DE69930586D1 - Integrierte Halbleiterspeicherschaltung - Google Patents

Integrierte Halbleiterspeicherschaltung

Info

Publication number
DE69930586D1
DE69930586D1 DE69930586T DE69930586T DE69930586D1 DE 69930586 D1 DE69930586 D1 DE 69930586D1 DE 69930586 T DE69930586 T DE 69930586T DE 69930586 T DE69930586 T DE 69930586T DE 69930586 D1 DE69930586 D1 DE 69930586D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory circuit
integrated semiconductor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930586T
Other languages
English (en)
Other versions
DE69930586T2 (de
Inventor
Shinya Fujioka
Masao Taguchi
Yasuharu Sato
Takaaki Suzuki
Tadao Aikawa
Yasurou Matsuzaki
Toshiya Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69930586D1 publication Critical patent/DE69930586D1/de
Publication of DE69930586T2 publication Critical patent/DE69930586T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
DE69930586T 1998-06-30 1999-06-29 Integrierte Halbleiterspeicherschaltung Expired - Lifetime DE69930586T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18509798 1998-06-30
JP18509798 1998-06-30

Publications (2)

Publication Number Publication Date
DE69930586D1 true DE69930586D1 (de) 2006-05-18
DE69930586T2 DE69930586T2 (de) 2006-08-31

Family

ID=16164805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930586T Expired - Lifetime DE69930586T2 (de) 1998-06-30 1999-06-29 Integrierte Halbleiterspeicherschaltung

Country Status (5)

Country Link
US (1) US6185149B1 (de)
EP (1) EP0969476B1 (de)
KR (1) KR100567991B1 (de)
DE (1) DE69930586T2 (de)
TW (1) TW426857B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796673A (en) 1994-10-06 1998-08-18 Mosaid Technologies Incorporated Delay locked loop implementation in a synchronous dynamic random access memory
JP4162364B2 (ja) 2000-06-26 2008-10-08 富士通株式会社 半導体記憶装置
KR20020014563A (ko) * 2000-08-18 2002-02-25 윤종용 반도체 메모리 장치
US6757840B1 (en) * 2000-08-21 2004-06-29 Micron Technology, Inc. Device and method for configuring a cache tag in accordance with burst length
DE10110274B4 (de) * 2001-03-02 2006-06-29 Infineon Technologies Ag Integrierter Speicher mit mehreren Speicherzellenfeldern
US6515914B2 (en) 2001-03-21 2003-02-04 Micron Technology, Inc. Memory device and method having data path with multiple prefetch I/O configurations
US7177288B2 (en) * 2001-11-28 2007-02-13 Intel Corporation Simultaneous transmission and reception of signals in different frequency bands over a bus line
US6661721B2 (en) * 2001-12-13 2003-12-09 Infineon Technologies Ag Systems and methods for executing precharge commands using posted precharge in integrated circuit memory devices with memory banks each including local precharge control circuits
US6845424B2 (en) * 2002-01-31 2005-01-18 Intel Corporation Memory pass-band signaling
JP4511462B2 (ja) * 2003-06-30 2010-07-28 富士通セミコンダクター株式会社 半導体記憶装置
US7212464B2 (en) * 2004-09-17 2007-05-01 Seiko Epson Corporation Semiconductor memory device having a plurality of latch circuits coupled to each read amplifier
US7280428B2 (en) 2004-09-30 2007-10-09 Rambus Inc. Multi-column addressing mode memory system including an integrated circuit memory device
US8595459B2 (en) 2004-11-29 2013-11-26 Rambus Inc. Micro-threaded memory
US7660183B2 (en) * 2005-08-01 2010-02-09 Rambus Inc. Low power memory device
US20100110747A1 (en) * 2005-08-10 2010-05-06 Liquid Design Systems, Inc. Semiconductor memory device
US7613883B2 (en) * 2006-03-10 2009-11-03 Rambus Inc. Memory device with mode-selectable prefetch and clock-to-core timing
US20070260841A1 (en) 2006-05-02 2007-11-08 Hampel Craig E Memory module with reduced access granularity
KR100855267B1 (ko) * 2006-12-27 2008-09-01 주식회사 하이닉스반도체 반도체 메모리 장치
JP2008257776A (ja) * 2007-04-03 2008-10-23 Elpida Memory Inc 半導体記憶装置及びその制御方法
JP2009176343A (ja) * 2008-01-22 2009-08-06 Liquid Design Systems:Kk 半導体記憶装置
KR20120109841A (ko) * 2011-03-28 2012-10-09 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템
US9268719B2 (en) 2011-08-05 2016-02-23 Rambus Inc. Memory signal buffers and modules supporting variable access granularity
US9070433B1 (en) * 2014-03-11 2015-06-30 International Business Machines Corporation SRAM supply voltage global bitline precharge pulse

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960003526B1 (ko) 1992-10-02 1996-03-14 삼성전자주식회사 반도체 메모리장치
US5386385A (en) 1994-01-31 1995-01-31 Texas Instruments Inc. Method and apparatus for preventing invalid operating modes and an application to synchronous memory devices
US5668773A (en) * 1994-12-23 1997-09-16 Micron Technology, Inc. Synchronous burst extended data out DRAM
US5564347A (en) 1995-04-14 1996-10-15 Oklahoma Gas And Electric Company Ash clinker ramming apparatus
US5657287A (en) * 1995-05-31 1997-08-12 Micron Technology, Inc. Enhanced multiple block writes to adjacent blocks of memory using a sequential counter
JP3183321B2 (ja) * 1995-11-10 2001-07-09 日本電気株式会社 半導体記憶装置
JPH09161471A (ja) 1995-12-06 1997-06-20 Internatl Business Mach Corp <Ibm> Ｄｒａｍシステム、ｄｒａｍシステムの動作方法
US5808959A (en) * 1996-08-07 1998-09-15 Alliance Semiconductor Corporation Staggered pipeline access scheme for synchronous random access memory
US5784582A (en) * 1996-10-28 1998-07-21 3Com Corporation Data processing system having memory controller for supplying current request and next request for access to the shared memory pipeline
KR100265599B1 (ko) * 1997-12-31 2000-10-02 김영환 데이터 윈도우 제어장치 및 그 방법

Also Published As

Publication number Publication date
KR100567991B1 (ko) 2006-04-06
TW426857B (en) 2001-03-21
US6185149B1 (en) 2001-02-06
KR20000006561A (ko) 2000-01-25
DE69930586T2 (de) 2006-08-31
EP0969476B1 (de) 2006-03-29
EP0969476A1 (de) 2000-01-05

Similar Documents

Publication Publication Date Title
DE69943120D1 (de) Integrierte Halbleiterschaltung
DE69927658D1 (de) Integrierte Halbleiterschaltung
DE69824972D1 (de) Integrierter halbleiterschaltkreis
DE69828234D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69830962D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69830772D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69939717D1 (de) Speicherschaltung
DE69930586D1 (de) Integrierte Halbleiterspeicherschaltung
DE69820040D1 (de) Halbleiter-speicher-bauteile
DE69827863D1 (de) Integriertes Halbleiterschaltkreisbauelement
DE69938585D1 (de) Integrierte schaltungsanordnung
DE69822280D1 (de) Halbleiterspeicher
DE69406074D1 (de) Integrierte Halbleiterspeicherschaltung
DE60143643D1 (de) Integriertes halbleiterschaltungsbauelement
DE69936028D1 (de) Nichtflüchtiger Halbleiterspeicher
DE69837135D1 (de) Integrierte Halbleiterschaltungsanordnung
DE60135728D1 (de) Integrierte Halbleiterschaltung
DE69940029D1 (de) Halbleiterbauelement
DE69834540D1 (de) Halbleiterspeicher
DE60032644D1 (de) Halbleiter-speicherbaustein
DE60025067D1 (de) Cmos Halbleiter integrierte Schaltung
DE69909280D1 (de) Halbleiterspeicher
DE69830878D1 (de) Integrierte Halbleiterschaltungsanordnung
DE69920486D1 (de) Halbleiterschaltung
DE69907997D1 (de) Halbleiterspeicherschaltung mit Redundanz

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE