DE69533250D1 - Elektrisch löschbares nicht-flüchtiges Speicherbauteil und Verfahren zur Herstellung desselben - Google Patents
Elektrisch löschbares nicht-flüchtiges Speicherbauteil und Verfahren zur Herstellung desselbenInfo
- Publication number
- DE69533250D1 DE69533250D1 DE69533250T DE69533250T DE69533250D1 DE 69533250 D1 DE69533250 D1 DE 69533250D1 DE 69533250 T DE69533250 T DE 69533250T DE 69533250 T DE69533250 T DE 69533250T DE 69533250 D1 DE69533250 D1 DE 69533250D1
- Authority
- DE
- Germany
- Prior art keywords
- making
- memory device
- same
- volatile memory
- electrically erasable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9413556A FR2726935B1 (fr) | 1994-11-10 | 1994-11-10 | Dispositif a memoire non-volatile electriquement effacable et procede de realisation d'un tel dispositif |
FR9413556 | 1994-11-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69533250D1 true DE69533250D1 (de) | 2004-08-19 |
DE69533250T2 DE69533250T2 (de) | 2005-07-28 |
Family
ID=9468732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69533250T Expired - Lifetime DE69533250T2 (de) | 1994-11-10 | 1995-11-07 | Elektrisch löschbares nicht-flüchtiges Speicherbauteil und Verfahren zur Herstellung desselben |
Country Status (5)
Country | Link |
---|---|
US (1) | US5696718A (de) |
EP (1) | EP0712163B1 (de) |
JP (1) | JPH08213573A (de) |
DE (1) | DE69533250T2 (de) |
FR (1) | FR2726935B1 (de) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2767219B1 (fr) | 1997-08-08 | 1999-09-17 | Commissariat Energie Atomique | Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi |
JP2001044391A (ja) | 1999-07-29 | 2001-02-16 | Fujitsu Ltd | 半導体記憶装置とその製造方法 |
US6556481B1 (en) * | 2001-02-21 | 2003-04-29 | Aplus Flash Technology, Inc. | 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell |
TWI230392B (en) | 2001-06-18 | 2005-04-01 | Innovative Silicon Sa | Semiconductor device |
US7111109B2 (en) * | 2002-03-13 | 2006-09-19 | Canon Kabushiki Kaisha | Control system, recording device and electronic apparatus |
EP1355316B1 (de) | 2002-04-18 | 2007-02-21 | Innovative Silicon SA | Datenspeichergerät sowie Verfahren zum Auffrischen der auf einem solchen Gerät gespeicherten Daten |
EP1357603A3 (de) * | 2002-04-18 | 2004-01-14 | Innovative Silicon SA | Halbleiterbauelement |
US6862223B1 (en) * | 2002-07-05 | 2005-03-01 | Aplus Flash Technology, Inc. | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
DE10239490B3 (de) * | 2002-08-28 | 2004-04-29 | Infineon Technologies Ag | Halbleiterspeicher |
US7085153B2 (en) | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
US20040228168A1 (en) | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
US6912150B2 (en) | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
US7335934B2 (en) | 2003-07-22 | 2008-02-26 | Innovative Silicon S.A. | Integrated circuit device, and method of fabricating same |
US7184298B2 (en) | 2003-09-24 | 2007-02-27 | Innovative Silicon S.A. | Low power programming technique for a floating body memory transistor, memory cell, and memory array |
US7476939B2 (en) | 2004-11-04 | 2009-01-13 | Innovative Silicon Isi Sa | Memory cell having an electrically floating body transistor and programming technique therefor |
US7251164B2 (en) | 2004-11-10 | 2007-07-31 | Innovative Silicon S.A. | Circuitry for and method of improving statistical distribution of integrated circuits |
US7301838B2 (en) | 2004-12-13 | 2007-11-27 | Innovative Silicon S.A. | Sense amplifier circuitry and architecture to write data into and/or read from memory cells |
US7301803B2 (en) | 2004-12-22 | 2007-11-27 | Innovative Silicon S.A. | Bipolar reading technique for a memory cell having an electrically floating body transistor |
JPWO2007013133A1 (ja) * | 2005-07-25 | 2009-02-05 | スパンション エルエルシー | 半導体装置およびその制御方法 |
US7606066B2 (en) | 2005-09-07 | 2009-10-20 | Innovative Silicon Isi Sa | Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same |
US7355916B2 (en) | 2005-09-19 | 2008-04-08 | Innovative Silicon S.A. | Method and circuitry to generate a reference current for reading a memory cell, and device implementing same |
US7683430B2 (en) | 2005-12-19 | 2010-03-23 | Innovative Silicon Isi Sa | Electrically floating body memory cell and array, and method of operating or controlling same |
US7542345B2 (en) | 2006-02-16 | 2009-06-02 | Innovative Silicon Isi Sa | Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same |
US7492632B2 (en) | 2006-04-07 | 2009-02-17 | Innovative Silicon Isi Sa | Memory array having a programmable word length, and method of operating same |
US7606098B2 (en) | 2006-04-18 | 2009-10-20 | Innovative Silicon Isi Sa | Semiconductor memory array architecture with grouped memory cells, and method of controlling same |
WO2007128738A1 (en) | 2006-05-02 | 2007-11-15 | Innovative Silicon Sa | Semiconductor memory cell and array using punch-through to program and read same |
US8069377B2 (en) | 2006-06-26 | 2011-11-29 | Micron Technology, Inc. | Integrated circuit having memory array including ECC and column redundancy and method of operating the same |
US7542340B2 (en) | 2006-07-11 | 2009-06-02 | Innovative Silicon Isi Sa | Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same |
KR101406604B1 (ko) | 2007-01-26 | 2014-06-11 | 마이크론 테크놀로지, 인코포레이티드 | 게이트형 바디 영역으로부터 격리되는 소스/드레인 영역을 포함하는 플로팅-바디 dram 트랜지스터 |
WO2009031052A2 (en) | 2007-03-29 | 2009-03-12 | Innovative Silicon S.A. | Zero-capacitor (floating body) random access memory circuits with polycide word lines and manufacturing methods therefor |
US8064274B2 (en) | 2007-05-30 | 2011-11-22 | Micron Technology, Inc. | Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same |
US8085594B2 (en) | 2007-06-01 | 2011-12-27 | Micron Technology, Inc. | Reading technique for memory cell with electrically floating body transistor |
WO2009039169A1 (en) | 2007-09-17 | 2009-03-26 | Innovative Silicon S.A. | Refreshing data of memory cells with electrically floating body transistors |
US8536628B2 (en) | 2007-11-29 | 2013-09-17 | Micron Technology, Inc. | Integrated circuit having memory cell array including barriers, and method of manufacturing same |
US8349662B2 (en) | 2007-12-11 | 2013-01-08 | Micron Technology, Inc. | Integrated circuit having memory cell array, and method of manufacturing same |
US8773933B2 (en) | 2012-03-16 | 2014-07-08 | Micron Technology, Inc. | Techniques for accessing memory cells |
US8014195B2 (en) | 2008-02-06 | 2011-09-06 | Micron Technology, Inc. | Single transistor memory cell |
US8189376B2 (en) | 2008-02-08 | 2012-05-29 | Micron Technology, Inc. | Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same |
US7957206B2 (en) | 2008-04-04 | 2011-06-07 | Micron Technology, Inc. | Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same |
US7947543B2 (en) | 2008-09-25 | 2011-05-24 | Micron Technology, Inc. | Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation |
US7933140B2 (en) | 2008-10-02 | 2011-04-26 | Micron Technology, Inc. | Techniques for reducing a voltage swing |
US7924630B2 (en) | 2008-10-15 | 2011-04-12 | Micron Technology, Inc. | Techniques for simultaneously driving a plurality of source lines |
US8223574B2 (en) | 2008-11-05 | 2012-07-17 | Micron Technology, Inc. | Techniques for block refreshing a semiconductor memory device |
US8213226B2 (en) | 2008-12-05 | 2012-07-03 | Micron Technology, Inc. | Vertical transistor memory cell and array |
US8319294B2 (en) | 2009-02-18 | 2012-11-27 | Micron Technology, Inc. | Techniques for providing a source line plane |
US8710566B2 (en) | 2009-03-04 | 2014-04-29 | Micron Technology, Inc. | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
US8748959B2 (en) | 2009-03-31 | 2014-06-10 | Micron Technology, Inc. | Semiconductor memory device |
US8139418B2 (en) | 2009-04-27 | 2012-03-20 | Micron Technology, Inc. | Techniques for controlling a direct injection semiconductor memory device |
US8508994B2 (en) | 2009-04-30 | 2013-08-13 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
US8498157B2 (en) | 2009-05-22 | 2013-07-30 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8537610B2 (en) | 2009-07-10 | 2013-09-17 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9076543B2 (en) | 2009-07-27 | 2015-07-07 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
US8199595B2 (en) | 2009-09-04 | 2012-06-12 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8174881B2 (en) | 2009-11-24 | 2012-05-08 | Micron Technology, Inc. | Techniques for reducing disturbance in a semiconductor device |
US8310893B2 (en) | 2009-12-16 | 2012-11-13 | Micron Technology, Inc. | Techniques for reducing impact of array disturbs in a semiconductor memory device |
US8416636B2 (en) | 2010-02-12 | 2013-04-09 | Micron Technology, Inc. | Techniques for controlling a semiconductor memory device |
US8411513B2 (en) | 2010-03-04 | 2013-04-02 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device having hierarchical bit lines |
US8576631B2 (en) | 2010-03-04 | 2013-11-05 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
US8369177B2 (en) | 2010-03-05 | 2013-02-05 | Micron Technology, Inc. | Techniques for reading from and/or writing to a semiconductor memory device |
CN102812552B (zh) | 2010-03-15 | 2015-11-25 | 美光科技公司 | 半导体存储器装置及用于对半导体存储器装置进行偏置的方法 |
US8411524B2 (en) | 2010-05-06 | 2013-04-02 | Micron Technology, Inc. | Techniques for refreshing a semiconductor memory device |
US8531878B2 (en) | 2011-05-17 | 2013-09-10 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
US9559216B2 (en) | 2011-06-06 | 2017-01-31 | Micron Technology, Inc. | Semiconductor memory device and method for biasing same |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783766A (en) * | 1986-05-30 | 1988-11-08 | Seeq Technology, Inc. | Block electrically erasable EEPROM |
JP3018085B2 (ja) * | 1990-05-16 | 2000-03-13 | セイコーインスツルメンツ株式会社 | 半導体不揮発性メモリ |
US5243559A (en) * | 1990-12-12 | 1993-09-07 | Nippon Steel Corporation | Semiconductor memory device |
JP3097200B2 (ja) * | 1991-08-26 | 2000-10-10 | 日本電気株式会社 | 半導体装置 |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
WO1994023444A2 (en) * | 1993-04-02 | 1994-10-13 | Harris Corporation | Bonded wafer processing with oxidative bonding |
US5794127A (en) * | 1996-09-16 | 1998-08-11 | Lansang; Wilfredo | Headphone remote control for operating an entertainment center |
-
1994
- 1994-11-10 FR FR9413556A patent/FR2726935B1/fr not_active Expired - Fee Related
-
1995
- 1995-11-06 US US08/553,877 patent/US5696718A/en not_active Expired - Lifetime
- 1995-11-07 EP EP95402489A patent/EP0712163B1/de not_active Expired - Lifetime
- 1995-11-07 DE DE69533250T patent/DE69533250T2/de not_active Expired - Lifetime
- 1995-11-09 JP JP7291530A patent/JPH08213573A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2726935A1 (fr) | 1996-05-15 |
EP0712163B1 (de) | 2004-07-14 |
EP0712163A1 (de) | 1996-05-15 |
DE69533250T2 (de) | 2005-07-28 |
US5696718A (en) | 1997-12-09 |
JPH08213573A (ja) | 1996-08-20 |
FR2726935B1 (fr) | 1996-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69533250D1 (de) | Elektrisch löschbares nicht-flüchtiges Speicherbauteil und Verfahren zur Herstellung desselben | |
DE69428658D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung | |
DE69733930D1 (de) | Smart-Karte und Verfahren zur Herstellung derselben | |
DE69028665D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung | |
DE69528851D1 (de) | Einchipsteuerungsspeicheranordnung und eine Speicherarchitektur und Verfahren zur Inbetriebnahme derselben | |
DE69833071D1 (de) | Blattrahmen-IC-Karte und Verfahren zur Herstellung derselben | |
DE69714353D1 (de) | Nichtflüchtige Speicherzelle mit einzigem Gate und Verfahren zur Benutzung | |
DE19983016T1 (de) | Airbag-Abdeckung und Verfahren zur Herstellung derselben | |
DE69737053D1 (de) | Chip-Widerstand und Verfahren zu dessen Herstellung | |
DE69428516D1 (de) | Flash-EEPROM-Speicher-Matrix und Verfahren zur Vorspannung | |
DE69528111D1 (de) | Biosensor und Verfahren zur Herstellung desselben | |
DE69631579D1 (de) | Nichtflüchtige Halbleiteranordnung und Verfahren zur Herstellung | |
DE69739763D1 (de) | Halbleiteranordnung und Verfahren zur Herstellung | |
DE69529966D1 (de) | Tintenzusammensetzung und Verfahren zur Herstellung derselben | |
DE69931494D1 (de) | Universales speicherelement und programmierverfahren | |
DE69316810D1 (de) | SiGe-SOI-MOSFET und Verfahren zur Herstellung | |
DE19781457T1 (de) | Thermoelektrisches Element und Verfahren zur Herstellung desselben | |
DE69839600D1 (de) | Ferroelektrisches speicherelement und verfahren zur herstellung | |
DE69203834D1 (de) | Eigenschaden-Kontrollvorrichtung und Verfahren zur Herstellung und Anwendung. | |
DE69617772D1 (de) | Thermistor-Vorrichtung und Verfahren zur Herstellung | |
DE69631315D1 (de) | Halbleiterspeicheranordnung und Verfahren zur Herstellung | |
DE69319978D1 (de) | Speicherkarte mit IC und Verfahren zur Herstellung derselben | |
DE69738518D1 (de) | Leiterähnlicher Widerstand und Verfahren zu dessen Herstellung | |
DE69534989D1 (de) | Integriertes optisches Regelelement und Verfahren zu seiner Herstellung und integriertoptisches Element und es verwendende integriertoptische Schaltkreisanordnung | |
DE69407318D1 (de) | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |