DE69726832D1 - Datenlesevorrichtung und -verfahren für Mehrbitspeicherzelle - Google Patents

Datenlesevorrichtung und -verfahren für Mehrbitspeicherzelle

Info

Publication number
DE69726832D1
DE69726832D1 DE69726832T DE69726832T DE69726832D1 DE 69726832 D1 DE69726832 D1 DE 69726832D1 DE 69726832 T DE69726832 T DE 69726832T DE 69726832 T DE69726832 T DE 69726832T DE 69726832 D1 DE69726832 D1 DE 69726832D1
Authority
DE
Germany
Prior art keywords
memory cell
reading device
data reading
bit memory
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69726832T
Other languages
English (en)
Other versions
DE69726832T2 (de
Inventor
Woong Lim Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
LG Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of DE69726832D1 publication Critical patent/DE69726832D1/de
Application granted granted Critical
Publication of DE69726832T2 publication Critical patent/DE69726832T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5644—Multilevel memory comprising counting devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
DE69726832T 1996-12-30 1997-06-10 Datenlesevorrichtung und -verfahren für Mehrbitspeicherzelle Expired - Lifetime DE69726832T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019960076873A KR100226746B1 (ko) 1996-12-30 1996-12-30 다중비트셀의데이타센싱장치및방법
KR9676873 1996-12-30

Publications (2)

Publication Number Publication Date
DE69726832D1 true DE69726832D1 (de) 2004-01-29
DE69726832T2 DE69726832T2 (de) 2004-11-04

Family

ID=19492355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726832T Expired - Lifetime DE69726832T2 (de) 1996-12-30 1997-06-10 Datenlesevorrichtung und -verfahren für Mehrbitspeicherzelle

Country Status (6)

Country Link
US (1) US5943259A (de)
EP (1) EP0851429B1 (de)
JP (1) JP3722401B2 (de)
KR (1) KR100226746B1 (de)
CN (1) CN1124608C (de)
DE (1) DE69726832T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US6038166A (en) * 1998-04-01 2000-03-14 Invox Technology High resolution multi-bit-per-cell memory
US6137739A (en) * 1998-06-29 2000-10-24 Hyundai Electronics Industries Co., Ltd. Multilevel sensing circuit and method thereof
KR100542397B1 (ko) * 2000-12-29 2006-01-10 주식회사 하이닉스반도체 반도체 메모리 소자의 센싱 회로
US6531887B2 (en) 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6545504B2 (en) * 2001-06-01 2003-04-08 Macronix International Co., Ltd. Four state programmable interconnect device for bus line and I/O pad
US6577161B2 (en) 2001-06-01 2003-06-10 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell with unidirectional and bidirectional states
US20050102573A1 (en) * 2003-11-03 2005-05-12 Macronix International Co., Ltd. In-circuit configuration architecture for embedded configurable logic array
US20050097499A1 (en) * 2003-11-03 2005-05-05 Macronix International Co., Ltd. In-circuit configuration architecture with non-volatile configuration store for embedded configurable logic array
JP2010140554A (ja) * 2008-12-11 2010-06-24 Samsung Electronics Co Ltd 不揮発性半導体記憶装置の読出し方法
KR101056258B1 (ko) 2009-09-14 2011-08-11 삼성모바일디스플레이주식회사 유기전계발광 표시장치 및 그의 구동방법
KR101925159B1 (ko) * 2010-08-06 2018-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8427877B2 (en) * 2011-02-11 2013-04-23 Freescale Semiconductor, Inc. Digital method to obtain the I-V curves of NVM bitcells
US9715924B2 (en) * 2015-10-22 2017-07-25 Sandisk Technologies Llc Three dimensional non-volatile memory with current sensing programming status
CN112820225B (zh) * 2019-11-15 2023-01-24 京东方科技集团股份有限公司 一种数据缓存电路、显示面板及显示装置
TWI712040B (zh) * 2020-05-12 2020-12-01 力旺電子股份有限公司 具多階型記憶胞陣列之非揮發性記憶體及其相關讀取控制方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
US5268318A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
FR2635410B1 (fr) * 1988-08-11 1991-08-02 Sgs Thomson Microelectronics Memoire de type eprom a haute densite d'integration avec une organisation en damier et un facteur de couplage ameliore et procede de fabrication
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5257220A (en) * 1992-03-13 1993-10-26 Research Foundation Of The State Univ. Of N.Y. Digital data memory unit and memory unit array
US5422842A (en) * 1993-07-08 1995-06-06 Sundisk Corporation Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells
JP3179943B2 (ja) * 1993-07-12 2001-06-25 株式会社東芝 半導体記憶装置
CN1147866C (zh) * 1994-06-02 2004-04-28 英特尔公司 含多级单元的快擦存储器的读出电路
US5508958A (en) * 1994-09-29 1996-04-16 Intel Corporation Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage
US5687114A (en) * 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell

Also Published As

Publication number Publication date
CN1124608C (zh) 2003-10-15
JPH10199269A (ja) 1998-07-31
DE69726832T2 (de) 2004-11-04
KR19980057576A (ko) 1998-09-25
US5943259A (en) 1999-08-24
KR100226746B1 (ko) 1999-10-15
EP0851429A2 (de) 1998-07-01
CN1187010A (zh) 1998-07-08
EP0851429A3 (de) 1999-03-31
EP0851429B1 (de) 2003-12-17
JP3722401B2 (ja) 2005-11-30

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