DE69916915D1 - Schreib-Schaltkreis für eine Halbleiter-Speichereinrichtung - Google Patents

Schreib-Schaltkreis für eine Halbleiter-Speichereinrichtung

Info

Publication number
DE69916915D1
DE69916915D1 DE69916915T DE69916915T DE69916915D1 DE 69916915 D1 DE69916915 D1 DE 69916915D1 DE 69916915 T DE69916915 T DE 69916915T DE 69916915 T DE69916915 T DE 69916915T DE 69916915 D1 DE69916915 D1 DE 69916915D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
write circuit
write
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69916915T
Other languages
English (en)
Other versions
DE69916915T2 (de
Inventor
Kazuhiro Hasegawa
Akira Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE69916915D1 publication Critical patent/DE69916915D1/de
Publication of DE69916915T2 publication Critical patent/DE69916915T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
DE69916915T 1998-02-19 1999-01-22 Schreib-Schaltkreis für eine Halbleiter-Speichereinrichtung Expired - Fee Related DE69916915T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP3734898 1998-02-19
JP3734898 1998-02-19
JP4758798 1998-02-27
JP4758898 1998-02-27
JP4758898 1998-02-27
JP4758798 1998-02-27
JP23906298A JPH11312393A (ja) 1998-02-19 1998-08-25 半導体メモリ装置の書き込み回路
JP23906298 1998-08-25

Publications (2)

Publication Number Publication Date
DE69916915D1 true DE69916915D1 (de) 2004-06-09
DE69916915T2 DE69916915T2 (de) 2005-04-28

Family

ID=27460402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69916915T Expired - Fee Related DE69916915T2 (de) 1998-02-19 1999-01-22 Schreib-Schaltkreis für eine Halbleiter-Speichereinrichtung

Country Status (6)

Country Link
US (1) US6353559B2 (de)
EP (1) EP0938094B1 (de)
JP (1) JPH11312393A (de)
KR (1) KR100373465B1 (de)
DE (1) DE69916915T2 (de)
TW (1) TW548897B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809955B2 (en) 2001-05-07 2004-10-26 Advanced Micro Devices, Inc. Addressable and electrically reversible memory switch
WO2002091476A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
US6844608B2 (en) 2001-05-07 2005-01-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell
US6781868B2 (en) * 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
JP4886160B2 (ja) * 2001-05-07 2012-02-29 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド セルフアセンブリによるポリマーフィルムを用いた記憶装置およびその製造方法
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
EP1434232B1 (de) 2001-08-13 2007-09-19 Advanced Micro Devices, Inc. Speicherzelle
US6858481B2 (en) * 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
JP4168637B2 (ja) * 2002-02-13 2008-10-22 セイコーエプソン株式会社 不揮発性半導体記憶装置
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7848158B2 (en) * 2008-05-05 2010-12-07 Micron Technologies, Inc. Methods and apparatuses for programming flash memory using modulated pulses
US8816659B2 (en) 2010-08-06 2014-08-26 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
US9384152B2 (en) 2010-02-23 2016-07-05 Rambus Inc. Coordinating memory operations using memory-device generated reference signals
US9413362B2 (en) 2011-01-18 2016-08-09 Peregrine Semiconductor Corporation Differential charge pump
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9324383B2 (en) * 2014-03-20 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Source line voltage regulation scheme for leakage reduction
KR20220148518A (ko) * 2021-04-29 2022-11-07 에스케이하이닉스 주식회사 트랜지스터들의 성능을 모니터하는 모니터링 회로

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06152334A (ja) * 1992-11-06 1994-05-31 Mitsubishi Electric Corp リングオシレータおよび定電圧発生回路
KR960000837B1 (ko) * 1992-12-02 1996-01-13 삼성전자주식회사 반도체 메모리장치
JP2658916B2 (ja) * 1994-11-04 1997-09-30 日本電気株式会社 半導体装置の電源切り換え回路
US5615146A (en) * 1994-11-11 1997-03-25 Nkk Corporation Nonvolatile memory with write data latch
US5661686A (en) * 1994-11-11 1997-08-26 Nkk Corporation Nonvolatile semiconductor memory
JP2917914B2 (ja) * 1996-05-17 1999-07-12 日本電気株式会社 昇圧回路
US5991221A (en) * 1998-01-30 1999-11-23 Hitachi, Ltd. Microcomputer and microprocessor having flash memory operable from single external power supply

Also Published As

Publication number Publication date
DE69916915T2 (de) 2005-04-28
EP0938094A1 (de) 1999-08-25
KR19990072742A (ko) 1999-09-27
KR100373465B1 (ko) 2003-02-25
TW548897B (en) 2003-08-21
JPH11312393A (ja) 1999-11-09
EP0938094B1 (de) 2004-05-06
US20010014038A1 (en) 2001-08-16
US6353559B2 (en) 2002-03-05

Similar Documents

Publication Publication Date Title
DE69916915D1 (de) Schreib-Schaltkreis für eine Halbleiter-Speichereinrichtung
DE69630858D1 (de) Vorladungsschaltung für eine Halbleiterspeicheranordnung
DE69524572T2 (de) Leseverstärkerschaltung für Halbleiterspeicheranordnungen
DE9422048U1 (de) Wortleitungstreiberschaltkreis für eine Halbleiterspeichereinrichtung
DE69939799D1 (de) Eine Halbleiterspeichervorrichtung
DE69728715D1 (de) Treiberschaltung für eine Halbleitervorrichtung
DE69933584D1 (de) Speichervorrichtung für aufzeichnungsträger
DE69930586D1 (de) Integrierte Halbleiterspeicherschaltung
DE69934853D1 (de) Halbleiterspeicheranordnung
DE69617391T2 (de) Halbleiterspeicheranordnung
DE69909280D1 (de) Halbleiterspeicher
DE69627152D1 (de) Leseschaltung für Halbleiter-Speicherzellen
DE69731015D1 (de) Halbleiterspeicheranordnung
DE69823427D1 (de) Halbleiterspeicheranordnung
DE69928514D1 (de) Lesungsschaltung für einen Halbleiterspeicher
DE69902712D1 (de) Halbleiterspeicheranordnung
DE69531715D1 (de) Leseverstärker für Halbleiterspeicheranordnung
DE69412234T2 (de) Redundanzschaltung für eine Halbleiter-Speicheranordnung
DE69730306D1 (de) Dateneinschreibschaltung für nichtflüchtigen Halbleiterspeicher
DE69715521D1 (de) Erste Lesezyklusschaltung für Halbleiterspeicher
DE60033467D1 (de) Halbleiterspeicheranordnung
DE69721210D1 (de) Halbleiterspeicheranordnung
DE69934621D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60015006D1 (de) Verbindungsschema für Halbleiter-Speicherbauteil
DE69119803T2 (de) Schreibeschaltung für eine nichtflüchtige Speicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee