能を有することを特徴とする請求項9に記載の半導体装置。
- 前記第2導電型拡散領域が、前記第1導電型半導体基板の一方の主面の表面層に選択的に形成された第2導電型ベース領域であり、該ベース層の表面に第1導電型ソース領域が選択的に形成され、ゲート絶縁膜を介して前記第1導電型半導体基板、前記ベース領域、および前記ソース領域の表面にそれぞれ対向するようにゲート電極が形成され、前記第1導電型半導体基板の他方の主面の表面層に前記第1導電型半導体基板よりも高濃度の第1導電型ドレイン層を有することにより、前記半導体装置がMOSFETの機能を有することを特徴とする請求項1または9に記載の半導体装置。
- 前記第2導電型拡散領域が、前記第1導電型半導体基板の一方の主面の表面層に選択的に形成された第2導電型ベース領域であり、該ベース領域の表面に第1導電型エミッタ領域が選択的に形成され、ゲート絶縁膜を介して前記第1導電型半導体基板、前記ベース領域、および前記エミッタ領域の表面にそれぞれ対向するようにゲート電極が形成され、前記第1導電型半導体基板の他方の主面の表面層に前記第1導電型半導体基板よりも高濃度の第2導電型コレクタ層を有することにより、前記半導体装置がIGBTの機能を有することを特徴とする請求項1または9に記載の半導体装置。
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