DE69929500D1 - Ferroelektrischer nichtflüchtiger Transistor und dessen Herstellungsverfahren - Google Patents

Ferroelektrischer nichtflüchtiger Transistor und dessen Herstellungsverfahren

Info

Publication number
DE69929500D1
DE69929500D1 DE69929500T DE69929500T DE69929500D1 DE 69929500 D1 DE69929500 D1 DE 69929500D1 DE 69929500 T DE69929500 T DE 69929500T DE 69929500 T DE69929500 T DE 69929500T DE 69929500 D1 DE69929500 D1 DE 69929500D1
Authority
DE
Germany
Prior art keywords
manufacturing
ferroelectric nonvolatile
nonvolatile transistor
transistor
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69929500T
Other languages
English (en)
Other versions
DE69929500T2 (de
Inventor
Sheng Teng Hsu
Fengyang Zhang
Jer-Shen Maa
Tingkai Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69929500D1 publication Critical patent/DE69929500D1/de
Application granted granted Critical
Publication of DE69929500T2 publication Critical patent/DE69929500T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE69929500T 1998-11-05 1999-09-10 Ferroelektrischer nichtflüchtiger Transistor und dessen Herstellungsverfahren Expired - Lifetime DE69929500T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US187238 1994-01-25
US09/187,238 US6048740A (en) 1998-11-05 1998-11-05 Ferroelectric nonvolatile transistor and method of making same

Publications (2)

Publication Number Publication Date
DE69929500D1 true DE69929500D1 (de) 2006-04-06
DE69929500T2 DE69929500T2 (de) 2006-08-31

Family

ID=22688155

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69929500T Expired - Lifetime DE69929500T2 (de) 1998-11-05 1999-09-10 Ferroelektrischer nichtflüchtiger Transistor und dessen Herstellungsverfahren

Country Status (6)

Country Link
US (2) US6048740A (de)
EP (1) EP0999597B1 (de)
JP (1) JP3717039B2 (de)
KR (1) KR100340924B1 (de)
DE (1) DE69929500T2 (de)
TW (1) TW419827B (de)

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KR100436056B1 (ko) * 1997-12-30 2004-12-17 주식회사 하이닉스반도체 강유전체 커패시터의 확산장벽막 형성방법
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6190963B1 (en) * 1999-05-21 2001-02-20 Sharp Laboratories Of America, Inc. Composite iridium-metal-oxygen barrier structure with refractory metal companion barrier and method for same
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
US6495377B2 (en) * 2001-02-13 2002-12-17 Sharp Laboratories Of America, Inc. Method of fabricating ferroelectric memory transistors
US20020109166A1 (en) * 2001-02-13 2002-08-15 Hsu Sheng Teng MFMOS/MFMS non-volatile memory transistors and method of making same
JP4887566B2 (ja) * 2001-03-27 2012-02-29 独立行政法人産業技術総合研究所 半導体不揮発性記憶素子及びその製造方法
US6602720B2 (en) 2001-03-28 2003-08-05 Sharp Laboratories Of America, Inc. Single transistor ferroelectric transistor structure with high-K insulator and method of fabricating same
US6531324B2 (en) 2001-03-28 2003-03-11 Sharp Laboratories Of America, Inc. MFOS memory transistor & method of fabricating same
JP2002313966A (ja) * 2001-04-16 2002-10-25 Yasuo Tarui トランジスタ型強誘電体不揮発性記憶素子とその製造方法
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6531325B1 (en) * 2002-06-04 2003-03-11 Sharp Laboratories Of America, Inc. Memory transistor and method of fabricating same
KR100620197B1 (ko) * 2002-12-30 2006-09-01 동부일렉트로닉스 주식회사 반도체 소자의 모스형 트랜지스터 제조 방법
US7045421B2 (en) * 2003-04-22 2006-05-16 Nantero, Inc. Process for making bit selectable devices having elements made with nanotubes
US6995046B2 (en) * 2003-04-22 2006-02-07 Nantero, Inc. Process for making byte erasable devices having elements made with nanotubes
US7211854B2 (en) 2003-06-09 2007-05-01 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US7274064B2 (en) * 2003-06-09 2007-09-25 Nanatero, Inc. Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7709880B2 (en) * 2004-06-09 2010-05-04 Nantero, Inc. Field effect devices having a gate controlled via a nanotube switching element
US6995025B2 (en) * 2004-06-21 2006-02-07 Sharp Laboratories Of America, Inc. Asymmetrical programming ferroelectric memory transistor
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
US8362525B2 (en) 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20100252867A1 (en) * 2007-10-26 2010-10-07 University Of Seoul MFMS-FET, Ferroelectric Memory Device, And Methods Of Manufacturing The Same
US9773793B2 (en) * 2009-10-09 2017-09-26 Texas Instuments Incorporated Transistor performance modification with stressor structures
US9337210B2 (en) * 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
JP6751866B2 (ja) * 2016-04-22 2020-09-09 国立研究開発法人産業技術総合研究所 半導体強誘電体記憶素子の製造方法及び半導体強誘電体記憶トランジスタ
US10396145B2 (en) 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
EP3503200A1 (de) * 2017-12-22 2019-06-26 IMEC vzw Fe-fet-speichervorrichtung und verfahren zur programmierung solch einer vorrichtung
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
US11501812B2 (en) * 2020-07-31 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices including ferroelectric memory and methods of forming the same

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US4707897A (en) * 1976-02-17 1987-11-24 Ramtron Corporation Monolithic semiconductor integrated circuit ferroelectric memory device, and methods of fabricating and utilizing same
US5177589A (en) * 1990-01-29 1993-01-05 Hitachi, Ltd. Refractory metal thin film having a particular step coverage factor and ratio of surface roughness
KR100349999B1 (ko) * 1990-04-24 2002-12-11 세이코 엡슨 가부시키가이샤 강유전체를구비한반도체장치및그제조방법
US5384729A (en) * 1991-10-28 1995-01-24 Rohm Co., Ltd. Semiconductor storage device having ferroelectric film
EP0540993A1 (de) * 1991-11-06 1993-05-12 Ramtron International Corporation Struktur und Herstellung eines MOS-Feldeffekttransistors mit hoher Transkonduktanz unter Verwendung eines Gatedielektrikums, das aus einer übereinanderliegenden Pufferschicht/Ferroelektrikum/Pufferschicht besteht
EP0557937A1 (de) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozongasverarbeitung für ferroelektrischen Speicherschaltungen
US5499207A (en) * 1993-08-06 1996-03-12 Hitachi, Ltd. Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
JP3309260B2 (ja) * 1994-02-14 2002-07-29 日本テキサス・インスツルメンツ株式会社 キャパシタ
US5536962A (en) * 1994-11-07 1996-07-16 Motorola, Inc. Semiconductor device having a buried channel transistor
KR0141160B1 (ko) * 1995-03-22 1998-06-01 김광호 강유전체 메모리 장치 및 그 제조방법
US6013584A (en) * 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US5731608A (en) * 1997-03-07 1998-03-24 Sharp Microelectronics Technology, Inc. One transistor ferroelectric memory cell and method of making the same
JP4080050B2 (ja) * 1997-03-07 2008-04-23 シャープ株式会社 強誘電体メモリセル、半導体構造およびそれらの製造方法
US5926715A (en) * 1997-06-04 1999-07-20 Mosel Vitelic Inc. Method of forming lightly-doped drain by automatic PSG doping
US6002150A (en) * 1998-06-17 1999-12-14 Advanced Micro Devices, Inc. Compound material T gate structure for devices with gate dielectrics having a high dielectric constant
US6159781A (en) * 1998-10-01 2000-12-12 Chartered Semiconductor Manufacturing, Ltd. Way to fabricate the self-aligned T-shape gate to reduce gate resistivity

Also Published As

Publication number Publication date
KR100340924B1 (ko) 2002-06-20
EP0999597A1 (de) 2000-05-10
EP0999597B1 (de) 2006-01-18
US6048740A (en) 2000-04-11
KR20000035211A (ko) 2000-06-26
JP3717039B2 (ja) 2005-11-16
JP2000150812A (ja) 2000-05-30
DE69929500T2 (de) 2006-08-31
TW419827B (en) 2001-01-21
US6462366B1 (en) 2002-10-08

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