IL150407A0 - Non-volatile semiconductor memory device and a method of producing the same - Google Patents

Non-volatile semiconductor memory device and a method of producing the same

Info

Publication number
IL150407A0
IL150407A0 IL15040701A IL15040701A IL150407A0 IL 150407 A0 IL150407 A0 IL 150407A0 IL 15040701 A IL15040701 A IL 15040701A IL 15040701 A IL15040701 A IL 15040701A IL 150407 A0 IL150407 A0 IL 150407A0
Authority
IL
Israel
Prior art keywords
producing
same
memory device
semiconductor memory
volatile semiconductor
Prior art date
Application number
IL15040701A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of IL150407A0 publication Critical patent/IL150407A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/908—Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines
IL15040701A 2000-10-27 2001-10-25 Non-volatile semiconductor memory device and a method of producing the same IL150407A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000328127 2000-10-27
JP2001106309A JP4904631B2 (ja) 2000-10-27 2001-04-04 不揮発性半導体記憶装置およびその製造方法
PCT/JP2001/009390 WO2002039502A1 (fr) 2000-10-27 2001-10-25 Dispositif de stockage de semi-conducteur non volatil et procede de production correspondant

Publications (1)

Publication Number Publication Date
IL150407A0 true IL150407A0 (en) 2002-12-01

Family

ID=26602886

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15040701A IL150407A0 (en) 2000-10-27 2001-10-25 Non-volatile semiconductor memory device and a method of producing the same

Country Status (6)

Country Link
US (2) US6803620B2 (de)
JP (1) JP4904631B2 (de)
DE (1) DE10194689B4 (de)
IL (1) IL150407A0 (de)
TW (1) TW531882B (de)
WO (1) WO2002039502A1 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3496932B2 (ja) 2001-01-30 2004-02-16 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置
JP4325972B2 (ja) * 2001-01-30 2009-09-02 セイコーエプソン株式会社 不揮発性半導体記憶装置を含む半導体集積回路装置の製造方法
US6891262B2 (en) * 2001-07-19 2005-05-10 Sony Corporation Semiconductor device and method of producing the same
TW533539B (en) * 2002-06-13 2003-05-21 Intelligent Sources Dev Corp A scaled MOSFET device and its fabricating method
EP1376676A3 (de) 2002-06-24 2008-08-20 Interuniversitair Microelektronica Centrum Vzw Multibit-Festwertspeicherbauelement und Verfahren
US6900098B1 (en) * 2002-10-15 2005-05-31 Halo Lsi, Inc. Twin insulator charge storage device operation and its fabrication method
JP2004152977A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶装置
JP2004152924A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶素子および半導体装置
JP3873908B2 (ja) 2003-02-28 2007-01-31 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその製造方法
JP2004303789A (ja) * 2003-03-28 2004-10-28 Toshiba Corp 半導体装置及びその製造方法
KR100480645B1 (ko) * 2003-04-01 2005-03-31 삼성전자주식회사 역자기 정합 방식을 이용한 트윈―ｏｎｏ 형태의ｓｏｎｏｓ 메모리 소자 제조 방법
JP4620334B2 (ja) * 2003-05-20 2011-01-26 シャープ株式会社 半導体記憶装置、半導体装置及びそれらを備える携帯電子機器、並びにｉｃカード
DE10326805B4 (de) * 2003-06-13 2007-02-15 Infineon Technologies Ag Herstellungsverfahren für nichtflüchtige Speicherzellen
JP2005056889A (ja) * 2003-08-04 2005-03-03 Renesas Technology Corp 半導体記憶装置およびその製造方法
KR100498507B1 (ko) * 2003-08-08 2005-07-01 삼성전자주식회사 자기정렬형 1 비트 소노스(ｓｏｎｏｓ) 셀 및 그 형성방법
DE10352641A1 (de) * 2003-11-11 2005-02-17 Infineon Technologies Ag Charge-Trapping-Speicherzelle und Herstellungsverfahren
JP4629982B2 (ja) * 2004-02-13 2011-02-09 ルネサスエレクトロニクス株式会社 不揮発性記憶素子およびその製造方法
US7041545B2 (en) * 2004-03-08 2006-05-09 Infineon Technologies Ag Method for producing semiconductor memory devices and integrated memory device
JP2006041354A (ja) * 2004-07-29 2006-02-09 Renesas Technology Corp 半導体装置及びその製造方法
US7518179B2 (en) 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
CN101111943B (zh) 2004-11-30 2012-06-27 斯班逊有限公司 非易失性存储装置及其制造方法
US7227234B2 (en) * 2004-12-14 2007-06-05 Tower Semiconductor Ltd. Embedded non-volatile memory cell with charge-trapping sidewall spacers
US7067375B1 (en) * 2004-12-20 2006-06-27 Macronix International Co., Ltd. Non-volatile memory and method for fabricating the same
WO2006080081A1 (ja) * 2005-01-28 2006-08-03 Spansion Llc 不揮発性メモリ及びその制御方法
US7186607B2 (en) 2005-02-18 2007-03-06 Infineon Technologies Ag Charge-trapping memory device and method for production
JP2006302985A (ja) * 2005-04-18 2006-11-02 Renesas Technology Corp 不揮発性半導体装置の製造方法
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7226840B2 (en) * 2005-07-25 2007-06-05 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
KR100702029B1 (ko) * 2005-09-22 2007-03-30 삼성전자주식회사 플로팅된 드레인측 보조 게이트를 갖는 고전압 모스트랜지스터를 구비하는 비휘발성 메모리 소자들 및 그제조방법들
KR100687402B1 (ko) * 2005-11-21 2007-02-26 주식회사 하이닉스반도체 반도체 소자 및 그 제조방법
JP4906329B2 (ja) * 2005-12-02 2012-03-28 ラピスセミコンダクタ株式会社 不揮発性半導体記憶装置及びその製造方法
CA2633730C (en) * 2005-12-22 2014-09-09 Fmc Corporation Formulations of bifenthrin and enriched cypermethrin
US7482231B2 (en) * 2006-01-06 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing of memory array and periphery
US7405119B2 (en) * 2006-01-06 2008-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a sidewall SONOS memory device
US7482236B2 (en) * 2006-01-06 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for a sidewall SONOS memory device
US7973366B2 (en) * 2006-02-13 2011-07-05 Macronix International Co., Ltd. Dual-gate, sonos, non-volatile memory cells and arrays thereof
JP2007227851A (ja) * 2006-02-27 2007-09-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
JP4680116B2 (ja) * 2006-03-31 2011-05-11 Ｏｋｉセミコンダクタ株式会社 半導体装置
US8188536B2 (en) * 2006-06-26 2012-05-29 Macronix International Co., Ltd. Memory device and manufacturing method and operating method thereof
US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7651916B2 (en) * 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
KR100948294B1 (ko) * 2007-10-12 2010-03-17 주식회사 동부하이텍 반도체 소자의 제조방법
JP5404149B2 (ja) * 2009-04-16 2014-01-29 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR101133701B1 (ko) * 2010-09-10 2012-04-06 주식회사 하이닉스반도체 매립비트라인을 구비한 반도체장치 제조 방법
CN102655168A (zh) * 2011-03-04 2012-09-05 中国科学院微电子研究所 栅极结构及其制造方法
FR2985592B1 (fr) * 2012-01-09 2014-02-21 Commissariat Energie Atomique Procede de fabrication d'une cellule memoire non volatile a double grille
US9082651B2 (en) 2013-09-27 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of forming same
US9076681B2 (en) 2013-09-27 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same
US9559177B2 (en) 2013-12-03 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Memory devices and method of fabricating same
US9117754B2 (en) * 2014-01-30 2015-08-25 Freescale Semiconductor, Inc. Methods for extending floating gates for NVM cells to form sub-lithographic features and related NVM cells

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62291970A (ja) * 1986-06-12 1987-12-18 Sony Corp 半導体装置の製造方法
JPH05190863A (ja) * 1992-01-17 1993-07-30 Rohm Co Ltd 不揮発性メモリ
US5654568A (en) * 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
US5408115A (en) * 1994-04-04 1995-04-18 Motorola Inc. Self-aligned, split-gate EEPROM device
US6069382A (en) * 1998-02-11 2000-05-30 Cypress Semiconductor Corp. Non-volatile memory cell having a high coupling ratio
JP3973819B2 (ja) * 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
US6803620B2 (en) 2004-10-12
JP4904631B2 (ja) 2012-03-28
DE10194689B4 (de) 2011-07-28
US6858497B2 (en) 2005-02-22
DE10194689T1 (de) 2003-10-16
TW531882B (en) 2003-05-11
US20050020013A1 (en) 2005-01-27
JP2002203918A (ja) 2002-07-19
WO2002039502A1 (fr) 2002-05-16
US20030053345A1 (en) 2003-03-20

Similar Documents

Publication Publication Date Title
IL150407A0 (en) Non-volatile semiconductor memory device and a method of producing the same
IL150401A0 (en) Non-volatile semiconductor memory device and method for producing same
IL144959A0 (en) Nonvolatile semiconductor memory device and methods of operating and producing the same
SG118068A1 (en) Semiconductor device and manufacturing method thereof
SG112805A1 (en) Semiconductor device and manufacturing method thereof
IL156619A0 (en) Semiconductor device and its manufacturing method
SG100769A1 (en) Semiconductor device and method of manufacturing the same
EP1282133A4 (de) Halbleiterspeicher
HK1038439A1 (zh) 半導體器件及其制造方法
SG100696A1 (en) Semiconductor device and method for manufacturing same
GB2368983B (en) Non-volatile memory device
EP1310963A4 (de) Halbleiter-speicherbaustein
AU2002361667A8 (en) Non-volatile memory and method of forming thereof
EP1335425A4 (de) Halbleiterbauelement und sein produktionsverfahren
EP1263048A4 (de) Ferroelektrische speicheranordnung und ihre herstellungsmethode und hybrid-anordnung
GB2373906B (en) Semiconductor memory device
GB2371922B (en) Semiconductor device and method of forming a semiconductor device
GB2373635B (en) Semiconductor device and method of manufacturing the same
GB2374704B (en) Method and device for programming nonvolatile semiconductor memory
EP1329896A4 (de) Halbleiterspeicher und steuerverfahren
GB2374705B (en) Semiconductor memory device and manufacturing method thereof
EP1164640A4 (de) Halbleiterbauelement und dessen herstelllung
GB2374458B (en) Method of manufacturing a semiconductor device
GB2368725B (en) Semiconductor memory device and fabrication
EP1143453A4 (de) Halbleiter Speichereinrichtung