DE60303835D1 - Magnetischer Direktzugriffsspeicher sowie entsprechendes Leseverfahren - Google Patents

Magnetischer Direktzugriffsspeicher sowie entsprechendes Leseverfahren

Info

Publication number
DE60303835D1
DE60303835D1 DE60303835T DE60303835T DE60303835D1 DE 60303835 D1 DE60303835 D1 DE 60303835D1 DE 60303835 T DE60303835 T DE 60303835T DE 60303835 T DE60303835 T DE 60303835T DE 60303835 D1 DE60303835 D1 DE 60303835D1
Authority
DE
Germany
Prior art keywords
random access
access memory
reading method
magnetic random
corresponding reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60303835T
Other languages
English (en)
Other versions
DE60303835T2 (de
Inventor
Kenji Tsuchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60303835D1 publication Critical patent/DE60303835D1/de
Publication of DE60303835T2 publication Critical patent/DE60303835T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05B—LOCKS; ACCESSORIES THEREFOR; HANDCUFFS
    • E05B15/00—Other details of locks; Parts for engagement by bolts of fastening devices
    • E05B15/0053—Other details of locks; Parts for engagement by bolts of fastening devices means providing a stable, i.e. indexed, position of lock parts
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
    • E05Y2900/00—Application of doors, windows, wings or fittings thereof
    • E05Y2900/50—Application of doors, windows, wings or fittings thereof for vehicles
    • E05Y2900/516—Application of doors, windows, wings or fittings thereof for vehicles for trucks or trailers
    • E—FIXED CONSTRUCTIONS
    • E05—LOCKS; KEYS; WINDOW OR DOOR FITTINGS; SAFES
    • E05Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES E05D AND E05F, RELATING TO CONSTRUCTION ELEMENTS, ELECTRIC CONTROL, POWER SUPPLY, POWER SIGNAL OR TRANSMISSION, USER INTERFACES, MOUNTING OR COUPLING, DETAILS, ACCESSORIES, AUXILIARY OPERATIONS NOT OTHERWISE PROVIDED FOR, APPLICATION THEREOF
    • E05Y2900/00—Application of doors, windows, wings or fittings thereof
    • E05Y2900/50—Application of doors, windows, wings or fittings thereof for vehicles
    • E05Y2900/53—Type of wing
    • E05Y2900/531—Doors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE60303835T 2003-02-17 2003-04-16 Magnetischer Direktzugriffsspeicher sowie entsprechendes Leseverfahren Expired - Lifetime DE60303835T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003038723A JP3704128B2 (ja) 2003-02-17 2003-02-17 磁気ランダムアクセスメモリとその読み出し方法
JP2003038723 2003-02-17

Publications (2)

Publication Number Publication Date
DE60303835D1 true DE60303835D1 (de) 2006-05-04
DE60303835T2 DE60303835T2 (de) 2006-10-05

Family

ID=32677665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60303835T Expired - Lifetime DE60303835T2 (de) 2003-02-17 2003-04-16 Magnetischer Direktzugriffsspeicher sowie entsprechendes Leseverfahren

Country Status (7)

Country Link
US (1) US6807088B2 (de)
EP (1) EP1447810B1 (de)
JP (1) JP3704128B2 (de)
KR (1) KR100592458B1 (de)
CN (1) CN1534681B (de)
DE (1) DE60303835T2 (de)
TW (1) TWI268634B (de)

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US7009235B2 (en) * 2003-11-10 2006-03-07 Unity Semiconductor Corporation Conductive memory stack with non-uniform width
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US7057914B2 (en) * 2002-08-02 2006-06-06 Unity Semiconductor Corporation Cross point memory array with fast access time
US6970375B2 (en) * 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US6940744B2 (en) * 2002-10-31 2005-09-06 Unity Semiconductor Corporation Adaptive programming technique for a re-writable conductive memory device
US7309616B2 (en) * 2003-03-13 2007-12-18 Unity Semiconductor Corporation Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US6842364B1 (en) * 2003-07-07 2005-01-11 Hewlett-Packard Development Company, L.P. Memory cell strings in a resistive cross point memory cell array
US7095644B2 (en) * 2003-12-22 2006-08-22 Unity Semiconductor Corporation Conductive memory array having page mode and burst mode read capability
US7099179B2 (en) * 2003-12-22 2006-08-29 Unity Semiconductor Corporation Conductive memory array having page mode and burst mode write capability
US7538338B2 (en) * 2004-09-03 2009-05-26 Unity Semiconductor Corporation Memory using variable tunnel barrier widths
US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
US20060171200A1 (en) 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7075817B2 (en) 2004-07-20 2006-07-11 Unity Semiconductor Corporation Two terminal memory array having reference cells
US7464621B2 (en) * 2004-11-09 2008-12-16 Steeda Autosports, Inc. Longitudinally displaced shifter
US7327600B2 (en) * 2004-12-23 2008-02-05 Unity Semiconductor Corporation Storage controller for multiple configurations of vertical memory
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US7577018B2 (en) * 2006-03-07 2009-08-18 Tdk Corporation Readout circuit of magnetic memory
US7522468B2 (en) * 2006-06-08 2009-04-21 Unity Semiconductor Corporation Serial memory interface
US7747817B2 (en) * 2006-06-28 2010-06-29 Unity Semiconductor Corporation Performing data operations using non-volatile third dimension memory
US7619945B2 (en) * 2006-08-18 2009-11-17 Unity Semiconductor Corporation Memory power management
US7539811B2 (en) 2006-10-05 2009-05-26 Unity Semiconductor Corporation Scaleable memory systems using third dimension memory
US7379364B2 (en) * 2006-10-19 2008-05-27 Unity Semiconductor Corporation Sensing a signal in a two-terminal memory array having leakage current
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
US7453740B2 (en) 2007-01-19 2008-11-18 International Business Machines Corporation Method and apparatus for initializing reference cells of a toggle switched MRAM device
US7765380B2 (en) * 2007-01-19 2010-07-27 Unity Semiconductor Corporation Fast data access through page manipulation
US7596045B2 (en) * 2007-10-31 2009-09-29 International Business Machines Corporation Design structure for initializing reference cells of a toggle switched MRAM device
US7941713B2 (en) * 2008-08-27 2011-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable self-test for random access memories
US7936590B2 (en) * 2008-12-08 2011-05-03 Qualcomm Incorporated Digitally-controllable delay for sense amplifier
CN101783165A (zh) * 2010-03-26 2010-07-21 上海宏力半导体制造有限公司 一种半导体存储器、半导体存储器系统及其对应编程方法
JP5138836B2 (ja) * 2011-04-13 2013-02-06 パナソニック株式会社 参照セル回路とそれを用いた抵抗変化型不揮発性記憶装置
CN102290102B (zh) * 2011-07-15 2013-07-17 宁波大学 一种三值绝热存储器
US8509003B2 (en) * 2011-09-20 2013-08-13 Taiwan Semiconductor Manufacturing Co., Ltd. Read architecture for MRAM
US9183910B2 (en) 2012-05-31 2015-11-10 Samsung Electronics Co., Ltd. Semiconductor memory devices for alternately selecting bit lines
KR20130139066A (ko) 2012-06-12 2013-12-20 삼성전자주식회사 소스라인 전압 발생기를 포함하는 자기 저항 메모리 장치
US8891326B1 (en) * 2013-09-11 2014-11-18 Avalanche Technology, Inc. Method of sensing data in magnetic random access memory with overlap of high and low resistance distributions
US9478308B1 (en) * 2015-05-26 2016-10-25 Intel IP Corporation Programmable memory device sense amplifier
JP2017162535A (ja) * 2016-03-11 2017-09-14 ソニー株式会社 記憶装置、情報処理装置、および、記憶装置の制御方法
JP6477752B2 (ja) * 2017-03-13 2019-03-06 Tdk株式会社 磁気センサ
CN110097904B (zh) * 2018-01-30 2022-02-22 上海磁宇信息科技有限公司 使用打磨参考单元的mram电路及其读写方法
US11139012B2 (en) * 2019-03-28 2021-10-05 Samsung Electronics Co., Ltd. Resistive memory device having read currents for a memory cell and a reference cell in opposite directions
CN112712835B (zh) * 2019-10-25 2024-07-26 长鑫存储技术(上海)有限公司 读操作电路、半导体存储器和读操作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US134138A (en) * 1872-12-24 Improvement in rotary puddling-furnaces
US5852574A (en) * 1997-12-24 1998-12-22 Motorola, Inc. High density magnetoresistive random access memory device and operating method thereof
US6134138A (en) 1999-07-30 2000-10-17 Honeywell Inc. Method and apparatus for reading a magnetoresistive memory
JP3985432B2 (ja) * 2000-06-19 2007-10-03 日本電気株式会社 磁気ランダムアクセスメモリ
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP4667594B2 (ja) * 2000-12-25 2011-04-13 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
JP3920565B2 (ja) * 2000-12-26 2007-05-30 株式会社東芝 磁気ランダムアクセスメモリ
US6501697B1 (en) * 2001-10-11 2002-12-31 Hewlett-Packard Company High density memory sense amplifier

Also Published As

Publication number Publication date
CN1534681B (zh) 2010-05-26
JP3704128B2 (ja) 2005-10-05
KR100592458B1 (ko) 2006-06-22
TW200421645A (en) 2004-10-16
EP1447810B1 (de) 2006-03-08
KR20040074968A (ko) 2004-08-26
DE60303835T2 (de) 2006-10-05
JP2004247018A (ja) 2004-09-02
CN1534681A (zh) 2004-10-06
US20040160811A1 (en) 2004-08-19
EP1447810A1 (de) 2004-08-18
US6807088B2 (en) 2004-10-19
TWI268634B (en) 2006-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition