DE60104385D1 - Magnetischer Direktzugriffspeicher mit verbesserterDurchbruchspannung - Google Patents

Magnetischer Direktzugriffspeicher mit verbesserterDurchbruchspannung

Info

Publication number
DE60104385D1
DE60104385D1 DE60104385T DE60104385T DE60104385D1 DE 60104385 D1 DE60104385 D1 DE 60104385D1 DE 60104385 T DE60104385 T DE 60104385T DE 60104385 T DE60104385 T DE 60104385T DE 60104385 D1 DE60104385 D1 DE 60104385D1
Authority
DE
Germany
Prior art keywords
random access
access memory
breakdown voltage
magnetic random
improved breakdown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60104385T
Other languages
English (en)
Other versions
DE60104385T2 (de
Inventor
Janice H Nickel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE60104385D1 publication Critical patent/DE60104385D1/de
Publication of DE60104385T2 publication Critical patent/DE60104385T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
DE60104385T 2000-11-18 2001-10-31 Magnetischer Direktzugriffspeicher mit verbesserterDurchbruchspannung Expired - Lifetime DE60104385T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/715,476 US6429497B1 (en) 2000-11-18 2000-11-18 Method for improving breakdown voltage in magnetic tunnel junctions
US715476 2000-11-18

Publications (2)

Publication Number Publication Date
DE60104385D1 true DE60104385D1 (de) 2004-08-26
DE60104385T2 DE60104385T2 (de) 2005-07-21

Family

ID=24874200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60104385T Expired - Lifetime DE60104385T2 (de) 2000-11-18 2001-10-31 Magnetischer Direktzugriffspeicher mit verbesserterDurchbruchspannung

Country Status (8)

Country Link
US (1) US6429497B1 (de)
EP (1) EP1207538B1 (de)
JP (1) JP2002208683A (de)
KR (1) KR20020038919A (de)
CN (1) CN1354519A (de)
DE (1) DE60104385T2 (de)
HK (1) HK1046775A1 (de)
TW (1) TW512337B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632517B1 (en) * 2000-08-21 2003-10-14 University Of New Orleans Research And Technology Foundation, Inc. Low field magnetoresistance of intergranular tunneling in field-aligned chromium dioxide powders
US6771473B2 (en) * 2001-01-22 2004-08-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and method for producing the same
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
US6770521B2 (en) * 2001-11-30 2004-08-03 Texas Instruments Incorporated Method of making multiple work function gates by implanting metals with metallic alloying additives
US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer
KR100604752B1 (ko) * 2002-07-18 2006-07-26 주식회사 하이닉스반도체 마그네틱 램의 제조방법
KR100513722B1 (ko) * 2002-11-15 2005-09-08 삼성전자주식회사 자기터널접합소자 및 그 제조방법
US6818549B2 (en) * 2003-03-05 2004-11-16 Hewlett-Packard Development Company, L.P. Buried magnetic tunnel-junction memory cell and methods
US6858883B2 (en) * 2003-06-03 2005-02-22 Hewlett-Packard Development Company, L.P. Partially processed tunnel junction control element
US7274080B1 (en) 2003-08-22 2007-09-25 International Business Machines Corporation MgO-based tunnel spin injectors
US7598555B1 (en) 2003-08-22 2009-10-06 International Business Machines Corporation MgO tunnel barriers and method of formation
US7252852B1 (en) 2003-12-12 2007-08-07 International Business Machines Corporation Mg-Zn oxide tunnel barriers and method of formation
KR100593448B1 (ko) * 2004-09-10 2006-06-28 삼성전자주식회사 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들
US7443639B2 (en) * 2005-04-04 2008-10-28 International Business Machines Corporation Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials
US8679301B2 (en) * 2007-08-01 2014-03-25 HGST Netherlands B.V. Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
US7868404B2 (en) * 2007-11-01 2011-01-11 Nve Corporation Vortex spin momentum transfer magnetoresistive device
US20150037613A1 (en) * 2013-07-30 2015-02-05 Seagate Technology Llc Magnetic devices with overcoats
KR101661275B1 (ko) * 2014-04-18 2016-09-29 한양대학교 산학협력단 메모리 소자
US10304482B2 (en) 2015-03-22 2019-05-28 Seagate Technology Llc Devices including an overcoat layer
CN112490352B (zh) * 2019-09-11 2023-10-27 上海磁宇信息科技有限公司 磁性随机存储器的磁性隧道结结构

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US6110751A (en) * 1997-01-10 2000-08-29 Fujitsu Limited Tunnel junction structure and its manufacture and magnetic sensor
JP2871670B1 (ja) * 1997-03-26 1999-03-17 富士通株式会社 強磁性トンネル接合磁気センサ、その製造方法、磁気ヘッド、および磁気記録／再生装置
US5838608A (en) * 1997-06-16 1998-11-17 Motorola, Inc. Multi-layer magnetic random access memory and method for fabricating thereof
JP3103916B2 (ja) * 1997-07-09 2000-10-30 ソニー株式会社 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル
US6211559B1 (en) * 1998-02-27 2001-04-03 Motorola, Inc. Symmetric magnetic tunnel device
US6083764A (en) * 1998-07-20 2000-07-04 Motorola, Inc. Method of fabricating an MTJ with low areal resistance
US5940319A (en) * 1998-08-31 1999-08-17 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6292389B1 (en) * 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US6233172B1 (en) * 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof
US6281538B1 (en) * 2000-03-22 2001-08-28 Motorola, Inc. Multi-layer tunneling device with a graded stoichiometry insulating layer
US6331944B1 (en) * 2000-04-13 2001-12-18 International Business Machines Corporation Magnetic random access memory using a series tunnel element select mechanism

Also Published As

Publication number Publication date
JP2002208683A (ja) 2002-07-26
TW512337B (en) 2002-12-01
EP1207538A1 (de) 2002-05-22
HK1046775A1 (zh) 2003-01-24
EP1207538B1 (de) 2004-07-21
DE60104385T2 (de) 2005-07-21
US6429497B1 (en) 2002-08-06
CN1354519A (zh) 2002-06-19
KR20020038919A (ko) 2002-05-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KUHNEN & WACKER PATENT- UND RECHTSANWALTSBUERO, 85

8327 Change in the person/name/address of the patent owner

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR