DE69518821D1 - Coulomb-Blockade-Element und Verfahren zur Herstellung - Google Patents
Coulomb-Blockade-Element und Verfahren zur HerstellungInfo
- Publication number
- DE69518821D1 DE69518821D1 DE69518821T DE69518821T DE69518821D1 DE 69518821 D1 DE69518821 D1 DE 69518821D1 DE 69518821 T DE69518821 T DE 69518821T DE 69518821 T DE69518821 T DE 69518821T DE 69518821 D1 DE69518821 D1 DE 69518821D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- coulomb blockade
- blockade element
- coulomb
- blockade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/937—Single electron transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26380994 | 1994-10-27 | ||
JP22887295 | 1995-09-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69518821D1 true DE69518821D1 (de) | 2000-10-19 |
DE69518821T2 DE69518821T2 (de) | 2001-04-26 |
Family
ID=26528504
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518821T Expired - Lifetime DE69518821T2 (de) | 1994-10-27 | 1995-10-24 | Coulomb-Blockade-Element und Verfahren zur Herstellung |
DE69531367T Expired - Lifetime DE69531367T2 (de) | 1994-10-27 | 1995-10-24 | Coulomb-Blockade-Element und Verfahren zur Herstellung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69531367T Expired - Lifetime DE69531367T2 (de) | 1994-10-27 | 1995-10-24 | Coulomb-Blockade-Element und Verfahren zur Herstellung |
Country Status (3)
Country | Link |
---|---|
US (2) | US5604154A (de) |
EP (2) | EP1028472B1 (de) |
DE (2) | DE69518821T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5754077A (en) * | 1995-03-16 | 1998-05-19 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET |
US5838021A (en) * | 1995-12-26 | 1998-11-17 | Ancona; Mario G. | Single electron digital circuits |
JPH09312378A (ja) * | 1996-03-19 | 1997-12-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5897366A (en) * | 1997-03-10 | 1999-04-27 | Motorola, Inc. | Method of resistless gate metal etch for fets |
US5945686A (en) * | 1997-04-28 | 1999-08-31 | Hitachi, Ltd. | Tunneling electronic device |
US6198113B1 (en) | 1999-04-22 | 2001-03-06 | Acorn Technologies, Inc. | Electrostatically operated tunneling transistor |
KR100340929B1 (ko) * | 1999-11-25 | 2002-06-20 | 오길록 | 금속 초박막을 이용한 단전자 트랜지스터 |
US7615402B1 (en) | 2000-07-07 | 2009-11-10 | Acorn Technologies, Inc. | Electrostatically operated tunneling transistor |
EP1229590A1 (de) * | 2001-01-31 | 2002-08-07 | Japan Science and Technology Corporation | Korrelative Ladungsverschiebungsanordnung und Verfahren zur Herstellung |
FR2830686B1 (fr) * | 2001-10-04 | 2004-10-22 | Commissariat Energie Atomique | Transistor a un electron et a canal vertical, et procedes de realisation d'un tel transistor |
AU2003215840A1 (en) * | 2002-03-28 | 2003-10-13 | Koninklijke Philips Electronics N.V. | Nanowire and electronic device |
TWI227516B (en) * | 2003-12-26 | 2005-02-01 | Ind Tech Res Inst | Nano-electronic devices using discrete exposure method |
JP4249684B2 (ja) * | 2004-10-06 | 2009-04-02 | 株式会社東芝 | 半導体記憶装置 |
CN100409454C (zh) * | 2005-10-20 | 2008-08-06 | 中国科学院半导体研究所 | 通过注氧进行量子限制的硅基单电子晶体管 |
KR20100072610A (ko) * | 2008-12-22 | 2010-07-01 | 한국전자통신연구원 | 반도체 장치 및 그 제조 방법 |
JP5604862B2 (ja) * | 2009-01-09 | 2014-10-15 | ソニー株式会社 | 流路デバイス、複素誘電率測定装置及び誘電サイトメトリー装置 |
CN109643730B (zh) * | 2016-09-30 | 2022-09-13 | 英特尔公司 | 单电子晶体管(set)和基于set的qubit检测器设备 |
FR3057105A1 (fr) | 2016-10-05 | 2018-04-06 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif a boite(s) quantique(s) comportant des dopants localises dans une couche semi-conductrice mince |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5401980A (en) * | 1991-09-04 | 1995-03-28 | International Business Machines Corporation | 2D/1D junction device as a Coulomb blockade gate |
JPH0590567A (ja) * | 1991-09-25 | 1993-04-09 | Hitachi Ltd | 一電子トンネルトランジスタ回路およびその製造方法 |
JP3156307B2 (ja) * | 1991-10-15 | 2001-04-16 | 株式会社日立製作所 | 一電子トンネルトランジスタ及びその集積回路 |
GB9226382D0 (en) * | 1992-12-18 | 1993-02-10 | Hitachi Europ Ltd | Memory device |
-
1995
- 1995-10-20 US US08/546,529 patent/US5604154A/en not_active Expired - Lifetime
- 1995-10-24 EP EP00250045A patent/EP1028472B1/de not_active Expired - Lifetime
- 1995-10-24 DE DE69518821T patent/DE69518821T2/de not_active Expired - Lifetime
- 1995-10-24 EP EP95250256A patent/EP0718894B1/de not_active Expired - Lifetime
- 1995-10-24 DE DE69531367T patent/DE69531367T2/de not_active Expired - Lifetime
-
1996
- 1996-11-13 US US08/746,654 patent/US5665979A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1028472A3 (de) | 2000-08-30 |
EP0718894A2 (de) | 1996-06-26 |
DE69531367T2 (de) | 2004-04-15 |
EP1028472B1 (de) | 2003-07-23 |
EP1028472A2 (de) | 2000-08-16 |
EP0718894A3 (de) | 1996-07-31 |
DE69518821T2 (de) | 2001-04-26 |
US5665979A (en) | 1997-09-09 |
EP0718894B1 (de) | 2000-09-13 |
DE69531367D1 (de) | 2003-08-28 |
US5604154A (en) | 1997-02-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |