FR2824176B1 - Procede et dispositif de lecture de cellules de memoire dynamique - Google Patents

Procede et dispositif de lecture de cellules de memoire dynamique

Info

Publication number
FR2824176B1
FR2824176B1 FR0105814A FR0105814A FR2824176B1 FR 2824176 B1 FR2824176 B1 FR 2824176B1 FR 0105814 A FR0105814 A FR 0105814A FR 0105814 A FR0105814 A FR 0105814A FR 2824176 B1 FR2824176 B1 FR 2824176B1
Authority
FR
France
Prior art keywords
memory cells
dynamic memory
reading dynamic
reading
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0105814A
Other languages
English (en)
Other versions
FR2824176A1 (fr
Inventor
Francois Jacquet
Florent Vautrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0105814A priority Critical patent/FR2824176B1/fr
Priority to US10/135,981 priority patent/US6515930B2/en
Publication of FR2824176A1 publication Critical patent/FR2824176A1/fr
Application granted granted Critical
Publication of FR2824176B1 publication Critical patent/FR2824176B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
FR0105814A 2001-04-30 2001-04-30 Procede et dispositif de lecture de cellules de memoire dynamique Expired - Lifetime FR2824176B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0105814A FR2824176B1 (fr) 2001-04-30 2001-04-30 Procede et dispositif de lecture de cellules de memoire dynamique
US10/135,981 US6515930B2 (en) 2001-04-30 2002-04-29 Dram cell reading method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0105814A FR2824176B1 (fr) 2001-04-30 2001-04-30 Procede et dispositif de lecture de cellules de memoire dynamique

Publications (2)

Publication Number Publication Date
FR2824176A1 FR2824176A1 (fr) 2002-10-31
FR2824176B1 true FR2824176B1 (fr) 2003-10-31

Family

ID=8862857

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0105814A Expired - Lifetime FR2824176B1 (fr) 2001-04-30 2001-04-30 Procede et dispositif de lecture de cellules de memoire dynamique

Country Status (2)

Country Link
US (1) US6515930B2 (fr)
FR (1) FR2824176B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2819091B1 (fr) * 2000-12-29 2003-04-11 St Microelectronics Sa Rafraichissement de memoire dram
FR2820539B1 (fr) * 2001-02-02 2003-05-30 St Microelectronics Sa Procede et dispositif de rafraichissement de cellules de reference
FR2826772B1 (fr) * 2001-06-27 2005-03-04 St Microelectronics Sa Procede et circuit de rafaichissement de cellules de memoire dynamique
US6738301B2 (en) * 2002-08-29 2004-05-18 Micron Technology, Inc. Method and system for accelerating coupling of digital signals
DE10343172B4 (de) * 2003-09-18 2016-02-11 Robert Bosch Gmbh Datenübertragungsstrecke mit Einrichtung zur Prüfung der Datenintegrität
US7551508B2 (en) * 2007-11-16 2009-06-23 International Business Machines Corporation Energy efficient storage device using per-element selectable power supply voltages
US10255968B2 (en) * 2017-07-24 2019-04-09 Omnivision Technologies, Inc. DRAM core architecture with wide I/Os

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
JP4036487B2 (ja) * 1995-08-18 2008-01-23 株式会社ルネサステクノロジ 半導体記憶装置、および半導体回路装置
FR2773634B1 (fr) * 1998-01-15 2004-01-02 Sgs Thomson Microelectronics Amelioration des memoires a rafraichissement
FR2775382B1 (fr) * 1998-02-25 2001-10-05 St Microelectronics Sa Procede de controle du rafraichissement d'un plan memoire d'un dispositif de memoire vive dynamique, et dispositif de memoire vive correspondant
JP3797810B2 (ja) * 1998-11-30 2006-07-19 松下電器産業株式会社 半導体装置

Also Published As

Publication number Publication date
US6515930B2 (en) 2003-02-04
FR2824176A1 (fr) 2002-10-31
US20020159321A1 (en) 2002-10-31

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