DE69531367D1 - Coulomb-Blockade-Element und Verfahren zur Herstellung - Google Patents

Coulomb-Blockade-Element und Verfahren zur Herstellung

Info

Publication number
DE69531367D1
DE69531367D1 DE69531367T DE69531367T DE69531367D1 DE 69531367 D1 DE69531367 D1 DE 69531367D1 DE 69531367 T DE69531367 T DE 69531367T DE 69531367 T DE69531367 T DE 69531367T DE 69531367 D1 DE69531367 D1 DE 69531367D1
Authority
DE
Germany
Prior art keywords
preparation
coulomb blockade
blockade element
coulomb
blockade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69531367T
Other languages
English (en)
Other versions
DE69531367T2 (de
Inventor
Yasuo Takahashi
Masao Nagase
Akira Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69531367D1 publication Critical patent/DE69531367D1/de
Publication of DE69531367T2 publication Critical patent/DE69531367T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66469—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with one- or zero-dimensional channel, e.g. quantum wire field-effect transistors, in-plane gate transistors [IPG], single electron transistors [SET], Coulomb blockade transistors, striped channel transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/7613—Single electron transistors; Coulomb blockade devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Photovoltaic Devices (AREA)
DE69531367T 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung Expired - Lifetime DE69531367T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP26380994 1994-10-27
JP26380994 1994-10-27
JP22887295 1995-09-06
JP22887295 1995-09-06

Publications (2)

Publication Number Publication Date
DE69531367D1 true DE69531367D1 (de) 2003-08-28
DE69531367T2 DE69531367T2 (de) 2004-04-15

Family

ID=26528504

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69531367T Expired - Lifetime DE69531367T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung
DE69518821T Expired - Lifetime DE69518821T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69518821T Expired - Lifetime DE69518821T2 (de) 1994-10-27 1995-10-24 Coulomb-Blockade-Element und Verfahren zur Herstellung

Country Status (3)

Country Link
US (2) US5604154A (de)
EP (2) EP0718894B1 (de)
DE (2) DE69531367T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754077A (en) * 1995-03-16 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor integrated circuit having plural functional blocks, wherein one of the blocks comprises a small tunnel junction device and another block comprises a FET
US5838021A (en) * 1995-12-26 1998-11-17 Ancona; Mario G. Single electron digital circuits
JPH09312378A (ja) * 1996-03-19 1997-12-02 Fujitsu Ltd 半導体装置及びその製造方法
US5897366A (en) * 1997-03-10 1999-04-27 Motorola, Inc. Method of resistless gate metal etch for fets
US5945686A (en) * 1997-04-28 1999-08-31 Hitachi, Ltd. Tunneling electronic device
US6198113B1 (en) 1999-04-22 2001-03-06 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
KR100340929B1 (ko) * 1999-11-25 2002-06-20 오길록 금속 초박막을 이용한 단전자 트랜지스터
US7615402B1 (en) 2000-07-07 2009-11-10 Acorn Technologies, Inc. Electrostatically operated tunneling transistor
EP1229590A1 (de) * 2001-01-31 2002-08-07 Japan Science and Technology Corporation Korrelative Ladungsverschiebungsanordnung und Verfahren zur Herstellung
FR2830686B1 (fr) * 2001-10-04 2004-10-22 Commissariat Energie Atomique Transistor a un electron et a canal vertical, et procedes de realisation d'un tel transistor
JP4920872B2 (ja) * 2002-03-28 2012-04-18 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノワイヤの製造方法
TWI227516B (en) * 2003-12-26 2005-02-01 Ind Tech Res Inst Nano-electronic devices using discrete exposure method
JP4249684B2 (ja) * 2004-10-06 2009-04-02 株式会社東芝 半導体記憶装置
CN100409454C (zh) * 2005-10-20 2008-08-06 中国科学院半导体研究所 通过注氧进行量子限制的硅基单电子晶体管
KR20100072610A (ko) * 2008-12-22 2010-07-01 한국전자통신연구원 반도체 장치 및 그 제조 방법
JP5604862B2 (ja) * 2009-01-09 2014-10-15 ソニー株式会社 流路デバイス、複素誘電率測定装置及び誘電サイトメトリー装置
US11164966B2 (en) 2016-09-30 2021-11-02 Intel Corporation Single electron transistors (SETs) and set-based qubit-detector arrangements
FR3057105A1 (fr) 2016-10-05 2018-04-06 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif a boite(s) quantique(s) comportant des dopants localises dans une couche semi-conductrice mince

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401980A (en) * 1991-09-04 1995-03-28 International Business Machines Corporation 2D/1D junction device as a Coulomb blockade gate
JPH0590567A (ja) * 1991-09-25 1993-04-09 Hitachi Ltd 一電子トンネルトランジスタ回路およびその製造方法
JP3156307B2 (ja) * 1991-10-15 2001-04-16 株式会社日立製作所 一電子トンネルトランジスタ及びその集積回路
GB9226382D0 (en) * 1992-12-18 1993-02-10 Hitachi Europ Ltd Memory device

Also Published As

Publication number Publication date
EP0718894A2 (de) 1996-06-26
EP0718894B1 (de) 2000-09-13
EP1028472B1 (de) 2003-07-23
DE69531367T2 (de) 2004-04-15
US5604154A (en) 1997-02-18
EP1028472A3 (de) 2000-08-30
DE69518821T2 (de) 2001-04-26
EP0718894A3 (de) 1996-07-31
EP1028472A2 (de) 2000-08-16
DE69518821D1 (de) 2000-10-19
US5665979A (en) 1997-09-09

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