DE10194689T1 - Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung - Google Patents

Nichtflüchtiger Halbleiterspeicher und Verfahren zu dessen Herstellung

Info

Publication number
DE10194689T1
DE10194689T1 DE10194689T DE10194689T DE10194689T1 DE 10194689 T1 DE10194689 T1 DE 10194689T1 DE 10194689 T DE10194689 T DE 10194689T DE 10194689 T DE10194689 T DE 10194689T DE 10194689 T1 DE10194689 T1 DE 10194689T1
Authority
DE
Germany
Prior art keywords
production
semiconductor memory
volatile semiconductor
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10194689T
Other languages
English (en)
Other versions
DE10194689B4 (de
Inventor
Hiroyuki Moriya
Toshio Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE10194689T1 publication Critical patent/DE10194689T1/de
Application granted granted Critical
Publication of DE10194689B4 publication Critical patent/DE10194689B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/908—Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE10194689T 2000-10-27 2001-10-25 Nichtflüchtige Halbleiterspeicher mit zwei Speichereinheiten und Verfahren zu deren Herstellung Expired - Fee Related DE10194689B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000328127 2000-10-27
JP2000-328127 2000-10-27
JP2001106309A JP4904631B2 (ja) 2000-10-27 2001-04-04 不揮発性半導体記憶装置およびその製造方法
JP2001-106309 2001-04-04
PCT/JP2001/009390 WO2002039502A1 (fr) 2000-10-27 2001-10-25 Dispositif de stockage de semi-conducteur non volatil et procede de production correspondant

Publications (2)

Publication Number Publication Date
DE10194689T1 true DE10194689T1 (de) 2003-10-16
DE10194689B4 DE10194689B4 (de) 2011-07-28

Family

ID=26602886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10194689T Expired - Fee Related DE10194689B4 (de) 2000-10-27 2001-10-25 Nichtflüchtige Halbleiterspeicher mit zwei Speichereinheiten und Verfahren zu deren Herstellung

Country Status (6)

Country Link
US (2) US6803620B2 (de)
JP (1) JP4904631B2 (de)
DE (1) DE10194689B4 (de)
IL (1) IL150407A0 (de)
TW (1) TW531882B (de)
WO (1) WO2002039502A1 (de)

Families Citing this family (63)

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JP3496932B2 (ja) 2001-01-30 2004-02-16 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置
JP4325972B2 (ja) * 2001-01-30 2009-09-02 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置の製造方法
US6891262B2 (en) * 2001-07-19 2005-05-10 Sony Corporation Semiconductor device and method of producing the same
TW533539B (en) * 2002-06-13 2003-05-21 Intelligent Sources Dev Corp A scaled MOSFET device and its fabricating method
EP1376676A3 (de) 2002-06-24 2008-08-20 Interuniversitair Microelektronica Centrum Vzw Multibit-Festwertspeicherbauelement und Verfahren
US6900098B1 (en) * 2002-10-15 2005-05-31 Halo Lsi, Inc. Twin insulator charge storage device operation and its fabrication method
JP2004152977A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶装置
JP2004152924A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶素子および半導体装置
JP3873908B2 (ja) 2003-02-28 2007-01-31 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその製造方法
JP2004303789A (ja) * 2003-03-28 2004-10-28 Toshiba Corp 半導体装置及びその製造方法
KR100480645B1 (ko) * 2003-04-01 2005-03-31 삼성전자주식회사 역자기 정합 방식을 이용한 트윈―ｏｎｏ 형태의ｓｏｎｏｓ 메모리 소자 제조 방법
JP4620334B2 (ja) * 2003-05-20 2011-01-26 シャープ株式会社 半導体記憶装置、半導体装置及びそれらを備える携帯電子機器、並びにｉｃカード
DE10326805B4 (de) * 2003-06-13 2007-02-15 Infineon Technologies Ag Herstellungsverfahren für nichtflüchtige Speicherzellen
JP2005056889A (ja) * 2003-08-04 2005-03-03 Renesas Technology Corp 半導体記憶装置およびその製造方法
KR100498507B1 (ko) * 2003-08-08 2005-07-01 삼성전자주식회사 자기정렬형 1 비트 소노스(ｓｏｎｏｓ) 셀 및 그 형성방법
DE10352641A1 (de) * 2003-11-11 2005-02-17 Infineon Technologies Ag Charge-Trapping-Speicherzelle und Herstellungsverfahren
JP4629982B2 (ja) * 2004-02-13 2011-02-09 ルネサスエレクトロニクス株式会社 不揮発性記憶素子およびその製造方法
US7041545B2 (en) * 2004-03-08 2006-05-09 Infineon Technologies Ag Method for producing semiconductor memory devices and integrated memory device
JP2006041354A (ja) * 2004-07-29 2006-02-09 Renesas Technology Corp 半導体装置及びその製造方法
US7518179B2 (en) 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
CN101111943B (zh) 2004-11-30 2012-06-27 斯班逊有限公司 非易失性存储装置及其制造方法
US7227234B2 (en) * 2004-12-14 2007-06-05 Tower Semiconductor Ltd. Embedded non-volatile memory cell with charge-trapping sidewall spacers
US7067375B1 (en) * 2004-12-20 2006-06-27 Macronix International Co., Ltd. Non-volatile memory and method for fabricating the same
JP4890435B2 (ja) * 2005-01-28 2012-03-07 スパンション エルエルシー 不揮発性メモリ及びその制御方法
US7186607B2 (en) 2005-02-18 2007-03-06 Infineon Technologies Ag Charge-trapping memory device and method for production
JP2006302985A (ja) * 2005-04-18 2006-11-02 Renesas Technology Corp 不揮発性半導体装置の製造方法
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7226840B2 (en) * 2005-07-25 2007-06-05 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
KR100702029B1 (ko) * 2005-09-22 2007-03-30 삼성전자주식회사 플로팅된 드레인측 보조 게이트를 갖는 고전압 모스트랜지스터를 구비하는 비휘발성 메모리 소자들 및 그제조방법들
KR100687402B1 (ko) * 2005-11-21 2007-02-26 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
JP4906329B2 (ja) * 2005-12-02 2012-03-28 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置及びその製造方法
BRPI0620100B1 (pt) * 2005-12-22 2016-01-12 Fmc Corp composição inseticida compreendendo bifentrina e cipermetrina enriquecida.
US7482236B2 (en) * 2006-01-06 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a sidewall SONOS memory device
US7405119B2 (en) * 2006-01-06 2008-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a sidewall SONOS memory device
US7482231B2 (en) * 2006-01-06 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing of memory array and periphery
US7973366B2 (en) * 2006-02-13 2011-07-05 Macronix International Co., Ltd. Dual-gate, sonos, non-volatile memory cells and arrays thereof
JP2007227851A (ja) * 2006-02-27 2007-09-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
JP4680116B2 (ja) * 2006-03-31 2011-05-11 Ｏｋｉセミコンダクタ株式会社 半導体装置
US8188536B2 (en) * 2006-06-26 2012-05-29 Macronix International Co., Ltd. Memory device and manufacturing method and operating method thereof
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
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US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
KR100948294B1 (ko) * 2007-10-12 2010-03-17 주식회사 동부하이텍 반도체 소자의 제조방법
JP5404149B2 (ja) 2009-04-16 2014-01-29 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR101133701B1 (ko) * 2010-09-10 2012-04-06 주식회사 하이닉스반도체 매립비트라인을 구비한 반도체장치 제조 방법
CN102655168A (zh) * 2011-03-04 2012-09-05 中国科学院微电子研究所 栅极结构及其制造方法
FR2985592B1 (fr) * 2012-01-09 2014-02-21 Commissariat Energie Atomique Procede de fabrication d'une cellule memoire non volatile a double grille
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JP3973819B2 (ja) * 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
JP2002203918A (ja) 2002-07-19
DE10194689B4 (de) 2011-07-28
US20050020013A1 (en) 2005-01-27
US20030053345A1 (en) 2003-03-20
IL150407A0 (en) 2002-12-01
US6803620B2 (en) 2004-10-12
JP4904631B2 (ja) 2012-03-28
WO2002039502A1 (fr) 2002-05-16
US6858497B2 (en) 2005-02-22
TW531882B (en) 2003-05-11

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8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 27/115 AFI20051017BHDE

R018 Grant decision by examination section/examining division
R020 Patent grant now final

Effective date: 20111029

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130501