DE69839600D1 - Ferroelektrisches speicherelement und verfahren zur herstellung - Google Patents
Ferroelektrisches speicherelement und verfahren zur herstellungInfo
- Publication number
- DE69839600D1 DE69839600D1 DE69839600T DE69839600T DE69839600D1 DE 69839600 D1 DE69839600 D1 DE 69839600D1 DE 69839600 T DE69839600 T DE 69839600T DE 69839600 T DE69839600 T DE 69839600T DE 69839600 D1 DE69839600 D1 DE 69839600D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- memory element
- ferroelectric memory
- ferroelectric
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13396597A JP3190011B2 (ja) | 1997-05-23 | 1997-05-23 | 強誘電体記憶素子およびその製造方法 |
PCT/JP1998/002207 WO1998053506A1 (en) | 1997-05-23 | 1998-05-18 | Ferroelectric memory element and method of producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69839600D1 true DE69839600D1 (de) | 2008-07-24 |
Family
ID=15117230
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69839600T Expired - Lifetime DE69839600D1 (de) | 1997-05-23 | 1998-05-18 | Ferroelektrisches speicherelement und verfahren zur herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6097058A (de) |
EP (1) | EP0940856B1 (de) |
JP (1) | JP3190011B2 (de) |
KR (1) | KR100476867B1 (de) |
DE (1) | DE69839600D1 (de) |
WO (1) | WO1998053506A1 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6368919B2 (en) | 1999-01-19 | 2002-04-09 | Micron Technology, Inc. | Method and composite for decreasing charge leakage |
EP1192648A2 (de) * | 1999-06-10 | 2002-04-03 | Symetrix Corporation | Dünne schichten aus metalloxid für anwendungen, welche hohe dielektrische konstanten erforden |
US6495878B1 (en) | 1999-08-02 | 2002-12-17 | Symetrix Corporation | Interlayer oxide containing thin films for high dielectric constant application |
KR100333669B1 (ko) | 1999-06-28 | 2002-04-24 | 박종섭 | 레드니오비움지르코니움타이타니트 용액 형성 방법 및 그를 이용한 강유전체 캐패시터 제조 방법 |
DE19946437A1 (de) * | 1999-09-28 | 2001-04-12 | Infineon Technologies Ag | Ferroelektrischer Transistor |
KR100747369B1 (ko) | 1999-09-30 | 2007-08-07 | 로무 가부시키가이샤 | 불휘발성 메모리 |
JP4938921B2 (ja) | 2000-03-16 | 2012-05-23 | 康夫 垂井 | トランジスタ型強誘電体不揮発性記憶素子 |
JP2002016232A (ja) * | 2000-06-27 | 2002-01-18 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその駆動方法 |
KR100363393B1 (ko) * | 2000-06-28 | 2002-11-30 | 한국과학기술연구원 | 비파괴판독형 불휘발성 기억소자의 메모리 셀 소자 및 그제조 방법 |
ATE394518T1 (de) * | 2001-04-03 | 2008-05-15 | Forschungszentrum Juelich Gmbh | Wärmedämmschicht auf basis von la2 zr2 o7 für hohe temperaturen |
JP4825373B2 (ja) * | 2001-08-14 | 2011-11-30 | ローム株式会社 | 強誘電体薄膜の製造方法およびこれを用いた強誘電体メモリの製造方法 |
DE10214159B4 (de) * | 2002-03-28 | 2008-03-20 | Qimonda Ag | Verfahren zur Herstellung einer Referenzschicht für MRAM-Speicherzellen |
NO326130B1 (no) * | 2002-10-08 | 2008-10-06 | Enok Tjotta | Fremgangsmate for seleksjon og testing av forbindelser som inhiberer eller stimulerer klonal cellevekst |
JP4346919B2 (ja) * | 2003-02-05 | 2009-10-21 | 忠弘 大見 | 強誘電体膜,半導体装置及び強誘電体膜の製造装置 |
US6912150B2 (en) * | 2003-05-13 | 2005-06-28 | Lionel Portman | Reference current generator, and method of programming, adjusting and/or operating same |
EP1634323A4 (de) * | 2003-06-13 | 2008-06-04 | Univ North Carolina State | Komplexe oxide zur verwendung in halbleiterbauelementen und diesbezügliche verfahren |
KR100655780B1 (ko) | 2004-12-20 | 2006-12-08 | 삼성전자주식회사 | 플래시 메모리 장치 및 그 제조 방법 |
DE102005051573B4 (de) * | 2005-06-17 | 2007-10-18 | IHP GmbH - Innovations for High Performance Microelectronics/Institut für innovative Mikroelektronik | MIM/MIS-Struktur mit Praseodymtitanat als Isolatormaterial |
WO2008126961A1 (en) * | 2007-04-12 | 2008-10-23 | University Of Seoul Foundation Of Industry-Academic Cooperation | Mfmis-fet, mfmis-ferroelectric memory device, and methods of manufacturing the same |
JP2009266967A (ja) * | 2008-04-23 | 2009-11-12 | Tohoku Univ | 強誘電体膜、強誘電体膜を有する半導体装置、及びそれらの製造方法 |
JP2010062221A (ja) * | 2008-09-01 | 2010-03-18 | Sharp Corp | 強誘電体ゲート電界効果トランジスタ、それを用いたメモリ素子及び強誘電体ゲート電界効果トランジスタの製造方法 |
EP2484794A1 (de) * | 2011-02-07 | 2012-08-08 | Siemens Aktiengesellschaft | Material mit Pyrochlorstruktur mit Tantal, Verwendung des Materials, Schichtsystem und Verfahren zur Herstellung eines Schichtsystems |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3264506B2 (ja) * | 1991-11-18 | 2002-03-11 | ローム株式会社 | 強誘電体不揮発性記憶装置 |
JPH09213899A (ja) * | 1996-02-06 | 1997-08-15 | Toshiba Corp | 強誘電体膜を有する不揮発性メモリ装置 |
-
1997
- 1997-05-23 JP JP13396597A patent/JP3190011B2/ja not_active Expired - Fee Related
-
1998
- 1998-05-18 DE DE69839600T patent/DE69839600D1/de not_active Expired - Lifetime
- 1998-05-18 KR KR10-1999-7000226A patent/KR100476867B1/ko not_active IP Right Cessation
- 1998-05-18 EP EP98919659A patent/EP0940856B1/de not_active Expired - Lifetime
- 1998-05-18 WO PCT/JP1998/002207 patent/WO1998053506A1/ja active IP Right Grant
-
1999
- 1999-01-22 US US09/235,714 patent/US6097058A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6097058A (en) | 2000-08-01 |
KR100476867B1 (ko) | 2005-03-17 |
KR20000023760A (ko) | 2000-04-25 |
WO1998053506A1 (en) | 1998-11-26 |
JPH10326872A (ja) | 1998-12-08 |
JP3190011B2 (ja) | 2001-07-16 |
EP0940856A4 (de) | 2002-03-27 |
EP0940856B1 (de) | 2008-06-11 |
EP0940856A1 (de) | 1999-09-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Representative=s name: BUCHER, R., DIPL.-ING. UNIV., PAT.-ANW., 85521 OTT |
|
8364 | No opposition during term of opposition |