DE60212902D1 - Hochleistungshalbleiterdiodenlaser - Google Patents

Hochleistungshalbleiterdiodenlaser

Info

Publication number
DE60212902D1
DE60212902D1 DE60212902T DE60212902T DE60212902D1 DE 60212902 D1 DE60212902 D1 DE 60212902D1 DE 60212902 T DE60212902 T DE 60212902T DE 60212902 T DE60212902 T DE 60212902T DE 60212902 D1 DE60212902 D1 DE 60212902D1
Authority
DE
Germany
Prior art keywords
diode laser
semiconductor diode
performance semiconductor
performance
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60212902T
Other languages
English (en)
Other versions
DE60212902T2 (de
Inventor
Berthold Schmidt
Susanne Pawlik
Achim Thies
Christoph Harder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bookham Technology PLC filed Critical Bookham Technology PLC
Publication of DE60212902D1 publication Critical patent/DE60212902D1/de
Application granted granted Critical
Publication of DE60212902T2 publication Critical patent/DE60212902T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
DE60212902T 2001-05-10 2002-05-08 Hochleistungshalbleiterdiodenlaser Expired - Lifetime DE60212902T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/852,994 US6782024B2 (en) 2001-05-10 2001-05-10 High power semiconductor laser diode
US852994 2001-05-10

Publications (2)

Publication Number Publication Date
DE60212902D1 true DE60212902D1 (de) 2006-08-17
DE60212902T2 DE60212902T2 (de) 2007-08-30

Family

ID=25314744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212902T Expired - Lifetime DE60212902T2 (de) 2001-05-10 2002-05-08 Hochleistungshalbleiterdiodenlaser

Country Status (5)

Country Link
US (2) US6782024B2 (de)
EP (1) EP1261085B1 (de)
JP (1) JP4580612B2 (de)
CA (1) CA2385653A1 (de)
DE (1) DE60212902T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003096669A2 (en) * 2002-05-10 2003-11-20 Reisman Richard R Method and apparatus for browsing using multiple coordinated device
US7687291B2 (en) 2005-03-25 2010-03-30 Trumpf Photonics Inc. Laser facet passivation
KR20060122615A (ko) * 2005-05-27 2006-11-30 삼성전자주식회사 질화물계 반도체 레이저 다이오드 및 그 제조방법
GB2427751A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor opto-electronic device
GB2427752A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor laser diode
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
CN101855798B (zh) * 2007-11-08 2013-02-27 日亚化学工业株式会社 半导体激光器元件
US8018982B2 (en) * 2008-04-17 2011-09-13 Pin Long Sliced fiber bragg grating used as external cavity for semiconductor laser and solid state laser
US9166369B2 (en) 2013-04-09 2015-10-20 Nlight Photonics Corporation Flared laser oscillator waveguide
WO2015002683A2 (en) 2013-04-09 2015-01-08 Nlight Photonics Corporation Diode laser packages with flared laser oscillator waveguides
US10186836B2 (en) 2014-10-10 2019-01-22 Nlight, Inc. Multiple flared laser oscillator waveguide
US10270224B2 (en) 2015-06-04 2019-04-23 Nlight, Inc. Angled DBR-grating laser/amplifier with one or more mode-hopping regions
CN112189284B (zh) * 2018-05-25 2023-04-28 度亘激光技术（苏州）有限公司 多区域半导体激光器
CN116316054B (zh) * 2023-04-27 2023-08-01 深圳市星汉激光科技股份有限公司 一种具有电流非注入层的激光芯片及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
JP2831667B2 (ja) 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法
EP0544968B1 (de) * 1991-12-05 1995-09-27 International Business Machines Corporation Auf einer strukturierten Substratoberfläche aufgewachsene Halbleiter-Laserdiode
JPH07263811A (ja) 1994-03-25 1995-10-13 Hitachi Ltd 半導体レーザ装置
US5757833A (en) * 1995-11-06 1998-05-26 The Furukawa Electric Co., Ltd. Semiconductor laser having a transparent light emitting section, and a process of producing the same
JPH10163563A (ja) * 1996-11-29 1998-06-19 Furukawa Electric Co Ltd:The 半導体レーザ
KR100325066B1 (ko) 1998-06-30 2002-08-14 주식회사 현대 디스플레이 테크놀로지 박막트랜지스터의제조방법
TW413958B (en) * 1999-07-19 2000-12-01 Ind Tech Res Inst Semiconductor laser structure
JP2002076502A (ja) * 2000-08-31 2002-03-15 Sanyo Electric Co Ltd 半導体レーザ素子
JP4102554B2 (ja) * 2000-10-31 2008-06-18 シャープ株式会社 半導体レーザ素子及びその製造方法
JP5261857B2 (ja) * 2001-09-21 2013-08-14 日本電気株式会社 端面発光型半導体レーザおよび半導体レーザ・モジュール
JP2003198059A (ja) * 2001-12-27 2003-07-11 Sharp Corp 半導体レーザ素子およびその製造方法

Also Published As

Publication number Publication date
CA2385653A1 (en) 2002-11-10
US20050030998A1 (en) 2005-02-10
EP1261085B1 (de) 2006-07-05
US20020167982A1 (en) 2002-11-14
JP2003017805A (ja) 2003-01-17
US7218659B2 (en) 2007-05-15
EP1261085A2 (de) 2002-11-27
JP4580612B2 (ja) 2010-11-17
EP1261085A3 (de) 2003-11-19
DE60212902T2 (de) 2007-08-30
US6782024B2 (en) 2004-08-24

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