NL1014455A1 - DRAM-celcondensator en vervaardigingswijze daarvan. - Google Patents

DRAM-celcondensator en vervaardigingswijze daarvan.

Info

Publication number
NL1014455A1
NL1014455A1 NL1014455A NL1014455A NL1014455A1 NL 1014455 A1 NL1014455 A1 NL 1014455A1 NL 1014455 A NL1014455 A NL 1014455A NL 1014455 A NL1014455 A NL 1014455A NL 1014455 A1 NL1014455 A1 NL 1014455A1
Authority
NL
Netherlands
Prior art keywords
manufacture
dram cell
cell capacitor
capacitor
dram
Prior art date
Application number
NL1014455A
Other languages
English (en)
Other versions
NL1014455C2 (nl
Inventor
Yoo Sang Hwang
Sang-Ho Song
Tae Young Chung
Byung Jun Park
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL1014455A1 publication Critical patent/NL1014455A1/nl
Application granted granted Critical
Publication of NL1014455C2 publication Critical patent/NL1014455C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
NL1014455A 1999-04-12 2000-02-21 DRAM-celcondensator en vervaardigingswijze daarvan. NL1014455C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR19990012801 1999-04-12
KR19990012801 1999-04-12
KR19990033767 1999-08-17
KR1019990033767A KR100308622B1 (ko) 1999-04-12 1999-08-17 디램 셀 캐패시터 및 제조 방법

Publications (2)

Publication Number Publication Date
NL1014455A1 true NL1014455A1 (nl) 2000-10-13
NL1014455C2 NL1014455C2 (nl) 2003-11-04

Family

ID=26634923

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1014455A NL1014455C2 (nl) 1999-04-12 2000-02-21 DRAM-celcondensator en vervaardigingswijze daarvan.

Country Status (6)

Country Link
US (2) US6479343B1 (nl)
JP (1) JP4900987B2 (nl)
KR (1) KR100308622B1 (nl)
DE (1) DE10007018B4 (nl)
GB (1) GB2349015B (nl)
NL (1) NL1014455C2 (nl)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100414730B1 (ko) * 2000-06-30 2004-01-13 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
KR100338958B1 (ko) * 2000-08-31 2002-06-01 박종섭 반도체 소자의 커패시터 형성 방법
KR100709448B1 (ko) * 2001-06-26 2007-04-18 주식회사 하이닉스반도체 반도체소자의 저장전극 형성방법
KR100702119B1 (ko) * 2001-06-30 2007-03-30 주식회사 하이닉스반도체 반도체소자의 본딩패드 및 그 제조방법
US6717193B2 (en) * 2001-10-09 2004-04-06 Koninklijke Philips Electronics N.V. Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
KR100442104B1 (ko) * 2001-12-27 2004-07-27 삼성전자주식회사 커패시터를 갖는 반도체 소자의 제조방법
KR100400327B1 (ko) * 2001-12-29 2003-10-01 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
JP2003297956A (ja) * 2002-04-04 2003-10-17 Toshiba Corp 半導体記憶装置及びその製造方法
KR100480601B1 (ko) * 2002-06-21 2005-04-06 삼성전자주식회사 반도체 메모리 소자 및 그 제조방법
KR100764336B1 (ko) * 2002-06-29 2007-10-05 주식회사 하이닉스반도체 반도체소자의 저장전극 및 그 제조방법
KR100505062B1 (ko) * 2003-02-22 2005-07-29 삼성전자주식회사 반도체 소자의 제조방법
KR100539272B1 (ko) * 2003-02-24 2005-12-27 삼성전자주식회사 반도체 장치 및 그 제조방법
KR100505675B1 (ko) * 2003-02-27 2005-08-03 삼성전자주식회사 전극 표면에 대한 다단계 습식 처리 과정을 도입한커패시터 제조 방법
US6872647B1 (en) * 2003-05-06 2005-03-29 Advanced Micro Devices, Inc. Method for forming multiple fins in a semiconductor device
KR100655751B1 (ko) * 2004-10-01 2006-12-11 삼성전자주식회사 반도체 장치의 제조 방법
KR100593746B1 (ko) * 2004-12-24 2006-06-28 삼성전자주식회사 디램의 커패시터들 및 그 형성방법들
US20060148168A1 (en) * 2005-01-06 2006-07-06 Sheng-Chin Li Process for fabricating dynamic random access memory
JP4569924B2 (ja) * 2005-04-08 2010-10-27 エルピーダメモリ株式会社 半導体装置の製造方法
JP4959979B2 (ja) * 2005-12-21 2012-06-27 エルピーダメモリ株式会社 半導体記憶装置の製造方法
JP4221421B2 (ja) * 2006-05-29 2009-02-12 エルピーダメモリ株式会社 半導体装置およびその製造方法
KR101168389B1 (ko) 2006-06-28 2012-07-25 에스케이하이닉스 주식회사 반도체 소자의 제조 방법
KR100716641B1 (ko) * 2006-06-29 2007-05-09 주식회사 하이닉스반도체 비정질카본층을 이용한 실린더형 캐패시터 제조 방법
JP4600836B2 (ja) * 2006-08-09 2010-12-22 エルピーダメモリ株式会社 半導体記憶装置の製造方法
JP2009016596A (ja) 2007-07-05 2009-01-22 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
TWI340435B (en) * 2007-07-11 2011-04-11 Nanya Technology Corp Dynamic random access memory with electrostatic discharge structure and method for manufacturing the same
JP2009164535A (ja) * 2008-01-10 2009-07-23 Elpida Memory Inc 半導体装置、及びその製造方法
US20100012996A1 (en) * 2008-07-16 2010-01-21 Promos Technologies Inc. Dynamic random access memory structure
KR20100095242A (ko) * 2009-02-20 2010-08-30 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2010287853A (ja) * 2009-06-15 2010-12-24 Elpida Memory Inc 半導体装置及びその製造方法
US8125049B2 (en) * 2009-11-16 2012-02-28 International Business Machines Corporation MIM capacitor structure in FEOL and related method
KR101810531B1 (ko) * 2011-11-23 2017-12-20 삼성전자 주식회사 반도체 장치 및 그 제조 방법
KR101917816B1 (ko) 2012-05-08 2019-01-29 에스케이하이닉스 주식회사 캐패시터 및 그 제조 방법
US9978829B2 (en) 2012-11-26 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Low impedance high density deep trench capacitor
US9178080B2 (en) * 2012-11-26 2015-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Deep trench structure for high density capacitor
CN103972153B (zh) * 2013-01-31 2016-08-24 华邦电子股份有限公司 接触孔插塞的制造方法
US9041154B2 (en) * 2013-03-06 2015-05-26 Nanya Technology Corp. Contact structure and semiconductor memory device using the same
JP2015084400A (ja) 2013-09-18 2015-04-30 マイクロン テクノロジー， インク． 半導体装置及びその製造方法
KR102246277B1 (ko) * 2014-03-14 2021-04-29 에스케이하이닉스 주식회사 반도체 소자 및 그 제조 방법
US9378778B1 (en) 2015-06-14 2016-06-28 Darryl G. Walker Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture
CN113496954B (zh) * 2020-04-08 2023-08-29 长鑫存储技术有限公司 存储器的形成方法及存储器
US11469140B2 (en) * 2020-08-25 2022-10-11 Nanya Technology Corporation Semiconductor device having a landing pad with spacers and method for fabricating the same
KR20230107027A (ko) 2022-01-07 2023-07-14 삼성전자주식회사 반도체 소자
US20230337424A1 (en) * 2022-04-15 2023-10-19 Winbond Electronics Corp. Memory device and method of manufacturing the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162249A (en) * 1989-04-03 1992-11-10 Hyundai Electronics Industries Co., Ltd. Method of making semiconductor memory device having a double stacked capacitor
US5114873A (en) * 1990-05-21 1992-05-19 Samsung Electronics Co., Ltd. Method for manufacturing a stacked capacitor DRAM cell
US5126280A (en) * 1991-02-08 1992-06-30 Micron Technology, Inc. Stacked multi-poly spacers with double cell plate capacitor
JPH0777237B2 (ja) * 1993-01-04 1995-08-16 日本電気株式会社 半導体記憶装置及びその製造方法
US5480820A (en) * 1993-03-29 1996-01-02 Motorola, Inc. Method of making a vertically formed neuron transistor having a floating gate and a control gate and a method of formation
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
US5498889A (en) * 1993-11-29 1996-03-12 Motorola, Inc. Semiconductor device having increased capacitance and method for making the same
JPH1093042A (ja) * 1996-09-13 1998-04-10 Fujitsu Ltd 半導体装置及びその製造方法
ATE213873T1 (de) * 1995-04-24 2002-03-15 Infineon Technologies Ag Halbleiter-speichervorrichtung unter verwendung eines ferroelektrischen dielektrikums und verfahren zur herstellung
KR0147655B1 (ko) * 1995-07-13 1998-08-01 김광호 반도체 장치의 캐패시터 제조방법
US5793076A (en) * 1995-09-21 1998-08-11 Micron Technology, Inc. Scalable high dielectric constant capacitor
US5633781A (en) * 1995-12-22 1997-05-27 International Business Machines Corporation Isolated sidewall capacitor having a compound plate electrode
KR0186069B1 (ko) * 1995-12-28 1999-03-20 문정환 스택형 디램 셀의 캐패시터 제조방법
KR100215867B1 (ko) * 1996-04-12 1999-08-16 구본준 반도체 소자의 커패시터 구조 및 제조 방법
US6033919A (en) * 1996-10-25 2000-03-07 Texas Instruments Incorporated Method of forming sidewall capacitance structure
JPH10173148A (ja) * 1996-12-13 1998-06-26 Hitachi Ltd 半導体記憶装置
JP3608324B2 (ja) * 1996-12-27 2005-01-12 ソニー株式会社 半導体記憶装置の製造方法
KR100258578B1 (ko) * 1998-01-15 2000-06-15 윤종용 반도체 메모리 장치의 콘택 형성 방법
KR100266898B1 (ko) * 1998-03-27 2000-10-02 윤종용 디램 셀 캐패시터의 제조 방법
US5837577A (en) * 1998-04-24 1998-11-17 Vanguard International Semiconductor Corporation Method for making self-aligned node contacts to bit lines for capacitor-over-bit-line structures on dynamic random access memory (DRAM) devices
US6188100B1 (en) * 1998-08-19 2001-02-13 Micron Technology, Inc. Concentric container fin capacitor
KR100433509B1 (ko) * 1998-08-21 2004-05-31 미크론 테크놀로지,인코포레이티드 전계 효과 트랜지스터, 집적 회로, 전계 효과 트랜지스터 형성 방법, 그리고 집적 회로 형성 방법
US6124164A (en) * 1998-09-17 2000-09-26 Micron Technology, Inc. Method of making integrated capacitor incorporating high K dielectric
KR100343291B1 (ko) * 1999-11-05 2002-07-15 윤종용 반도체 장치의 커패시터 형성 방법
US6362012B1 (en) * 2001-03-05 2002-03-26 Taiwan Semiconductor Manufacturing Company Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications

Also Published As

Publication number Publication date
KR20000067767A (ko) 2000-11-25
JP4900987B2 (ja) 2012-03-21
DE10007018B4 (de) 2011-12-22
GB2349015A (en) 2000-10-18
US20030008469A1 (en) 2003-01-09
DE10007018A1 (de) 2000-10-19
GB0004163D0 (en) 2000-04-12
US6479343B1 (en) 2002-11-12
US6670663B2 (en) 2003-12-30
JP2000299448A (ja) 2000-10-24
GB2349015B (en) 2003-12-31
KR100308622B1 (ko) 2001-11-01
NL1014455C2 (nl) 2003-11-04

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Effective date: 20030902

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