DE60023408D1 - Magnetische Direktzugriffspeicheranordnung - Google Patents

Magnetische Direktzugriffspeicheranordnung

Info

Publication number
DE60023408D1
DE60023408D1 DE60023408T DE60023408T DE60023408D1 DE 60023408 D1 DE60023408 D1 DE 60023408D1 DE 60023408 T DE60023408 T DE 60023408T DE 60023408 T DE60023408 T DE 60023408T DE 60023408 D1 DE60023408 D1 DE 60023408D1
Authority
DE
Germany
Prior art keywords
memory device
random access
access memory
magnetic random
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60023408T
Other languages
English (en)
Other versions
DE60023408T2 (de
Inventor
Lung T Tran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE60023408D1 publication Critical patent/DE60023408D1/de
Publication of DE60023408T2 publication Critical patent/DE60023408T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
DE60023408T 1999-08-06 2000-07-24 Magnetische Direktzugriffspeicheranordnung Expired - Lifetime DE60023408T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/370,087 US6163477A (en) 1999-08-06 1999-08-06 MRAM device using magnetic field bias to improve reproducibility of memory cell switching

Publications (2)

Publication Number Publication Date
DE60023408D1 true DE60023408D1 (de) 2005-12-01
DE60023408T2 DE60023408T2 (de) 2006-06-14

Family

ID=23458166

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60023408T Expired - Lifetime DE60023408T2 (de) 1999-08-06 2000-07-24 Magnetische Direktzugriffspeicheranordnung

Country Status (4)

Country Link
US (1) US6163477A (de)
EP (1) EP1074992B1 (de)
JP (1) JP2001084757A (de)
DE (1) DE60023408T2 (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW416057B (en) * 1997-09-17 2000-12-21 Siemens Ag Memory-cell device and its production method
US6272040B1 (en) * 2000-09-29 2001-08-07 Motorola, Inc. System and method for programming a magnetoresistive memory device
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
US6538919B1 (en) 2000-11-08 2003-03-25 International Business Machines Corporation Magnetic tunnel junctions using ferrimagnetic materials
US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
US6603678B2 (en) * 2001-01-11 2003-08-05 Hewlett-Packard Development Company, L.P. Thermally-assisted switching of magnetic memory elements
US6594176B2 (en) * 2001-01-24 2003-07-15 Infineon Technologies Ag Current source and drain arrangement for magnetoresistive memories (MRAMs)
JP3677455B2 (ja) * 2001-02-13 2005-08-03 Ｎｅｃエレクトロニクス株式会社 不揮発性磁気記憶装置およびその製造方法
US6466471B1 (en) * 2001-05-29 2002-10-15 Hewlett-Packard Company Low power MRAM memory array
US6430084B1 (en) * 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer
US6597597B2 (en) * 2001-11-13 2003-07-22 Hewlett-Packard Company Low temperature attaching process for MRAM components
US6781578B2 (en) * 2002-01-02 2004-08-24 Hewlett-Packard Development Company, L.P. Stylus based input devices utilizing a magnetic random access momory array
US6643195B2 (en) 2002-01-11 2003-11-04 Hewlett-Packard Development Company, Lp. Self-healing MRAM
US6689622B1 (en) 2002-04-26 2004-02-10 Micron Technology, Inc. Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication
JP3808799B2 (ja) * 2002-05-15 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
US6522577B1 (en) * 2002-06-05 2003-02-18 Micron Technology, Inc. System and method for enabling chip level erasing and writing for magnetic random access memory devices
US6778433B1 (en) 2002-06-06 2004-08-17 Taiwan Semiconductor Manufacturing Company High programming efficiency MRAM cell structure
JP3808802B2 (ja) * 2002-06-20 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
US6891193B1 (en) * 2002-06-28 2005-05-10 Silicon Magnetic Systems MRAM field-inducing layer configuration
US6621730B1 (en) * 2002-08-27 2003-09-16 Motorola, Inc. Magnetic random access memory having a vertical write line
US6809958B2 (en) 2002-09-13 2004-10-26 Hewlett-Packard Development Company, L.P. MRAM parallel conductor orientation for improved write performance
US7411814B2 (en) * 2002-10-03 2008-08-12 Koninklijke Philips Electronics N.V. Programmable magnetic memory device FP-MRAM
US6791868B2 (en) * 2003-01-02 2004-09-14 International Business Machines Corporation Ferromagnetic resonance switching for magnetic random access memory
US6952364B2 (en) * 2003-03-03 2005-10-04 Samsung Electronics Co., Ltd. Magnetic tunnel junction structures and methods of fabrication
KR100615600B1 (ko) * 2004-08-09 2006-08-25 삼성전자주식회사 고집적 자기램 소자 및 그 제조방법
JP3908685B2 (ja) * 2003-04-04 2007-04-25 株式会社東芝 磁気ランダムアクセスメモリおよびその書き込み方法
KR100988081B1 (ko) * 2003-04-23 2010-10-18 삼성전자주식회사 이종방식으로 형성된 중간 산화막을 구비하는 자기 램 및그 제조 방법
JP3813942B2 (ja) 2003-04-25 2006-08-23 株式会社東芝 磁気ランダムアクセスメモリ
US7020009B2 (en) * 2003-05-14 2006-03-28 Macronix International Co., Ltd. Bistable magnetic device using soft magnetic intermediary material
US20050013181A1 (en) * 2003-07-17 2005-01-20 Adelmann Todd C. Assisted memory device with integrated cache
US6865105B1 (en) 2003-09-22 2005-03-08 Hewlett-Packard Development Company, L.P. Thermal-assisted switching array configuration for MRAM
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
KR100615089B1 (ko) * 2004-07-14 2006-08-23 삼성전자주식회사 낮은 구동 전류를 갖는 자기 램
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
US6987692B2 (en) * 2003-10-03 2006-01-17 Hewlett-Packard Development Company, L.P. Magnetic memory having angled third conductor
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers
US7256955B2 (en) * 2004-03-17 2007-08-14 Seagate Technology Llc High frequency assisted writing
US7532203B2 (en) * 2004-04-26 2009-05-12 Samsung Electronic Co., Ltd. Data input device that utilizes a layer of magnetic particles to store non-volatile input data that is magnetically coupled to an underlying MRAM array
US7057920B2 (en) * 2004-04-26 2006-06-06 Hewlett-Packard Development Company, L.P. Two conductor thermally assisted magnetic memory
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
US7123507B2 (en) * 2004-08-19 2006-10-17 International Business Machines Corporation Using permanent magnets in MRAM to assist write operation
US7397074B2 (en) * 2005-01-12 2008-07-08 Samsung Electronics Co., Ltd. RF field heated diodes for providing thermally assisted switching to magnetic memory elements
US7285836B2 (en) * 2005-03-09 2007-10-23 Maglabs, Inc. Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
TWI320930B (en) * 2007-01-29 2010-02-21 Ind Tech Res Inst Direct writing method on magnetic memory cell and magetic memory cell structure
US7447061B1 (en) * 2007-03-02 2008-11-04 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive memory array circuit
JP5751124B2 (ja) * 2011-10-19 2015-07-22 富士通株式会社 メモリ装置
US9196334B2 (en) 2012-04-19 2015-11-24 Qualcomm Incorporated Hierarchical memory magnetoresistive random-access memory (MRAM) architecture
US9368232B2 (en) 2013-03-07 2016-06-14 Qualcomm Incorporated Magnetic automatic test equipment (ATE) memory tester device and method employing temperature control
US10868241B2 (en) 2019-05-16 2020-12-15 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for polarizing a semiconductor wafer and method for fabricating a magnetic semiconductor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420819A (en) * 1992-09-24 1995-05-30 Nonvolatile Electronics, Incorporated Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5748524A (en) * 1996-09-23 1998-05-05 Motorola, Inc. MRAM with pinned ends
US5838608A (en) * 1997-06-16 1998-11-17 Motorola, Inc. Multi-layer magnetic random access memory and method for fabricating thereof
US5946228A (en) * 1998-02-10 1999-08-31 International Business Machines Corporation Limiting magnetic writing fields to a preferred portion of a changeable magnetic region in magnetic devices
US6081445A (en) * 1998-07-27 2000-06-27 Motorola, Inc. Method to write/read MRAM arrays
US5982660A (en) * 1998-08-27 1999-11-09 Hewlett-Packard Company Magnetic memory cell with off-axis reference layer orientation for improved response
US6072717A (en) * 1998-09-04 2000-06-06 Hewlett Packard Stabilized magnetic memory cell

Also Published As

Publication number Publication date
JP2001084757A (ja) 2001-03-30
EP1074992B1 (de) 2005-10-26
EP1074992A1 (de) 2001-02-07
US6163477A (en) 2000-12-19
DE60023408T2 (de) 2006-06-14

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., HOUSTON

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR