JP4635067B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP4635067B2 JP4635067B2 JP2008076588A JP2008076588A JP4635067B2 JP 4635067 B2 JP4635067 B2 JP 4635067B2 JP 2008076588 A JP2008076588 A JP 2008076588A JP 2008076588 A JP2008076588 A JP 2008076588A JP 4635067 B2 JP4635067 B2 JP 4635067B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- semiconductor pillar
- semiconductor
- termination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 162
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000012535 impurity Substances 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 42
- 238000009826 distribution Methods 0.000 claims description 24
- 230000007423 decrease Effects 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 11
- 230000015556 catabolic process Effects 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (5)
- 相互に対向する上面及び下面を有する第1導電型の半導体基板と、
前記半導体基板上に第1導電型の第1半導体ピラー領域と第2導電型の第2半導体ピラー領域とを交互に設けてなるスーパージャンクション領域と
を備え、
素子領域の前記第1半導体ピラー領域及び前記第2半導体ピラー領域の形状は、前記半導体基板の上面に沿った断面において第1の方向を長手方向とするストライプ形状であり、
前記素子領域の外周部を囲う終端領域の前記第1半導体ピラー領域及び前記第2半導体ピラー領域の形状は、前記半導体基板の表面に平行に前記第1半導体ピラー領域及び前記第2半導体ピラー領域が交互に積層された形状であり、
前記終端領域のコーナー部の前記第1半導体ピラー領域及び前記第2半導体ピラー領域の不純物濃度分布は、前記コーナー部と前記素子領域とが接する点を中心とした円弧曲線に沿って周期的に複数の不純物濃度ピークが与えられた分布であり、
前記終端領域のコーナー部の前記第1半導体ピラー領域及び前記第2半導体ピラー領域の不純物量は、前記コーナー部の外周に向かうにしたがい低くなる
ことを特徴とする半導体装置。 - 前記終端領域の前記第1半導体ピラー領域の不純物濃度は前記素子領域の前記第1半導体ピラー領域の不純物濃度よりも低く、
前記終端領域の前記第2半導体ピラー領域の不純物濃度は前記素子領域の前記第2半導体ピラー領域の不純物濃度よりも低いことを特徴とする請求項1記載の半導体装置。 - 前記終端領域の前記第1半導体ピラー領域の不純物濃度は、前記終端領域の前記第2半導体ピラー領域の不純物濃度と等しいことを特徴とする請求項1又は2に記載の半導体装置。
- 前記終端領域において交互に設けられた前記第1半導体ピラー領域及び前記第2半導体ピラー領域の一つの繰り返し単位の幅は、前記素子領域において交互に設けられた前記第1半導体ピラー領域及び前記第2半導体ピラー領域の一つの繰り返し単位の幅よりも小さいことを特徴とする請求項1乃至3のいずれか記載の半導体装置。
- 第1導電型の半導体基板上に設けられた第1のエピタキシャル層の素子領域及び前記素子領域の外周部を囲う終端領域の所定の位置へ第1導電型の不純物をイオン注入すると共に、前記第1のエピタキシャル層の前記素子領域の所定の位置へ第2導電型の不純物をイオン注入する第1の工程と、
前記第1のエピタキシャル層上に第2のエピタキシャル層を形成する第2の工程と、
前記第2のエピタキシャル層の前記素子領域の所定の位置へ第1導電型の不純物をイオン注入すると共に、前記第2のエピタキシャル層の前記素子領域及び前記終端領域の所定の位置へ第2導電型の不純物をイオン注入する第3の工程と、
前記第2のエピタキシャル層上に第3のエピタキシャル層を形成する第4の工程と、
前記第1の工程から前記第4の工程を所定回数繰り返した後、熱により前記第1導電型の不純物及び前記第2導電型の不純物を拡散して、前記半導体基板上に第1導電型の第1半導体ピラー領域と第2導電型の第2半導体ピラー領域とを交互に設けてなるスーパージャンクション領域を形成する工程と
を備え、
前記終端領域へイオン注入する際に、前記終端領域のコーナー部において前記素子領域から前記コーナー部の外周に向けて放射状に開口部が設けられたレジストを用いる
ことを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008076588A JP4635067B2 (ja) | 2008-03-24 | 2008-03-24 | 半導体装置及びその製造方法 |
US12/403,881 US7919824B2 (en) | 2008-03-24 | 2009-03-13 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008076588A JP4635067B2 (ja) | 2008-03-24 | 2008-03-24 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009231622A JP2009231622A (ja) | 2009-10-08 |
JP4635067B2 true JP4635067B2 (ja) | 2011-02-16 |
Family
ID=41088026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008076588A Expired - Fee Related JP4635067B2 (ja) | 2008-03-24 | 2008-03-24 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7919824B2 (ja) |
JP (1) | JP4635067B2 (ja) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5298488B2 (ja) | 2007-09-28 | 2013-09-25 | 富士電機株式会社 | 半導体装置 |
WO2010067430A1 (ja) * | 2008-12-10 | 2010-06-17 | トヨタ自動車株式会社 | 半導体装置 |
JP5328931B2 (ja) * | 2008-12-24 | 2013-10-30 | サン−ゴバン クリストー エ デテクトゥール | 低欠陥密度の自立窒化ガリウム基板の製法およびそれにより製造されたデバイス |
JP5543758B2 (ja) | 2009-11-19 | 2014-07-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10103240B2 (en) * | 2010-04-30 | 2018-10-16 | Alpha And Omega Semiconductor Incorporated | Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode |
JP4500892B1 (ja) * | 2010-02-17 | 2010-07-14 | 株式会社三社電機製作所 | Pinダイオード |
US8476698B2 (en) * | 2010-02-19 | 2013-07-02 | Alpha And Omega Semiconductor Incorporated | Corner layout for superjunction device |
JP2012074441A (ja) | 2010-09-28 | 2012-04-12 | Toshiba Corp | 電力用半導体装置 |
JP5664142B2 (ja) * | 2010-11-09 | 2015-02-04 | 富士電機株式会社 | 半導体装置 |
US8278711B2 (en) | 2010-11-23 | 2012-10-02 | General Electric Company | Semiconductor device and method of making the same |
JP5719167B2 (ja) | 2010-12-28 | 2015-05-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
CN105789271B (zh) | 2011-09-27 | 2019-01-01 | 株式会社电装 | 半导体器件 |
KR20130040383A (ko) * | 2011-10-14 | 2013-04-24 | 주식회사 동부하이텍 | 고전압 트랜지스터 및 그의 제조방법 |
JP6107156B2 (ja) * | 2012-05-21 | 2017-04-05 | 富士電機株式会社 | 半導体装置 |
US9515137B2 (en) * | 2013-02-21 | 2016-12-06 | Infineon Technologies Austria Ag | Super junction semiconductor device with a nominal breakdown voltage in a cell area |
CN104347403B (zh) * | 2013-07-31 | 2017-11-14 | 无锡华润上华科技有限公司 | 一种绝缘栅双极性晶体管的制造方法 |
US9306034B2 (en) * | 2014-02-24 | 2016-04-05 | Vanguard International Semiconductor Corporation | Method and apparatus for power device with multiple doped regions |
KR101982362B1 (ko) * | 2014-07-18 | 2019-08-29 | 매그나칩 반도체 유한회사 | 초접합 반도체 소자 |
EP3183754A4 (en) * | 2014-08-19 | 2018-05-02 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
CN104332489A (zh) * | 2014-10-23 | 2015-02-04 | 吉林华微电子股份有限公司 | 半导体器件的具有表面超级结结构的终端 |
CN104617160B (zh) * | 2015-01-28 | 2017-07-11 | 工业和信息化部电子第五研究所 | 肖特基二极管及其制造方法 |
KR102404114B1 (ko) * | 2015-08-20 | 2022-05-30 | 온세미컨덕터코리아 주식회사 | 슈퍼정션 반도체 장치 및 그 제조 방법 |
US10186573B2 (en) * | 2015-09-14 | 2019-01-22 | Maxpower Semiconductor, Inc. | Lateral power MOSFET with non-horizontal RESURF structure |
US9806186B2 (en) * | 2015-10-02 | 2017-10-31 | D3 Semiconductor LLC | Termination region architecture for vertical power transistors |
CN108463885A (zh) | 2015-12-11 | 2018-08-28 | 罗姆股份有限公司 | 半导体装置 |
JP7018394B2 (ja) * | 2016-08-19 | 2022-02-10 | ローム株式会社 | 半導体装置 |
US10355132B2 (en) * | 2017-03-20 | 2019-07-16 | North Carolina State University | Power MOSFETs with superior high frequency figure-of-merit |
CN108091684B (zh) * | 2017-12-13 | 2020-12-22 | 车智路数据管理有限公司 | 超结金属氧化物场效应晶体管 |
CN108336130B (zh) * | 2018-02-13 | 2021-08-24 | 天津中科先进技术研究院有限公司 | 一种半导体功率器件及其制作方法 |
CN108376713B (zh) * | 2018-02-13 | 2021-01-15 | 汇佳网(天津)科技有限公司 | 一种具有超结结构的半导体器件及其制作方法 |
CN109585533A (zh) * | 2018-12-10 | 2019-04-05 | 泉州臻美智能科技有限公司 | 一种功率器件终端结构及其制作方法 |
CN110137245B (zh) * | 2019-04-30 | 2022-09-23 | 上海功成半导体科技有限公司 | 超结器件结构及其制备方法 |
CN113078206A (zh) * | 2021-03-30 | 2021-07-06 | 电子科技大学 | 一种功率半导体器件 |
CN115602709B (zh) * | 2022-10-24 | 2023-12-19 | 上海功成半导体科技有限公司 | 一种超结器件终端保护的版图结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001298190A (ja) * | 2000-02-09 | 2001-10-26 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP2002343967A (ja) * | 2001-05-14 | 2002-11-29 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2003224276A (ja) * | 2002-01-30 | 2003-08-08 | Toyota Central Res & Dev Lab Inc | 半導体装置及びその製造方法 |
JP2003258252A (ja) * | 2001-12-27 | 2003-09-12 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6995426B2 (en) * | 2001-12-27 | 2006-02-07 | Kabushiki Kaisha Toshiba | Semiconductor device having vertical metal insulator semiconductor transistors having plural spatially overlapping regions of different conductivity type |
-
2008
- 2008-03-24 JP JP2008076588A patent/JP4635067B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-13 US US12/403,881 patent/US7919824B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001298190A (ja) * | 2000-02-09 | 2001-10-26 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP2002343967A (ja) * | 2001-05-14 | 2002-11-29 | Toyota Central Res & Dev Lab Inc | 半導体装置 |
JP2003258252A (ja) * | 2001-12-27 | 2003-09-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2003224276A (ja) * | 2002-01-30 | 2003-08-08 | Toyota Central Res & Dev Lab Inc | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7919824B2 (en) | 2011-04-05 |
JP2009231622A (ja) | 2009-10-08 |
US20090236697A1 (en) | 2009-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4635067B2 (ja) | 半導体装置及びその製造方法 | |
JP5198030B2 (ja) | 半導体素子 | |
JP5002148B2 (ja) | 半導体装置 | |
JP4996848B2 (ja) | 半導体装置 | |
JP5462020B2 (ja) | 電力用半導体素子 | |
US8748982B2 (en) | High breakdown voltage semiconductor device | |
JP5537996B2 (ja) | 半導体装置 | |
JP2006278826A (ja) | 半導体素子及びその製造方法 | |
JP2007173418A (ja) | 半導体装置 | |
JP2008004643A (ja) | 半導体装置 | |
JP2008182054A (ja) | 半導体装置 | |
JP2008117826A (ja) | 電力用半導体素子 | |
JP2007281034A (ja) | 電力用半導体素子 | |
JP2006269720A (ja) | 半導体素子及びその製造方法 | |
JP2008294214A (ja) | 半導体装置 | |
JP2006179598A (ja) | 電力用半導体装置 | |
JP2009088345A (ja) | 半導体装置 | |
JP2010056510A (ja) | 半導体装置 | |
JP2009272397A (ja) | 半導体装置 | |
JP7505217B2 (ja) | 超接合半導体装置および超接合半導体装置の製造方法 | |
JP2010153622A (ja) | 半導体素子 | |
US9123549B2 (en) | Semiconductor device | |
JP2010016309A (ja) | 半導体装置 | |
US10707301B2 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP2011243915A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100215 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100707 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100713 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100902 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101026 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101119 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131126 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |