DE60239445D1 - Halbleiterlaserstruktur - Google Patents
HalbleiterlaserstrukturInfo
- Publication number
- DE60239445D1 DE60239445D1 DE60239445T DE60239445T DE60239445D1 DE 60239445 D1 DE60239445 D1 DE 60239445D1 DE 60239445 T DE60239445 T DE 60239445T DE 60239445 T DE60239445 T DE 60239445T DE 60239445 D1 DE60239445 D1 DE 60239445D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser structure
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/024,417 US6724013B2 (en) | 2001-12-21 | 2001-12-21 | Edge-emitting nitride-based laser diode with p-n tunnel junction current injection |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60239445D1 true DE60239445D1 (de) | 2011-04-28 |
Family
ID=21820485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60239445T Expired - Lifetime DE60239445D1 (de) | 2001-12-21 | 2002-12-17 | Halbleiterlaserstruktur |
Country Status (5)
Country | Link |
---|---|
US (1) | US6724013B2 (de) |
EP (1) | EP1328050B1 (de) |
JP (3) | JP2003198045A (de) |
BR (1) | BR0207606B1 (de) |
DE (1) | DE60239445D1 (de) |
Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878975B2 (en) * | 2002-02-08 | 2005-04-12 | Agilent Technologies, Inc. | Polarization field enhanced tunnel structures |
JP2004014725A (ja) * | 2002-06-06 | 2004-01-15 | Toyoda Gosei Co Ltd | 半導体発光素子 |
CN1324772C (zh) * | 2002-06-19 | 2007-07-04 | 日本电信电话株式会社 | 半导体发光器件 |
DE10261675B4 (de) * | 2002-12-31 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht |
US7521854B2 (en) * | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Patterned light emitting devices and extraction efficiencies related to the same |
US7211831B2 (en) * | 2003-04-15 | 2007-05-01 | Luminus Devices, Inc. | Light emitting device with patterned surfaces |
US7083993B2 (en) | 2003-04-15 | 2006-08-01 | Luminus Devices, Inc. | Methods of making multi-layer light emitting devices |
US6869812B1 (en) | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
US7123638B2 (en) * | 2003-10-17 | 2006-10-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Tunnel-junction structure incorporating N-type layer comprising nitrogen and a group VI dopant |
JP2005203520A (ja) * | 2004-01-14 | 2005-07-28 | Sumitomo Electric Ind Ltd | 半導体発光素子 |
US7250635B2 (en) * | 2004-02-06 | 2007-07-31 | Dicon Fiberoptics, Inc. | Light emitting system with high extraction efficency |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
WO2005086243A1 (en) * | 2004-03-08 | 2005-09-15 | Showa Denko K.K. | Pn junction type croup iii nitride semiconductor light-emitting device |
KR100568300B1 (ko) | 2004-03-31 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US20060255349A1 (en) * | 2004-05-11 | 2006-11-16 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
US7759149B2 (en) * | 2004-06-09 | 2010-07-20 | Showa Denko K.K. | Gallium nitride-based semiconductor stacked structure |
US7095052B2 (en) * | 2004-10-22 | 2006-08-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Method and structure for improved LED light output |
US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
KR100765004B1 (ko) * | 2004-12-23 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
JP5273516B2 (ja) * | 2005-03-23 | 2013-08-28 | 日本電気株式会社 | トンネル接合発光素子 |
US20070029541A1 (en) * | 2005-08-04 | 2007-02-08 | Huoping Xin | High efficiency light emitting device |
US7348603B2 (en) * | 2005-10-17 | 2008-03-25 | Luminus Devices, Inc. | Anisotropic collimation devices and related methods |
US7388233B2 (en) * | 2005-10-17 | 2008-06-17 | Luminus Devices, Inc. | Patchwork patterned devices and related methods |
US20070085098A1 (en) * | 2005-10-17 | 2007-04-19 | Luminus Devices, Inc. | Patterned devices and related methods |
US7391059B2 (en) * | 2005-10-17 | 2008-06-24 | Luminus Devices, Inc. | Isotropic collimation devices and related methods |
US8729580B2 (en) * | 2005-12-06 | 2014-05-20 | Toshiba Techno Center, Inc. | Light emitter with metal-oxide coating |
US7622746B1 (en) | 2006-03-17 | 2009-11-24 | Bridgelux, Inc. | Highly reflective mounting arrangement for LEDs |
WO2007136097A1 (ja) * | 2006-05-23 | 2007-11-29 | Meijo University | 半導体発光素子 |
JP2008130877A (ja) * | 2006-11-22 | 2008-06-05 | Sharp Corp | 窒化物半導体発光素子の製造方法 |
US7612362B2 (en) | 2006-11-22 | 2009-11-03 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device |
JP5151139B2 (ja) * | 2006-12-19 | 2013-02-27 | 住友電気工業株式会社 | 半導体発光素子 |
JP2008198957A (ja) * | 2007-02-16 | 2008-08-28 | Hitachi Ltd | 半導体レーザ装置および光増幅装置 |
JP2008226906A (ja) * | 2007-03-08 | 2008-09-25 | Sharp Corp | 窒化物半導体発光素子 |
JP2009059918A (ja) * | 2007-08-31 | 2009-03-19 | Sumitomo Electric Ind Ltd | 光半導体デバイス |
JP5012370B2 (ja) * | 2007-09-27 | 2012-08-29 | 住友電気工業株式会社 | 半導体レーザ素子 |
JP5322453B2 (ja) * | 2008-02-07 | 2013-10-23 | キヤノン株式会社 | 3次元フォトニック結晶発光素子 |
US7856040B2 (en) * | 2008-09-24 | 2010-12-21 | Palo Alto Research Center Incorporated | Semiconductor light emitting devices with non-epitaxial upper cladding |
US8084763B2 (en) | 2008-10-31 | 2011-12-27 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
JP5093063B2 (ja) * | 2008-11-11 | 2012-12-05 | 住友電気工業株式会社 | 集積化半導体光素子及び半導体光装置 |
US8529698B2 (en) * | 2008-11-11 | 2013-09-10 | Arizona Board Of Regents For And On Behalf Of Arizona State University | Ingan columnar nano-heterostructures for solar cells |
DE102009015314B4 (de) * | 2009-03-27 | 2023-04-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaservorrichtung |
JP5310271B2 (ja) * | 2009-05-29 | 2013-10-09 | 住友電気工業株式会社 | 半導体レーザ素子 |
DE102009054564A1 (de) * | 2009-12-11 | 2011-06-16 | Osram Opto Semiconductors Gmbh | Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung |
US20110188528A1 (en) * | 2010-02-04 | 2011-08-04 | Ostendo Technologies, Inc. | High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters |
DE102010002966B4 (de) | 2010-03-17 | 2020-07-30 | Osram Opto Semiconductors Gmbh | Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung |
US8897329B2 (en) | 2010-09-20 | 2014-11-25 | Corning Incorporated | Group III nitride-based green-laser diodes and waveguide structures thereof |
JP5420515B2 (ja) * | 2010-10-21 | 2014-02-19 | シャープ株式会社 | 窒化物半導体発光素子 |
US8748919B2 (en) | 2011-04-28 | 2014-06-10 | Palo Alto Research Center Incorporated | Ultraviolet light emitting device incorporating optically absorbing layers |
US9450152B2 (en) * | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
DE102012111512B4 (de) * | 2012-11-28 | 2021-11-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterstreifenlaser |
KR20140131412A (ko) * | 2013-05-02 | 2014-11-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 주입 에너지 측정 방법 |
US10324037B2 (en) * | 2013-11-13 | 2019-06-18 | Gustav Hudson | Low energy laser spectroscopy LELS |
DE102014111058A1 (de) * | 2014-08-04 | 2016-02-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung |
CN104682195A (zh) * | 2015-02-13 | 2015-06-03 | 北京牡丹视源电子有限责任公司 | 一种具有隧道结结构的边发射半导体激光器及其制备方法 |
DE102015106722A1 (de) * | 2015-04-30 | 2016-11-03 | Osram Opto Semiconductors Gmbh | Kantenemittierender Halbleiterlaser mit Tunnelkontakt |
WO2017011387A1 (en) | 2015-07-10 | 2017-01-19 | The Regents Of The University Of California | Hybrid growth method for iii-nitride tunnel junction devices |
CN105977349B (zh) * | 2016-05-17 | 2018-05-04 | 东南大学 | 一种具有p-i-n隧道结的多有源区发光二极管 |
US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
WO2018204402A1 (en) | 2017-05-01 | 2018-11-08 | Ohio State Innovation Foundation | Tunnel junction ultraviolet light emitting diodes with enhanced light extraction efficiency |
US10454250B2 (en) | 2017-05-22 | 2019-10-22 | Lasertel Inc. | Thermal contact for semiconductors and related methods |
CN108988124B (zh) * | 2017-05-31 | 2020-05-19 | 中国科学院半导体研究所 | 一种用于微波振荡源的单片集成隧道结激光器 |
US10397027B2 (en) | 2017-09-26 | 2019-08-27 | International Business Machines Corporation | Continuous time linear equalizer |
US10355453B2 (en) | 2017-11-08 | 2019-07-16 | International Business Machines Corporation | Electro-optical device with lateral electron blocking layer |
JP7169613B2 (ja) * | 2017-11-10 | 2022-11-11 | 学校法人 名城大学 | 窒化物半導体発光素子の製造方法 |
JP7101470B2 (ja) * | 2017-12-05 | 2022-07-15 | 日機装株式会社 | 窒化物半導体発光素子 |
DE102018105208B4 (de) * | 2018-03-07 | 2022-05-19 | Otto-Von-Guericke-Universität Magdeburg | Halbleiterschichtenfolge und ein darauf basierendes Halbleiterbauelement |
FR3082053B1 (fr) * | 2018-05-29 | 2020-09-11 | Commissariat Energie Atomique | Procede de fabrication d’une diode electroluminescente de type gan |
US11764327B2 (en) * | 2018-06-13 | 2023-09-19 | King Abdullah University Of Science And Technology | Light emitting diode with a graded quantum barrier layer |
EP3837743A4 (de) | 2018-08-13 | 2022-05-18 | Leonardo Electronics US Inc. | Verwendung einer metallkern-leiterplatte (pcb) zur erzeugung eines ultraschmalen hochstrompulstreibers |
US11056854B2 (en) | 2018-08-14 | 2021-07-06 | Leonardo Electronics Us Inc. | Laser assembly and related methods |
US11228160B2 (en) * | 2018-11-15 | 2022-01-18 | Sharp Kabushiki Kaisha | AlGaInPAs-based semiconductor laser device and method for producing same |
US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
US20220294189A1 (en) * | 2019-04-04 | 2022-09-15 | Cornell University | Monolithically inverted iii-v laser diode realized using buried tunnel junction |
US11752571B1 (en) | 2019-06-07 | 2023-09-12 | Leonardo Electronics Us Inc. | Coherent beam coupler |
JP7302814B2 (ja) * | 2019-06-26 | 2023-07-04 | ウシオ電機株式会社 | 半導体発光素子 |
EP3767762B1 (de) * | 2019-07-14 | 2022-03-30 | Instytut Wysokich Cisnien Polskiej Akademii Nauk | Laserdiode mit verteilter rückkopplung und deren herstellungsverfahren |
US11909172B2 (en) * | 2020-01-08 | 2024-02-20 | Asahi Kasei Kabushiki Kaisha | Method for manufacturing optical device and optical device |
CN111613705A (zh) * | 2020-04-17 | 2020-09-01 | 南京航空航天大学 | 低维高亮绿光发射InGaN基异质结二极管及其制备方法 |
US12020930B2 (en) * | 2020-05-20 | 2024-06-25 | Asahi Kasei Kabushiki Kaisha | Nitride semiconductor element |
JP7526915B2 (ja) * | 2021-12-20 | 2024-08-02 | 日亜化学工業株式会社 | 発光素子 |
JP7526916B2 (ja) * | 2021-12-20 | 2024-08-02 | 日亜化学工業株式会社 | 発光素子 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166761A (en) | 1991-04-01 | 1992-11-24 | Midwest Research Institute | Tunnel junction multiple wavelength light-emitting diodes |
JPH0621572A (ja) * | 1992-07-02 | 1994-01-28 | Nec Corp | 半導体レーザ |
JPH0690063A (ja) * | 1992-07-20 | 1994-03-29 | Toyota Motor Corp | 半導体レーザー |
JPH0974243A (ja) * | 1995-09-04 | 1997-03-18 | Mitsubishi Electric Corp | 半導体レーザ |
JP2783210B2 (ja) * | 1995-09-04 | 1998-08-06 | 日本電気株式会社 | 面発光型ダイオード |
JP3464853B2 (ja) * | 1995-09-06 | 2003-11-10 | 株式会社東芝 | 半導体レーザ |
EP0772249B1 (de) * | 1995-11-06 | 2006-05-03 | Nichia Corporation | Halbleitervorrichtung aus einer Nitridverbindung |
US5796771A (en) * | 1996-08-19 | 1998-08-18 | The Regents Of The University Of California | Miniature self-pumped monolithically integrated solid state laser |
JPH10150219A (ja) * | 1996-11-15 | 1998-06-02 | Toyoda Gosei Co Ltd | 3族窒化物半導体レーザ素子 |
CN1297016C (zh) * | 1997-01-09 | 2007-01-24 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
JP3713118B2 (ja) * | 1997-03-04 | 2005-11-02 | ローム株式会社 | 半導体発光素子の製法 |
US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
US6233267B1 (en) * | 1998-01-21 | 2001-05-15 | Brown University Research Foundation | Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique |
JP4166885B2 (ja) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
US6233265B1 (en) * | 1998-07-31 | 2001-05-15 | Xerox Corporation | AlGaInN LED and laser diode structures for pure blue or green emission |
US6153894A (en) * | 1998-11-12 | 2000-11-28 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting device |
US6389051B1 (en) * | 1999-04-09 | 2002-05-14 | Xerox Corporation | Structure and method for asymmetric waveguide nitride laser diode |
JP4850324B2 (ja) * | 1999-07-16 | 2012-01-11 | アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド | 窒化物半導体素子および窒化物半導体レーザ素子 |
JP4024431B2 (ja) * | 1999-07-23 | 2007-12-19 | 株式会社東芝 | 双方向半導体発光素子及び光伝送装置 |
US6567443B2 (en) * | 1999-09-29 | 2003-05-20 | Xerox Corporation | Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes |
US6526082B1 (en) * | 2000-06-02 | 2003-02-25 | Lumileds Lighting U.S., Llc | P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction |
KR100384598B1 (ko) * | 2000-11-29 | 2003-05-22 | 주식회사 옵토웰 | 질화물반도체 수직공진 표면발광 레이저 |
US6526083B1 (en) * | 2001-10-09 | 2003-02-25 | Xerox Corporation | Two section blue laser diode with reduced output power droop |
-
2001
- 2001-12-21 US US10/024,417 patent/US6724013B2/en not_active Expired - Lifetime
-
2002
- 2002-12-17 EP EP02258687A patent/EP1328050B1/de not_active Expired - Lifetime
- 2002-12-17 DE DE60239445T patent/DE60239445D1/de not_active Expired - Lifetime
- 2002-12-20 BR BRPI0207606-3B1A patent/BR0207606B1/pt not_active IP Right Cessation
- 2002-12-24 JP JP2002371704A patent/JP2003198045A/ja not_active Withdrawn
-
2010
- 2010-08-03 JP JP2010174425A patent/JP2010251804A/ja not_active Withdrawn
-
2014
- 2014-07-04 JP JP2014138631A patent/JP2014207476A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1328050A3 (de) | 2005-01-05 |
EP1328050B1 (de) | 2011-03-16 |
BR0207606A (pt) | 2003-12-02 |
JP2010251804A (ja) | 2010-11-04 |
US6724013B2 (en) | 2004-04-20 |
JP2003198045A (ja) | 2003-07-11 |
EP1328050A2 (de) | 2003-07-16 |
JP2014207476A (ja) | 2014-10-30 |
BR0207606B1 (pt) | 2013-07-09 |
US20030116767A1 (en) | 2003-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60239445D1 (de) | Halbleiterlaserstruktur | |
DE60227232D1 (de) | Halbleiterlaserstruktur | |
DE60224273D1 (de) | Mehrstrahl-halbleiterlaserelement | |
DE60234590D1 (de) | Nitridhalbleiterlaser | |
DE60129991D1 (de) | Halbleiterlaserbauelement | |
DE60311095D1 (de) | Mehrstrahliger halbleiterlaser | |
DE60238291D1 (de) | Wafer-Haltevorrichtung | |
NO20042933L (no) | Vekselretter | |
DE60324962D1 (de) | Halbleiterlaseranordnung | |
DE10294771D2 (de) | Leistungshalbleitermodul | |
DE60227475D1 (de) | Halbleiterbauelement | |
DE60203842D1 (de) | Hauptträgerverbindung | |
DE60233774D1 (de) | Lasermikroskop | |
DE50213828D1 (de) | Lichtsensitives Halbleiterbauelement | |
DE60216842D1 (de) | Optisches Halbleitermodul | |
DE50306271D1 (de) | Halbleiterlaservorrichtung | |
DE60222724D1 (de) | Halbleiterlaserelement | |
DE10293997D2 (de) | Leistungshalbleitermodul | |
DE60123576D1 (de) | Halbleiterlaserherstellungsverfahren | |
DE60041742D1 (de) | Halbleiterlaser | |
DE60212902D1 (de) | Hochleistungshalbleiterdiodenlaser | |
DE60225790D1 (de) | Halbleiterbauelement | |
DE60229712D1 (de) | Halbleiterspeicher | |
DE50104634D1 (de) | Halbleiter-laser | |
ATA5612001A (de) | Halbleitermodul |