DE69627152D1 - Leseschaltung für Halbleiter-Speicherzellen - Google Patents

Leseschaltung für Halbleiter-Speicherzellen

Info

Publication number
DE69627152D1
DE69627152D1 DE69627152T DE69627152T DE69627152D1 DE 69627152 D1 DE69627152 D1 DE 69627152D1 DE 69627152 T DE69627152 T DE 69627152T DE 69627152 T DE69627152 T DE 69627152T DE 69627152 D1 DE69627152 D1 DE 69627152D1
Authority
DE
Germany
Prior art keywords
memory cells
semiconductor memory
reading circuit
reading
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69627152T
Other languages
English (en)
Other versions
DE69627152T2 (de
Inventor
Cristiano Calligaro
Paolo Rolandi
Roberto Gastaldi
Guido Torelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69627152D1 publication Critical patent/DE69627152D1/de
Publication of DE69627152T2 publication Critical patent/DE69627152T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
DE69627152T 1996-09-30 1996-09-30 Leseschaltung für Halbleiter-Speicherzellen Expired - Fee Related DE69627152T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96830494A EP0833340B1 (de) 1996-09-30 1996-09-30 Leseschaltung für Halbleiter-Speicherzellen

Publications (2)

Publication Number Publication Date
DE69627152D1 true DE69627152D1 (de) 2003-05-08
DE69627152T2 DE69627152T2 (de) 2004-03-04

Family

ID=8226017

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69627152T Expired - Fee Related DE69627152T2 (de) 1996-09-30 1996-09-30 Leseschaltung für Halbleiter-Speicherzellen

Country Status (4)

Country Link
US (2) US5883837A (de)
EP (1) EP0833340B1 (de)
JP (1) JPH10112197A (de)
DE (1) DE69627152T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5931898A (en) * 1997-02-25 1999-08-03 Lucent Technologies Inc Finite impulse response filter
KR100283029B1 (ko) * 1997-12-29 2001-03-02 윤종용 반도체 메모리 장치의 워드 라인 전압 발생 회로
EP0936627B1 (de) * 1998-02-13 2004-10-20 STMicroelectronics S.r.l. Abfühlverstärker für nichtflüchtigen Speicher mit niedriger Spannung
US6282145B1 (en) 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
DE29912015U1 (de) * 1999-07-09 1999-09-16 Chang Chien Kuo Arbeitstisch
FR2801419B1 (fr) 1999-11-18 2003-07-25 St Microelectronics Sa Procede et dispositif de lecture pour memoire en circuit integre
DE60129786T2 (de) 2001-01-15 2008-04-30 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und Schaltung zum dynamischen Auslesen einer Speicherzelle, insbesondere einer nichtflüchtigen Multibitspeicherzelle
US6724658B2 (en) 2001-01-15 2004-04-20 Stmicroelectronics S.R.L. Method and circuit for generating reference voltages for reading a multilevel memory cell
EP1251523B1 (de) 2001-04-19 2007-08-15 STMicroelectronics S.r.l. Verfahren und Schaltung zur Zeitsteuerung des dynamischen Auslesens einer Speicherzelle mit Kontrolle der Integrationszeit
US7042783B2 (en) * 2003-06-18 2006-05-09 Hewlett-Packard Development Company, L.P. Magnetic memory
US7324374B2 (en) * 2003-06-20 2008-01-29 Spansion Llc Memory with a core-based virtual ground and dynamic reference sensing scheme
US7345512B2 (en) * 2004-05-04 2008-03-18 Silicon Storage Technology, Inc. Sense amplifier for low voltage high speed sensing
US7158431B2 (en) 2005-03-28 2007-01-02 Silicon Storage Technology, Inc. Single transistor sensing and double transistor sensing for flash memory
TWI402847B (zh) * 2007-06-25 2013-07-21 Higgs Opl Capital Llc 相變化記憶體之感測電路
TWI347607B (en) 2007-11-08 2011-08-21 Ind Tech Res Inst Writing system and method for a phase change memory
TWI402845B (zh) 2008-12-30 2013-07-21 Higgs Opl Capital Llc 相變化記憶體陣列之驗證電路及方法
TWI412124B (zh) 2008-12-31 2013-10-11 Higgs Opl Capital Llc 相變化記憶體
US9567825B2 (en) 2015-04-28 2017-02-14 Thru Tubing Solutions, Inc. Flow control in subterranean wells
CN112863584A (zh) * 2019-11-28 2021-05-28 长鑫存储技术有限公司 一次可编程存储器的读写电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
EP0491105B1 (de) * 1990-12-13 1996-05-01 STMicroelectronics S.r.l. Verbesserte Abfühlschaltung für Speicheranordnungen, wie nichtflüchtige Speicher, mit verbesserter Abfühlunterscheidung
EP0678871B1 (de) * 1994-03-22 2000-05-31 STMicroelectronics S.r.l. Anordnung zum Lesen einer Speicherzellenmatrix
EP0700049A1 (de) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Leseschaltung für Speicherzellen
DE69526336D1 (de) * 1995-04-28 2002-05-16 St Microelectronics Srl Leseschaltung für Speicherzellen mit niedriger Versorgungsspannung
US5748534A (en) * 1996-03-26 1998-05-05 Invox Technology Feedback loop for reading threshold voltage
US5787042A (en) * 1997-03-18 1998-07-28 Micron Technology, Inc. Method and apparatus for reading out a programmable resistor memory

Also Published As

Publication number Publication date
DE69627152T2 (de) 2004-03-04
US5973966A (en) 1999-10-26
US5883837A (en) 1999-03-16
EP0833340B1 (de) 2003-04-02
EP0833340A1 (de) 1998-04-01
JPH10112197A (ja) 1998-04-28

Similar Documents

Publication Publication Date Title
DE69627152D1 (de) Leseschaltung für Halbleiter-Speicherzellen
DE69524572T2 (de) Leseverstärkerschaltung für Halbleiterspeicheranordnungen
DE69915153D1 (de) Spannungserhöhungsschaltung für Speicheranordnung
DE69924916D1 (de) Speicherschaltung
DE69525421D1 (de) Integrierte Speicherschaltungsanordnung
DE69731810D1 (de) Halbleiter-Festwertspeicher
DE69822280D1 (de) Halbleiterspeicher
DE59804824D1 (de) Speicherzellenanordnung
DE69811181D1 (de) Leseverfahren für ferroelektrischen 1T/1C-Speicher
DE69425367D1 (de) Leseschaltkreis für Speichermatrixzelle
DE69921737D1 (de) Magnetische Speicherzelle
DE69614032D1 (de) Stromdetektorschaltung zum Lesen einer integrierten Speicherschaltung
DE69916915D1 (de) Schreib-Schaltkreis für eine Halbleiter-Speichereinrichtung
DE69706947T2 (de) Halbleiterspeicher
DE69834540D1 (de) Halbleiterspeicher
DE69930586D1 (de) Integrierte Halbleiterspeicherschaltung
DE69832348D1 (de) Speicherschaltung
DE69909280D1 (de) Halbleiterspeicher
DE59913423D1 (de) Speicherzellenanordnung
DE69524200T2 (de) Leseverstärker für nicht-flüchtigen halbleiterspeicher
DE69928514D1 (de) Lesungsschaltung für einen Halbleiterspeicher
DE69715521D1 (de) Erste Lesezyklusschaltung für Halbleiterspeicher
DE69730306D1 (de) Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher
DE69823982D1 (de) Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen
DE69600633D1 (de) Eingangsschaltung für Halbleiterspeicher

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee