CN101266834B - Writing drive method and system for phase change memory - Google Patents
Writing drive method and system for phase change memory Download PDFInfo
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- CN101266834B CN101266834B CN2007100863701A CN200710086370A CN101266834B CN 101266834 B CN101266834 B CN 101266834B CN 2007100863701 A CN2007100863701 A CN 2007100863701A CN 200710086370 A CN200710086370 A CN 200710086370A CN 101266834 B CN101266834 B CN 101266834B
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- phase transition
- transition storage
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- memory block
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Abstract
The invention provides a driving method of phase changes memory write, comprising: counting an access times of a phase changes memory; and processing a data refreshing operation for the phase changes memory when the access times is more than a predetermined times.
Description
Technical field
The present invention is a kind of driving method and system of phase transition storage, driving method and system that particularly a kind of phase transition storage writes.
Background technology
Growth along with the portable applications product; Make the demand of nonvolatile memory that the trend that day by day increases arranged; Phase transition storage (Phase Change Memory; PCM) owing to have competitive characteristics such as speed, power, capacity, fiduciary level, manufacturing integrated level and cost, be regarded as the non-volatile memory technologies of next from generation to generation potentialization.The PCM storer mainly is to utilize some material under the particular current pulse, can have quick and reversible phase change effect; And then cause the stable change of material on some characteristic to reach the effect of storage; Its final state can't change along with the disappearance of external energy in addition, therefore has non-volatile characteristics.The phase-transition material that adopts at present is many to be main with the chalcogen compound alloy, with Ge
2Sb
2Te
5Alloy is the most general, and this kind material also has ripe application in can repeating to write recording type compact disc (CD-RW) and the industry that can repeat to write record formula digital multi-purpose CD (DVD-RW).
Phase transition storage mainly is to utilize some material under specific voltage or current impulse, can have quick and reversible phase change effect; And then cause the change of material at electrical property; Its final state can't change along with the disappearance of external energy in addition, therefore has non-volatile characteristics.When these materials are operated in the setting that makes the material crystallization (SET); Possibly cause phase transition storage when crystallization, to have paracrystalline phenomenon; Cause the resistance value of material to be lowered effectively, and then cause less detection margin (sensing margin) and relatively poor homogeneity to distribute.Present most solution is the time of elongate material crystallization, or before setting (SET) operation, gives short pulse heavy current earlier.Yet these methods meeting deterioration phase transition storages are in the characteristic of power and speed etc.
Along with the development of phase transition storage technology, the size of phase change memory cell (PCM cell) has the trend of micro gradually.Behind the size micro, WV reduces, and the lead in the phase change memory cell also attenuates, and the electric current that lead can bear reduces, and is unfavorable for charging and discharging fast the TV university electric current.And because phase-transition material is a current drives; Circuit provides replacement (RESET) operation to make the required big electric current of material amorphized quite painstaking; If phase transition storage is set (SET) preceding short pulse heavy current that also needs at every turn, certainly will be complicated more for the consideration of circuit design and layout.
Summary of the invention
The object of the invention is the driving method that provides a kind of phase transition storage to write.
Another object of the present invention is the drive system that provides a kind of phase transition storage to write.
The driving method that the present invention provides a kind of phase transition storage to write comprises the access times of counting a phase transition storage and when this access times during greater than a pre-determined number, this phase transition storage is carried out Refresh Data (REFRESH) operation.After this phase transition storage starts this Refresh Data operation, these access times are reset to 0.In this method embodiment, the Refresh Data operation comprises data to a shelf storage that duplicates and store in this phase transition storage; This phase transition storage is imported a reset current; Data in this phase transition storage are stored back this phase transition storage from this shelf storage.
The driving method that the present invention more provides a phase transition storage to write is applicable to a phase transition storage, and this phase transition storage has a plurality of memory block, comprises selecting a memory block; Write down access times of this memory block; When this access times during, this memory block of mark, and this memory block is carried out Refresh Data operation in a particular point in time greater than a predetermined value.After this phase transition storage starts this Refresh Data operation, these access times are reset to 0.In this method embodiment, the Refresh Data operation comprises data to a shelf storage that duplicates and store in this phase transition storage; This phase transition storage is imported a reset current; Data in this phase transition storage are stored back this phase transition storage from this shelf storage.
The drive system that the present invention provides a kind of phase transition storage to write comprises a phase transition storage, a shelf storage, a Memory Controller and a counter.This counter is in order to count access times of this phase transition storage.When this access times during greater than a pre-determined number, this Memory Controller carries out Refresh Data operation to this phase transition storage, comprising: duplicate and store data in this phase transition storage to this shelf storage; This phase transition storage is imported a reset current; Data in this phase transition storage are stored back this phase transition storage from this shelf storage.
For letting above and other objects of the present invention, characteristic and the advantage can be more obviously understandable, the hereinafter spy enumerates preferred embodiment, and conjunction with figs., elaborates as follows:
Description of drawings
The current impulse synoptic diagram of Fig. 1 for generally phase transition storage being write and reads.
The process flow diagram of one embodiment of the driving method that Fig. 2 writes for a kind of phase transition storage according to the present invention.
Fig. 3 is the process flow diagram according to an embodiment of a kind of Refresh Data operation of the present invention.
The synoptic diagram of one embodiment of the drive system that Fig. 4 writes for a kind of phase transition storage of the present invention.
The primary clustering symbol description
I
RESET-reset current
I
SET-setting electric current
I
READ-read electric current
The 41-phase transition storage
The 42-shelf storage
The 43-counter
The 44-Memory Controller
Embodiment
The operation of phase transition storage mainly is to be applied on the phase transition storage through two kinds of different big or small current impulses; Make phase transition storage because the effect of Ohmic heating; Cause regional area causes phase-transition material because of different temperature changes amorphous state (amorphous state) with crystalline state (crystalline state) but anti-phase change, and reach the purpose of storing data through the different resistance values that this two phase is appeared.The current impulse synoptic diagram of Fig. 1 for generally phase transition storage being write and reads.When phase transition storage carries out the RESET operation, mainly be to apply the short and higher reset current I of pulse height of a pulse width
RESET, make the temperature of phase transition storage regional area can be higher than the fusing point (T of phase-transition material through applying of this pulse
m) and melt.When the zone of this thawing during in instantaneous temperature reduction, carry out crystallization again owing to have insufficient time to, therefore in the process of solidifying, can form amorphous state, this moment, phase-transition material had high value.On the other hand, when phase transition storage carries out the SET operation, then be to utilize a pulse width broad and the lower setting electric current I of pulse height
SET, make the temperature of phase transition storage regional area between the Tc (T of phase-transition material through applying of this pulse
x) and fusing point between, so then can be again by crystallization through the amorphized zone after the RESET operation.As stated; The RESET of phase transition storage operation is erasing in the similar flash memory (erase) and record (program) operation with the SET operation, at last through phase transition storage being operated in the effect that resistance difference between crystalline state and the amorphous state reaches storage.When the data in the reading phase change memories, then utilize a size of current less than I
SETRead electric current I
READJudge its resistance value, to learn the data of its storage.
The process flow diagram of one embodiment of the driving method that Fig. 2 writes for a kind of phase transition storage according to the present invention.When phase transition storage receives an access instruction (step S21), count the number of times (step S22) that this phase transition storage receives access instruction through a counter.In the present embodiment, this counter possibly realized by software or hardware, also maybe in be built in the Memory Controller or be external counter.In the present embodiment, phase transition storage can be divided into a plurality of memory block, and each memory block all couples a counter, in order to count the access times of each memory block.In the present embodiment, access times have comprised replacement (RESET) number of times, setting (SET) number of times or a reading times of this phase transition storage.The driving method that present embodiment provided can be controlled to single replacement number of times, set point number or reading times, or replacement number of times, set point number or the reading times of taking all factors into consideration phase transition storage are controlled.When counter was accomplished the counting of access times of phase transition storage, whether the access times that can judge phase transition storage were greater than a predetermined value (step S23).If not, then jump to step S24, normal access should change storer.If, then jump to step S25, this phase transition storage of mark, and in a special time this phase transition storage that is labeled is carried out a Refresh Data (REFRESH) and operate.Utilize above-mentioned driving method can avoid phase transition storage to write (over-writing) because of being reset continuously or having set excessively.In the present embodiment, when being the memory block counting that is directed against in this phase transition storage, then only need carry out Refresh Data, and the operation of mark phase transition storage also becomes this need Refresh Data memory block of mark to this memory block as if this counter.In the present embodiment, can before this phase transition storage of access, carry out the operation of Refresh Data, or judge this phase transition storage when system and carry out the operation of Refresh Data when being idle again.In addition, in the time of can being activated (activated) at this phase transition storage, or when using the device of this phase transition storage to start, just first this phase transition storage is carried out the operation of Refresh Data.
Fig. 3 is the process flow diagram according to an embodiment of a kind of Refresh Data operation of the present invention.Present embodiment is the Refresh Data operation of avoiding the phase transition storage excessive crystallizationization, that is operates to the Refresh Data that the number of times of this phase transition storage reception SET operation is done.Those of ordinary skill is when the Refresh Data operating process that can avoid the excessive amorphized of phase transition storage easily according to the Flow Chart Design of present embodiment.In the present embodiment, count SET the number (step S31) of this phase transition storage through a counter, when counter was accomplished the counting of SET number of phase transition storage, whether SET number can judging phase transition storage be greater than a predetermined value (step S23).If not, then jump to step S33, this phase transition storage is not carried out the operation of Refresh Data.If, then jump to step S34, the data in this phase transition storage are temporary to a shelf storage.In the present embodiment, this shelf storage possibly be an external memory storage, or is the one or more specific memory blocks in this phase transition storage.In step S35, phase transition storage is done the RESET operation, that is import the short and higher reset current of pulse height of a pulse width, make phase transition storage be in amorphous state (amorphous state).Then, in step S36, phase transition storage is done the SET operation, that is import a pulse width broad and the lower setting electric current of pulse height, make phase transition storage be in crystalline state (crystalline state).Then, in step S37, the data in this phase transition storage that originally was stored in the shelf storage are deposited back this phase transition storage.In the present embodiment, step S36 can be omitted, that is needn't just can the data in this phase transition storage that originally was stored in the shelf storage be deposited back this phase transition storage to phase transition storage SET operation.
The synoptic diagram of one embodiment of the drive system that Fig. 4 writes for a kind of phase transition storage of the present invention.Phase transition storage 41 has a plurality of memory block, and wherein each memory block all couples a counting unit corresponding in the counter 43.44 count results according to counter 43 of Memory Controller judge whether and will carry out the operation of Refresh Data to phase transition storage 41.When counter 43 judges that the access times of phase transition storage 41 surpass a predetermined value, to see a control signal off and give Memory Controller 44,44 of Memory Controllers carry out Refresh Data according to this control signal to phase transition storage 41 to be operated.Memory Controller 44 is at first temporary to a shelf storage 42 with the data in this phase transition storage 41.In the present embodiment, this shelf storage 42 possibly be an external memory storage, like dynamic ram (DRAM) or SRAM (SRAM), or is the one or more specific memory blocks in this phase transition storage.Then, 44 pairs of phase transition storages of Memory Controller 41 carry out the operation of Refresh Data.The operation of Refresh Data comprises following 3 steps:
Step 1: 44 pairs of phase transition storages 41 of Memory Controller are done RESET, SET or (RESET+SET) operation, and phase transition storage is between amorphous state (amorphous state) and the crystalline state (crystalline state).
Step 2: Memory Controller 44 is done SET or RESET operation to phase transition storage 41 again.The operation of 44 pairs of phase transition storages 41 of Memory Controller this moment should be different with the operation of step 1; That is Memory Controller 44 is avoided the excessive crystallizationization or the excessive amorphized of phase transition storage 41 through continuously phase transition storage 41 being carried out the operation of SET and RESET.
Step 3: the data that Memory Controller 44 will originally be stored in this phase transition storage 41 in the shelf storage 42 are deposited back this phase transition storage 41, accomplish the operation of Refresh Data.
In sum, though the present invention with preferred embodiment openly as above, so it is not in order to limit the present invention.Those of ordinary skill under any in the technical field under the situation that does not break away from the spirit and scope of the present invention, can carry out various changes and modification.Therefore, protection scope of the present invention is as the criterion with the scope of the claim that proposed.
Claims (20)
1. the driving method of a phase transition storage comprises:
One access times of counting phase transition storage, wherein, these access times comprise a replacement number of times, a set point number or a reading times of this phase transition storage;
Confirm that whether these access times are greater than a pre-determined number; And
If these access times greater than this pre-determined number, then carry out Refresh Data to this phase transition storage and operate, wherein the Refresh Data operation comprises that carrying out replacement operates, and carries out setting operation then, with excessive crystallizationization or the excessive amorphized of avoiding phase transition storage.
2. the driving method of phase transition storage as claimed in claim 1, wherein this replacement operation system imports a reset current to this phase transition storage.
3. the driving method of phase transition storage as claimed in claim 1, wherein this setting operation system sets electric current to this phase transition storage input one.
4. the driving method of phase transition storage as claimed in claim 1, wherein before this phase transition storage being carried out this replacement operation, earlier with the data storage of storing in this phase transition storage in a shelf storage.
5. the driving method of phase transition storage as claimed in claim 1 wherein after this phase transition storage receives this Refresh Data operation, resets to 0 with these access times.
6. the driving method of phase transition storage as claimed in claim 1, wherein this Refresh Data operation comprises:
Duplicate and store data to a shelf storage in this phase transition storage;
This phase transition storage is imported a reset current; And
Data in this phase transition storage are stored back this phase transition storage from this shelf storage.
7. the driving method of phase transition storage as claimed in claim 6 wherein also comprises:
Electric current is set in this phase transition storage input one.
8. the driving method of a phase transition storage is applicable to a phase transition storage, and this phase transition storage has a plurality of memory block, comprising:
Select the memory block in this phase transition storage;
Write down access times of this memory block, these access times comprise a replacement number of times, a set point number or a reading times of this memory block; And
When this access times during greater than a predetermined value; This memory block of mark; And in a particular point in time this memory block is carried out a Refresh Data and operate; Wherein the Refresh Data operation comprises that carrying out replacement operates, and carries out setting operation then, with excessive crystallizationization or the excessive amorphized of avoiding phase transition storage.
9. the driving method of phase transition storage as claimed in claim 8, wherein before this memory block being carried out this replacement operation, earlier with the data storage of storing in this memory block in another memory block.
10. the driving method of phase transition storage as claimed in claim 8 wherein after this memory block receives this Refresh Data operation, resets to 0 with these access times.
11. the driving method of phase transition storage as claimed in claim 8 also comprises:
Duplicate and store data to the slack storage block in this memory block;
This memory block is imported a reset current; And
Data in this memory block are stored back this memory block from this slack storage block.
12. the driving method of phase transition storage as claimed in claim 11 wherein also comprises:
Electric current is set in this phase transition storage input one.
13. the driving method of phase transition storage as claimed in claim 8, wherein this particular point in time is judged as when idle by a control system for this memory block.
14. the driving method of phase transition storage as claimed in claim 8, wherein this particular point in time is for before this memory block is written into data.
15. the driving method of phase transition storage as claimed in claim 8 is when wherein this particular point in time starts from dormancy or off-mode for this memory block.
16. the drive system of a phase transition storage comprises:
One phase transition storage;
One shelf storage;
One Memory Controller; And
One counter, in order to count access times of this phase transition storage, wherein, these access times comprise a replacement number of times, a set point number or a reading times of this phase transition storage;
When this access times during greater than a pre-determined number, this Memory Controller carries out Refresh Data operation to this phase transition storage, comprising:
Duplicate and store data in this phase transition storage to this shelf storage;
This phase transition storage is imported a reset current, with excessive crystallizationization or the excessive amorphized of avoiding phase transition storage; And
Data in this phase transition storage are stored back this phase transition storage from this shelf storage.
17. the drive system of phase transition storage as claimed in claim 16, wherein this phase transition storage has a plurality of memory block.
18. the drive system of phase transition storage as claimed in claim 17, wherein this shelf storage comprises this memory block.
19. the drive system of phase transition storage as claimed in claim 16, wherein when this phase transition storage was activated, this Memory Controller carried out this Refresh Data operation to this phase transition storage.
20. the drive system of phase transition storage as claimed in claim 16 wherein after this phase transition storage receives this Refresh Data operation, resets to 0 with these access times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2007100863701A CN101266834B (en) | 2007-03-15 | 2007-03-15 | Writing drive method and system for phase change memory |
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|---|---|---|---|
| CN2007100863701A CN101266834B (en) | 2007-03-15 | 2007-03-15 | Writing drive method and system for phase change memory |
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| CN101266834B true CN101266834B (en) | 2012-07-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI347607B (en) | 2007-11-08 | 2011-08-21 | Ind Tech Res Inst | Writing system and method for a phase change memory |
| TWI402845B (en) | 2008-12-30 | 2013-07-21 | Higgs Opl Capital Llc | Verification circuits and methods for phase change memory |
| TWI412124B (en) | 2008-12-31 | 2013-10-11 | Higgs Opl Capital Llc | Phase change memory |
| US7894254B2 (en) * | 2009-07-15 | 2011-02-22 | Macronix International Co., Ltd. | Refresh circuitry for phase change memory |
| CN102376362B (en) * | 2010-08-24 | 2017-08-11 | 晨星软件研发(深圳)有限公司 | Method and related controller applied to flash memory |
| CN102768571A (en) * | 2012-06-13 | 2012-11-07 | 上海交通大学 | Energy saving method of PCM-based (phase change memory based) data center |
| CN104318956B (en) * | 2014-09-30 | 2018-05-15 | 西安紫光国芯半导体有限公司 | A kind of resistive random access memory storage array programmed method and device |
| CN104733047B (en) | 2015-03-30 | 2018-05-08 | 西安紫光国芯半导体有限公司 | A kind of RRAM submatrix array structures including reference unit |
| US9858997B2 (en) * | 2015-07-14 | 2018-01-02 | Nanya Technology Corp. | Electronic apparatus applying unified non-volatile memory and unified non-volatile memory controlling method |
| CN105810242A (en) * | 2016-03-02 | 2016-07-27 | 中国科学院上海微系统与信息技术研究所 | Phase change memory and operation method for improving fatigue life of same |
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| CN1811985A (en) * | 2005-01-19 | 2006-08-02 | 尔必达存储器株式会社 | Memory device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1811985A (en) * | 2005-01-19 | 2006-08-02 | 尔必达存储器株式会社 | Memory device |
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