DE60306087D1 - Magnetischer Direktzugriffspeicher und Datenausleseverfahren - Google Patents

Magnetischer Direktzugriffspeicher und Datenausleseverfahren

Info

Publication number
DE60306087D1
DE60306087D1 DE60306087T DE60306087T DE60306087D1 DE 60306087 D1 DE60306087 D1 DE 60306087D1 DE 60306087 T DE60306087 T DE 60306087T DE 60306087 T DE60306087 T DE 60306087T DE 60306087 D1 DE60306087 D1 DE 60306087D1
Authority
DE
Germany
Prior art keywords
random access
access memory
magnetic random
data readout
readout method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60306087T
Other languages
English (en)
Other versions
DE60306087T2 (de
Inventor
Yoshihisa Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60306087D1 publication Critical patent/DE60306087D1/de
Publication of DE60306087T2 publication Critical patent/DE60306087T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
DE60306087T 2002-12-25 2003-05-07 Magnetischer Direktzugriffspeicher und Datenausleseverfahren Expired - Lifetime DE60306087T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002374716A JP3766380B2 (ja) 2002-12-25 2002-12-25 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法
JP2002374716 2002-12-25

Publications (2)

Publication Number Publication Date
DE60306087D1 true DE60306087D1 (de) 2006-07-27
DE60306087T2 DE60306087T2 (de) 2007-01-04

Family

ID=32463545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60306087T Expired - Lifetime DE60306087T2 (de) 2002-12-25 2003-05-07 Magnetischer Direktzugriffspeicher und Datenausleseverfahren

Country Status (7)

Country Link
US (1) US6961261B2 (de)
EP (1) EP1434231B1 (de)
JP (1) JP3766380B2 (de)
KR (1) KR100598762B1 (de)
CN (1) CN1305140C (de)
DE (1) DE60306087T2 (de)
TW (1) TWI235476B (de)

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JP4528660B2 (ja) * 2005-03-31 2010-08-18 株式会社東芝 スピン注入ｆｅｔ
JP5067650B2 (ja) 2006-01-06 2012-11-07 日本電気株式会社 半導体記憶装置
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JP5045672B2 (ja) 2006-06-08 2012-10-10 日本電気株式会社 ２ｔ２ｍｔｊセルを用いたｍｒａｍ
US8693238B2 (en) 2006-08-07 2014-04-08 Nec Corporation MRAM having variable word line drive potential
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KR100855965B1 (ko) * 2007-01-04 2008-09-02 삼성전자주식회사 서브 셀 어레이를 구비하는 양방향성 ｒｒａｍ 및 이를이용하는 데이터 기입 방법
US8009467B2 (en) 2007-05-29 2011-08-30 Nec Corporation Magnetic random access memory
JP2009054788A (ja) * 2007-08-27 2009-03-12 Renesas Technology Corp 半導体装置
US7804710B2 (en) * 2008-03-31 2010-09-28 International Business Machines Corporation Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory
KR101562969B1 (ko) * 2009-03-03 2015-10-26 삼성전자주식회사 반도체 장치
US8344433B2 (en) * 2009-04-14 2013-01-01 Qualcomm Incorporated Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
KR101053537B1 (ko) * 2009-10-30 2011-08-03 주식회사 하이닉스반도체 데이터 입출력 회로 및 이를 포함하는 반도체 메모리 장치
US8213242B2 (en) * 2010-09-23 2012-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cells having a row-based read and/or write support circuitry
KR101298190B1 (ko) * 2011-10-13 2013-08-20 에스케이하이닉스 주식회사 저항성 메모리 장치, 그 레이아웃 구조 및 센싱 회로
EP2597692A1 (de) * 2011-11-22 2013-05-29 Crocus Technology S.A. Selbstreferenzierte MRAM-Zelle mit optimierter Zuverlässigkeit
US9165631B2 (en) 2012-09-13 2015-10-20 Qualcomm Incorporated OTP scheme with multiple magnetic tunnel junction devices in a cell
US9230629B2 (en) * 2013-09-06 2016-01-05 Kabushiki Kaisha Toshiba Semiconductor storage device
JP2015185179A (ja) 2014-03-20 2015-10-22 株式会社東芝 抵抗変化メモリ
KR102235043B1 (ko) * 2014-06-09 2021-04-05 삼성전자주식회사 반도체 메모리 장치
JP2017147005A (ja) 2016-02-16 2017-08-24 ルネサスエレクトロニクス株式会社 フラッシュメモリ

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JP3672803B2 (ja) * 2000-07-28 2005-07-20 Ｎｅｃエレクトロニクス株式会社 不揮発性記憶装置
US6272041B1 (en) * 2000-08-28 2001-08-07 Motorola, Inc. MTJ MRAM parallel-parallel architecture
US6365419B1 (en) * 2000-08-28 2002-04-02 Motorola, Inc. High density MRAM cell array
US6331943B1 (en) * 2000-08-28 2001-12-18 Motorola, Inc. MTJ MRAM series-parallel architecture
US6317375B1 (en) * 2000-08-31 2001-11-13 Hewlett-Packard Company Method and apparatus for reading memory cells of a resistive cross point array
DE10043440C2 (de) * 2000-09-04 2002-08-29 Infineon Technologies Ag Magnetoresistiver Speicher und Verfahren zu seinem Auslesen
US6324093B1 (en) * 2000-09-15 2001-11-27 Hewlett-Packard Company Write-once thin-film memory
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
JP4149647B2 (ja) * 2000-09-28 2008-09-10 株式会社東芝 半導体記憶装置及びその製造方法
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DE10056830C2 (de) * 2000-11-16 2002-10-24 Infineon Technologies Ag Integrierte magnetoresistive Halbleiterspeicheranordnung
JP4948700B2 (ja) 2000-12-07 2012-06-06 アール・ビー・コントロールズ株式会社 ガス器具の集中管理システム
US6356477B1 (en) * 2001-01-29 2002-03-12 Hewlett Packard Company Cross point memory array including shared devices for blocking sneak path currents
JP3677455B2 (ja) * 2001-02-13 2005-08-03 Ｎｅｃエレクトロニクス株式会社 不揮発性磁気記憶装置およびその製造方法
US6456524B1 (en) * 2001-10-31 2002-09-24 Hewlett-Packard Company Hybrid resistive cross point memory cell arrays and methods of making the same
US6944048B2 (en) * 2001-11-29 2005-09-13 Kabushiki Kaisha Toshiba Magnetic random access memory
EP1321944B1 (de) * 2001-12-21 2008-07-30 Kabushiki Kaisha Toshiba Magnetischer Direktzugriffsspeicher
EP1321941B1 (de) * 2001-12-21 2005-08-17 Kabushiki Kaisha Toshiba MRAM mit gestapelten Speicherzellen
US6795334B2 (en) * 2001-12-21 2004-09-21 Kabushiki Kaisha Toshiba Magnetic random access memory
US6839269B2 (en) * 2001-12-28 2005-01-04 Kabushiki Kaisha Toshiba Magnetic random access memory
US6912152B2 (en) * 2002-02-22 2005-06-28 Kabushiki Kaisha Toshiba Magnetic random access memory
JP2004213771A (ja) * 2002-12-27 2004-07-29 Toshiba Corp 磁気ランダムアクセスメモリ

Also Published As

Publication number Publication date
DE60306087T2 (de) 2007-01-04
CN1305140C (zh) 2007-03-14
EP1434231A2 (de) 2004-06-30
US6961261B2 (en) 2005-11-01
JP2004206796A (ja) 2004-07-22
TWI235476B (en) 2005-07-01
EP1434231A3 (de) 2004-09-01
JP3766380B2 (ja) 2006-04-12
KR20040058072A (ko) 2004-07-03
KR100598762B1 (ko) 2006-07-12
US20040125648A1 (en) 2004-07-01
EP1434231B1 (de) 2006-06-14
CN1534604A (zh) 2004-10-06
TW200415777A (en) 2004-08-16

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