FR2826772B1 - Procede et circuit de rafaichissement de cellules de memoire dynamique - Google Patents

Procede et circuit de rafaichissement de cellules de memoire dynamique

Info

Publication number
FR2826772B1
FR2826772B1 FR0108455A FR0108455A FR2826772B1 FR 2826772 B1 FR2826772 B1 FR 2826772B1 FR 0108455 A FR0108455 A FR 0108455A FR 0108455 A FR0108455 A FR 0108455A FR 2826772 B1 FR2826772 B1 FR 2826772B1
Authority
FR
France
Prior art keywords
circuit
memory cells
dynamic memory
enabling dynamic
enabling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0108455A
Other languages
English (en)
Other versions
FR2826772A1 (fr
Inventor
Richard Ferrant
Florent Vautrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0108455A priority Critical patent/FR2826772B1/fr
Priority to US10/186,289 priority patent/US6801467B2/en
Publication of FR2826772A1 publication Critical patent/FR2826772A1/fr
Application granted granted Critical
Publication of FR2826772B1 publication Critical patent/FR2826772B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
FR0108455A 2001-06-27 2001-06-27 Procede et circuit de rafaichissement de cellules de memoire dynamique Expired - Fee Related FR2826772B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0108455A FR2826772B1 (fr) 2001-06-27 2001-06-27 Procede et circuit de rafaichissement de cellules de memoire dynamique
US10/186,289 US6801467B2 (en) 2001-06-27 2002-06-27 DRAM cell refreshment method and circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0108455A FR2826772B1 (fr) 2001-06-27 2001-06-27 Procede et circuit de rafaichissement de cellules de memoire dynamique

Publications (2)

Publication Number Publication Date
FR2826772A1 FR2826772A1 (fr) 2003-01-03
FR2826772B1 true FR2826772B1 (fr) 2005-03-04

Family

ID=8864818

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0108455A Expired - Fee Related FR2826772B1 (fr) 2001-06-27 2001-06-27 Procede et circuit de rafaichissement de cellules de memoire dynamique

Country Status (2)

Country Link
US (1) US6801467B2 (fr)
FR (1) FR2826772B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579319B2 (en) * 2000-11-29 2003-06-17 Medicinelodge, Inc. Facet joint replacement
FR2819091B1 (fr) * 2000-12-29 2003-04-11 St Microelectronics Sa Rafraichissement de memoire dram
US6901339B2 (en) * 2003-07-29 2005-05-31 Agilent Technologies, Inc. Eye diagram analyzer correctly samples low dv/dt voltages
US7388248B2 (en) * 2004-09-01 2008-06-17 Micron Technology, Inc. Dielectric relaxation memory
US10796729B2 (en) * 2019-02-05 2020-10-06 Micron Technology, Inc. Dynamic allocation of a capacitive component in a memory device
US11194726B2 (en) 2019-02-25 2021-12-07 Micron Technology, Inc. Stacked memory dice for combined access operations

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4769792A (en) * 1986-10-28 1988-09-06 Kabushiki Kaisha Toshiba Semiconductor memory device with voltage bootstrap
US4805152A (en) * 1987-09-03 1989-02-14 National Semiconductor Corporation Refresh cell for a random access memory
US5262982A (en) * 1991-07-18 1993-11-16 National Semiconductor Corporation Nondestructive reading of a ferroelectric capacitor
FR2824176B1 (fr) * 2001-04-30 2003-10-31 St Microelectronics Sa Procede et dispositif de lecture de cellules de memoire dynamique

Also Published As

Publication number Publication date
US6801467B2 (en) 2004-10-05
US20030022427A1 (en) 2003-01-30
FR2826772A1 (fr) 2003-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20090228