TWI347607B - Writing system and method for a phase change memory - Google Patents

Writing system and method for a phase change memory

Info

Publication number
TWI347607B
TWI347607B TW096142224A TW96142224A TWI347607B TW I347607 B TWI347607 B TW I347607B TW 096142224 A TW096142224 A TW 096142224A TW 96142224 A TW96142224 A TW 96142224A TW I347607 B TWI347607 B TW I347607B
Authority
TW
Taiwan
Prior art keywords
phase change
change memory
writing system
writing
memory
Prior art date
Application number
TW096142224A
Other languages
Chinese (zh)
Other versions
TW200921682A (en
Inventor
Shyh Shyuan Sheu
Lieh Chiu Lin
Pei Chia Chiang
Wen Pin Lin
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW096142224A priority Critical patent/TWI347607B/en
Priority to US12/165,761 priority patent/US7773410B2/en
Publication of TW200921682A publication Critical patent/TW200921682A/en
Application granted granted Critical
Publication of TWI347607B publication Critical patent/TWI347607B/en
Priority to US13/571,798 priority patent/USRE45189E1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW096142224A 2007-11-08 2007-11-08 Writing system and method for a phase change memory TWI347607B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW096142224A TWI347607B (en) 2007-11-08 2007-11-08 Writing system and method for a phase change memory
US12/165,761 US7773410B2 (en) 2007-11-08 2008-07-01 Writing system and method for phase change memory
US13/571,798 USRE45189E1 (en) 2007-11-08 2012-08-10 Writing system and method for phase change memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096142224A TWI347607B (en) 2007-11-08 2007-11-08 Writing system and method for a phase change memory

Publications (2)

Publication Number Publication Date
TW200921682A TW200921682A (en) 2009-05-16
TWI347607B true TWI347607B (en) 2011-08-21

Family

ID=40623563

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096142224A TWI347607B (en) 2007-11-08 2007-11-08 Writing system and method for a phase change memory

Country Status (2)

Country Link
US (2) US7773410B2 (en)
TW (1) TWI347607B (en)

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TWI402845B (en) 2008-12-30 2013-07-21 Higgs Opl Capital Llc Verification circuits and methods for phase change memory
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CN105023606B (en) * 2015-08-14 2018-06-26 中国科学院上海微系统与信息技术研究所 A kind of phase transition storage and its method for restoring data
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Also Published As

Publication number Publication date
US20090122599A1 (en) 2009-05-14
US7773410B2 (en) 2010-08-10
USRE45189E1 (en) 2014-10-14
TW200921682A (en) 2009-05-16

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